| Organic–inorganic hybrid halide perovskites for memories, transistors, and artificial synapses J Choi, JS Han, K Hong, SY Kim, HW Jang Advanced materials 30 (42), 1704002, 2018 | 251 | 2018 |
| Air‐stable cesium lead iodide perovskite for ultra‐low operating voltage resistive switching JS Han, QV Le, J Choi, K Hong, CW Moon, TL Kim, H Kim, SY Kim, ... Advanced Functional Materials 28 (5), 1705783, 2018 | 206 | 2018 |
| Recent advances in memristive materials for artificial synapses SG Kim, JS Han, H Kim, SY Kim, HW Jang Advanced materials technologies 3 (12), 1800457, 2018 | 196 | 2018 |
| Enhanced endurance organolead halide perovskite resistive switching memories operable under an extremely low bending radius J Choi, QV Le, K Hong, CW Moon, JS Han, KC Kwon, PR Cha, Y Kwon, ... ACS applied materials & interfaces 9 (36), 30764-30771, 2017 | 151 | 2017 |
| Lead-free all-inorganic cesium tin iodide perovskite for filamentary and interface-type resistive switching toward environment-friendly and temperature-tolerant nonvolatile … JS Han, QV Le, J Choi, H Kim, SG Kim, K Hong, CW Moon, TL Kim, ... ACS applied materials & interfaces 11 (8), 8155-8163, 2019 | 146 | 2019 |
| Wafer-scale reliable switching memory based on 2-dimensional layered organic–inorganic halide perovskite JY Seo, J Choi, HS Kim, J Kim, JM Yang, C Cuhadar, JS Han, SJ Kim, ... Nanoscale 9 (40), 15278-15285, 2017 | 122 | 2017 |
| Halide perovskites for applications beyond photovoltaics H Kim, JS Han, J Choi, SY Kim, HW Jang Small Methods 2 (3), 1700310, 2018 | 113 | 2018 |
| Halide perovskites for resistive random-access memories H Kim, JS Han, SG Kim, SY Kim, HW Jang Journal of Materials Chemistry C 7 (18), 5226-5234, 2019 | 97 | 2019 |
| Dual‐phase all‐inorganic cesium halide perovskites for conducting‐bridge memory‐based artificial synapses SG Kim, Q Van Le, JS Han, H Kim, MJ Choi, SA Lee, TL Kim, SB Kim, ... Advanced Functional Materials 29 (49), 1906686, 2019 | 87 | 2019 |
| Quasi-2D halide perovskites for resistive switching devices with ON/OFF ratios above 109 H Kim, MJ Choi, JM Suh, JS Han, SG Kim, QV Le, SY Kim, HW Jang NPG Asia Materials 12 (1), 21, 2020 | 79 | 2020 |
| Vertically aligned two-dimensional halide perovskites for reliably operable artificial synapses SJ Kim, TH Lee, JM Yang, JW Yang, YJ Lee, MJ Choi, SA Lee, JM Suh, ... Materials Today 52, 19-30, 2022 | 47 | 2022 |
| Conducting Bridge Resistive Switching Behaviors in Cubic MAPbI3, Orthorhombic RbPbI3, and Their Mixtures SM Lee, J Choi, JB Jeon, BJ Kim, JS Han, TL Kim, HS Jung, HW Jang Advanced Electronic Materials 5 (2), 1800586, 2019 | 39 | 2019 |
| Lead‐free dual‐phase halide perovskites for preconditioned conducting‐bridge memory JS Han, QV Le, H Kim, YJ Lee, DE Lee, IH Im, MK Lee, SJ Kim, J Kim, ... Small 16 (41), 2003225, 2020 | 33 | 2020 |
| Strong Fermi-level pinning at metal contacts to halide perovskites K Hong, KC Kwon, KS Choi, Q Van Le, SJ Kim, JS Han, JM Suh, SY Kim, ... Journal of Materials Chemistry C 9 (42), 15212-15220, 2021 | 14 | 2021 |
| High Hole Mobility Inorganic Halide Perovskite Field‐Effect Transistors with Enhanced Phase Stability and Interfacial Defect Tolerance YJ Lee, JS Han, DE Lee, TH Lee, JY Kim, JM Suh, JH Lee, IH Im, SJ Kim, ... Advanced Electronic Materials 8 (1), 2100624, 2022 | 6 | 2022 |
