| Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition JR Bakke, KL Pickrahn, TP Brennan, SF Bent Nanoscale 3 (9), 3482-3508, 2011 | 207 | 2011 |
| Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells P Ardalan, TP Brennan, HBR Lee, JR Bakke, IK Ding, MD McGehee, ... ACS nano 5 (2), 1495-1504, 2011 | 125 | 2011 |
| Atomic layer deposition of ZnS via in situ production of H2S JR Bakke, JS King, HJ Jung, R Sinclair, SF Bent Thin solid films 518 (19), 5400-5408, 2010 | 93 | 2010 |
| Atomic Layer Deposition of CdS Quantum Dots for Solid‐State Quantum Dot Sensitized Solar Cells TP Brennan, P Ardalan, HBR Lee, JR Bakke, IK Ding, MD McGehee, ... Advanced Energy Materials 1 (6), 1169-1175, 2011 | 89 | 2011 |
| Electron enrichment in 3d transition metal oxide hetero-nanostructures CX Kronawitter, JR Bakke, DA Wheeler, WC Wang, C Chang, BR Antoun, ... Nano letters 11 (9), 3855-3861, 2011 | 87 | 2011 |
| Atomic layer deposition of CdS films JR Bakke, HJ Jung, JT Tanskanen, R Sinclair, SF Bent Chemistry of Materials 22 (16), 4669-4678, 2010 | 80 | 2010 |
| Cobalt fill for advanced interconnects N Bekiaris, Z Wu, H Ren, M Naik, JH Park, M Lee, TH Ha, W Hou, ... 2017 IEEE international interconnect technology conference (IITC), 1-3, 2017 | 70 | 2017 |
| Growth characteristics, material properties, and optical properties of zinc oxysulfide films deposited by atomic layer deposition JR Bakke, JT Tanskanen, C Hägglund, TA Pakkanen, SF Bent Journal of Vacuum Science & Technology A 30 (1), 2012 | 61 | 2012 |
| TiO 2-SnO 2: F interfacial electronic structure investigated by soft x-ray absorption spectroscopy CX Kronawitter, M Kapilashrami, JR Bakke, SF Bent, CH Chuang, ... Physical Review B 85 (12), 125109, 2012 | 57 | 2012 |
| Influence of organozinc ligand design on growth and material properties of ZnS and ZnO deposited by atomic layer deposition JT Tanskanen, JR Bakke, TA Pakkanen, SF Bent Journal of Vacuum Science & Technology A 29 (3), 2011 | 55 | 2011 |
| ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors JT Tanskanen, JR Bakke, SF Bent, TA Pakkanen Langmuir 26 (14), 11899-11906, 2010 | 50 | 2010 |
| The importance of dye chemistry and TiCl 4 surface treatment in the behavior of Al 2 O 3 recombination barrier layers deposited by atomic layer deposition in solid-state dye … TP Brennan, JR Bakke, IK Ding, BE Hardin, WH Nguyen, R Mondal, ... Physical Chemistry Chemical Physics 14 (35), 12130-12140, 2012 | 40 | 2012 |
| TiO2 Conduction Band Modulation with In2O3 Recombination Barrier Layers in Solid-State Dye-Sensitized Solar Cells TP Brennan, JT Tanskanen, KE Roelofs, JWF To, WH Nguyen, JR Bakke, ... The Journal of Physical Chemistry C 117 (46), 24138-24149, 2013 | 39 | 2013 |
| Atomic layer deposition of Cd x Zn 1− x S films JR Bakke, JT Tanskanen, HJ Jung, R Sinclair, SF Bent Journal of Materials Chemistry 21 (3), 743-751, 2011 | 30 | 2011 |
| Atomic layer deposition of CdO and CdxZn1− xO films JR Bakke, C Hägglund, HJ Jung, R Sinclair, SF Bent Materials Chemistry and Physics 140 (2-3), 465-471, 2013 | 20 | 2013 |
| Dynamical Orientation of Large Molecules on Oxide Surfaces and its Implications for Dye-Sensitized Solar Cells TP Brennan, JT Tanskanen, JR Bakke, WH Nguyen, D Nordlund, ... Chemistry of Materials 25 (21), 4354-4363, 2013 | 18 | 2013 |
| Molecular level insights into atomic layer deposition of CdS by quantum chemical calculations JT Tanskanen, JR Bakke, SF Bent, TA Pakkanen The Journal of Physical Chemistry C 114 (39), 16618-16624, 2010 | 17 | 2010 |
| Fluorine-free tungsten films as low resistance liners for tungsten fill applications J Bakke, Y Lei, Y Xu, K Daito, X Fu, G Jian, K Wu, R Hung, R Jakkaraju, ... 2016 IEEE International Interconnect Technology Conference/Advanced …, 2016 | 16 | 2016 |
| Process for in situ generation of hydrogen sulfide or hydrogen selenide gas using a solid precursor S Bent, JS King, JR Bakke US Patent App. 12/641,664, 2010 | 15 | 2010 |
| Methods for forming low-resistance contacts through integrated process flow systems Y Lei, V Banthia, K Wu, X Fu, Y Xu, K Daito, F Ma, P Agarwal, CC Lin, ... US Patent 9,947,578, 2018 | 14 | 2018 |
Stacey BentProfessor of Chemical Engineering, Stanford UniversityVerified email at stanford.edu
