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Myungsoo Kim
Myungsoo Kim
UNIST | Ulsan National Institute of Science and Technology
Verified email at unist.ac.kr - Homepage
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Cited by
Cited by
Year
Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides
R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang, JC Lee, ...
Nano letters 18 (1), 434-441, 2018
4692018
High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping
DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ...
Advanced Functional Materials 25 (27), 4219-4227, 2015
3002015
Zero-static power radio-frequency switches based on MoS2 atomristors
M Kim, R Ge, X Wu, X Lan, J Tice, JC Lee, D Akinwande
Nature communications 9 (1), 2524, 2018
1672018
Imperceptible electrooculography graphene sensor system for human–robot interface
SK Ameri, M Kim, IA Kuang, WK Perera, M Alshiekh, H Jeong, U Topcu, ...
npj 2D Materials and Applications 2 (1), 19, 2018
1242018
Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems
M Kim, E Pallecchi, R Ge, X Wu, G Ducournau, JC Lee, H Happy, ...
Nature Electronics 3 (8), 479-485, 2020
1072020
Monolayer molybdenum disulfide switches for 6G communication systems
M Kim, G Ducournau, S Skrzypczak, SJ Yang, P Szriftgiser, N Wainstein, ...
Nature Electronics 5 (6), 367-373, 2022
352022
Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches
R Ge, X Wu, M Kim, PA Chen, J Shi, J Choi, X Li, Y Zhang, MH Chiang, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.6. 1-22.6. 4, 2018
222018
Non-volatile RF and mm-wave Switches Based on Monolayer hBN
M Kim, E Pallecchi, R Ge, X Wu, V Avramovic, E Okada, JC Lee, H Happy, ...
2019 IEEE International Electron Devices Meeting (IEDM), 9.5. 1-9.5. 4, 2019
172019
Reconfigurable Low-Voltage Hexagonal Boron Nitride Nonvolatile Switches for Millimeter-Wave Wireless Communications
SJ Yang, MM Dahan, O Levit, F Makal, P Peterson, J Alikpala, ...
Nano Letters 23 (4), 1152-1158, 2023
72023
Towards mm-wave nanoelectronics and RF switches using MoS22D Semiconductor
M Kim, S Park, A Sanne, SK Banerjee, D Akinwande
2018 IEEE/MTT-S International Microwave Symposium-IMS, 352-354, 2018
72018
Atomristors: Non-Volatile Resistance Switching in 2D Monolayers
X Wu, R Ge, M Kim, D Akinwande, JC Lee
2020 Pan Pacific Microelectronics Symposium (Pan Pacific), 1-6, 2020
52020
Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets
R Ge, X Wu, M Kim, H Chou, S Sonde, L Tao, JC Lee, D Akinwande
arXiv preprint arXiv:1709.04592, 2017
42017
Strain-Modulated Interlayer Charge and Energy Transfers in MoS2/WS2 Heterobilayer
JS Kim, N Maity, M Kim, S Fu, R Juneja, A Singh, D Akinwande, JF Lin
ACS Applied Materials & Interfaces 14 (41), 46841-46849, 2022
32022
Single-Pole-Double-Throw RF switches based on monolayer MoS2
M Kim, E Pallecchi, H Happy, D Akinwande
2021 Device Research Conference (DRC), 1-2, 2021
32021
Enhanced heat dissipation performance of chemical-doped graphene for flexible devices
YB Chung, D Kireev, M Kim, D Akinwande, SJ Kwon
Journal of the Korean Physical Society 78, 45-50, 2021
22021
Two-dimensional materials-based nonvolatile resistive memories and radio frequency switches
R Ge, X Wu, M Kim, JC Lee, D Akinwande
Emerging 2D Materials and Devices for the Internet of Things: Information …, 2020
22020
Emerging memory electronics for non-volatile radiofrequency switching technologies
D Kim, SJ Yang, N Wainstein, S Skrzypczak, G Ducournau, E Pallecchi, ...
Nature Reviews Electrical Engineering 1 (1), 10-23, 2024
12024
Volatile and Nonvolatile Resistive Switching Coexistence in Conductive Point Hexagonal Boron Nitride Monolayer
SJ Yang, L Liang, Y Lee, Y Gu, J Fatheema, S Kutagulla, D Kim, M Kim, ...
ACS nano 18 (4), 3313-3322, 2024
2024
Towards 500 GHz Non-volatile Monolayer 6G Switches
M Kim, G Docoumau, S Skrzypczak, P Szriftgiser, SJ Yang, N Wainstein, ...
2022 IEEE/MTT-S International Microwave Symposium-IMS 2022, 902-905, 2022
2022
Commutateur RF fabriqué à partir de matériau 2D
S Skrzypczak, M Kim, G Ducournau, D Vignaud, R Gassilloud, ...
2022
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