Follow
Byung Joon Choi
Title
Cited by
Cited by
Year
Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition
BJ Choi, DS Jeong, SK Kim, C Rohde, S Choi, JH Oh, HJ Kim, CS Hwang, ...
Journal of applied physics 98 (3), 2005
14502005
Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films
KM Kim, BJ Choi, YC Shin, S Choi, CS Hwang
Applied physics letters 91 (1), 2007
5002007
Identification of a determining parameter for resistive switching of TiO2 thin films
C Rohde, BJ Choi, DS Jeong, S Choi, JS Zhao, CS Hwang
Applied Physics Letters 86 (26), 2005
3992005
Memristors for Energy‐Efficient New Computing Paradigms
DS Jeong, KM Kim, S Kim, BJ Choi, CS Hwang
Advanced Electronic Materials 2 (9), 1600090, 2016
3422016
High‐speed and low‐energy nitride memristors
BJ Choi, AC Torrezan, JP Strachan, PG Kotula, AJ Lohn, MJ Marinella, ...
Advanced Functional Materials 26 (29), 5290-5296, 2016
3112016
Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films
KM Kim, BJ Choi, CS Hwang
Applied physics letters 90 (24), 2007
2702007
Engineering nonlinearity into memristors for passive crossbar applications
J Joshua Yang, MX Zhang, MD Pickett, F Miao, J Paul Strachan, WD Li, ...
Applied Physics Letters 100 (11), 2012
2492012
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
KM Kim, BJ Choi, MH Lee, GH Kim, SJ Song, JY Seok, JH Yoon, S Han, ...
Nanotechnology 22 (25), 254010, 2011
2192011
Electrical Performance and Scalability of Pt Dispersed SiO2 Nanometallic Resistance Switch
BJ Choi, AC Torrezan, KJ Norris, F Miao, JP Strachan, MX Zhang, ...
Nano letters 13 (7), 3213-3217, 2013
2172013
Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application
KM Kim, J Zhang, C Graves, JJ Yang, BJ Choi, CS Hwang, Z Li, ...
Nano Letters 16 (11), 6724-6732, 2016
2022016
Resistive Switching in Pt∕ Al2O3∕ TiO2∕ Ru Stacked Structures
KM Kim, BJ Choi, BW Koo, S Choi, DS Jeong, CS Hwang
Electrochemical and solid-state letters 9 (12), G343, 2006
1522006
Study on the resistive switching time of TiO2 thin films
BJ Choi, S Choi, KM Kim, YC Shin, CS Hwang, SY Hwang, S Cho, S Park, ...
Applied physics letters 89 (1), 2006
1522006
Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt‐Dispersed SiO2 Thin Films for ReRAM
BJ Choi, ABK Chen, X Yang, IW Chen
Advanced Materials 23 (33), 3847-3852, 2011
1262011
Trilayer tunnel selectors for memristor memory cells
BJ Choi, J Zhang, K Norris, G Gibson, KM Kim, W Jackson, MXM Zhang, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (2), 356, 2016
1222016
A physical model of switching dynamics in tantalum oxide memristive devices
PR Mickel, AJ Lohn, B Joon Choi, J Joshua Yang, MX Zhang, ...
Applied Physics Letters 102 (22), 2013
1002013
(In, Sn) 2O3∕ TiO2∕ Pt Schottky-type diode switch for the TiO2 resistive switching memory array
YC Shin, J Song, KM Kim, BJ Choi, S Choi, HJ Lee, GH Kim, T Eom, ...
Applied Physics Letters 92 (16), 2008
1002008
Cyclic PECVD of Ge2Sb2Te5 films using metallorganic sources
BJ Choi, S Choi, YC Shin, CS Hwang, JW Lee, J Jeong, YJ Kim, ...
Journal of the electrochemical society 154 (4), H318, 2007
992007
Nitride memristors
BJ Choi, JJ Yang, MX Zhang, KJ Norris, DAA Ohlberg, NP Kobayashi, ...
Applied Physics A 109 (1), 1-4, 2012
86*2012
Influence of carrier injection on resistive switching of TiO2 thin films with Pt electrodes
KM Kim, BJ Choi, DS Jeong, CS Hwang, S Han
Applied physics letters 89 (16), 2006
862006
Leaky integrate-and-fire neuron circuit based on floating-gate integrator
V Kornijcuk, H Lim, JY Seok, G Kim, SK Kim, I Kim, BJ Choi, DS Jeong
Frontiers in neuroscience 10, 212, 2016
762016
The system can't perform the operation now. Try again later.
Articles 1–20