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Ogyun Seok
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High-Voltage and Low-Leakage-Current Gate Recessed Normally-Off GaN MIS-HEMTs With Dual Gate Insulator Employing PEALD-/RF-Sputtered-
W Choi, O Seok, H Ryu, HY Cha, KS Seo
IEEE Electron Device Letters 35 (2), 175-177, 2013
1182013
High on/off current ratio AlGaN/GaN MOS-HEMTs employing RF-sputtered HfO2 gate insulators
O Seok, W Ahn, MK Han, MW Ha
Semiconductor science and technology 28 (2), 025001, 2012
492012
High‐breakdown voltage and low on‐resistance AlGaN/GaN on Si MOS‐HEMTs employing an extended TaN gate on HfO2 gate insulator
O Seok, W Ahn, MK Han, MW Ha
Electronics letters 49 (6), 425-427, 2013
192013
High-voltage Schottky barrier diode on silicon substrate
MW Ha, CH Roh, DW Hwang, HG Choi, HJ Song, JH Lee, JH Park, ...
Japanese journal of applied physics 50 (6S), 06GF17, 2011
192011
High voltage AlGaN/GaN high-electron-mobility transistors employing surface treatment by deposition and removal of silicon dioxide layer
YH Choi, SJ Kim, YS Kim, MK Kim, O Seok, MK Han
Japanese Journal of applied physics 49 (4S), 04DF06, 2010
182010
High-voltage AlGaN/GaN Schottky barrier diodes on silicon using a post-process O2 treatment
O Seok, MK Han, YC Byun, J Kim, HC Shin, MW Ha
Solid-State Electronics 103, 49-53, 2015
152015
AlGaN/GaN MOS-HEMTs-on-Si employing sputtered TaN-based electrodes and HfO2 gate insulator
O Seok, MW Ha
Solid-State Electronics 105, 1-5, 2015
142015
High breakdown voltage AlGaN/GaN HEMTs employing recessed gate edge structure
M Kim, YH Choi, J Lim, YS Kim, O Seok, MK Han
Proc. international conference on compound semiconductor manufacturing …, 2010
142010
Effect of Ga2O3 sputtering power on breakdown voltage of AlGaN/GaN high-electron-mobility transistors
O Seok, W Ahn, MK Han, MW Ha
Journal of Vacuum Science & Technology B, Nanotechnology and …, 2013
122013
Fabrication of 4H-SiC lateral double implanted MOSFET on an on-axis semi-insulating substrate without using epi-layer
HW Kim, O Seok, JH Moon, W Bahng, J Jo
Japanese Journal of Applied Physics 56 (12), 120305, 2017
82017
High-voltage lateral double-implanted MOSFETs implemented on high-purity semi-insulating 4H-SiC substrates with gate field plates
O Seok, HW Kim, JH Moon, HS Lee, W Bahng
Japanese Journal of Applied Physics 57 (6S1), 06HC08, 2018
72018
Electrical Characteristics of SiO2/4H-SiC Metal-oxide-semiconductor Capacitors with Low-temperature Atomic Layer Deposited SiO2
YJ Jo, JH Moon, O Seok, W Bahng, TJ Park, MW Ha
JSTS: Journal of Semiconductor Technology and Science 17 (2), 265-270, 2017
72017
High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealing
W Ahn, O Seok, SM Song, MK Han, MW Ha
Journal of crystal growth 378, 600-603, 2013
72013
Normally-off AlGaN/GaN MOS-HEMTs by KOH wet etch and rf-sputtered HfO2 gate insulator
W Ahn, O Seok, MW Ha, YS Kim, MK Han
2013 25th International Symposium on Power Semiconductor Devices & IC's …, 2013
72013
TEOS-based low-pressure chemical vapor deposition for gate oxides in 4H–SiC MOSFETs using nitric oxide post-deposition annealing
JH Moon, IH Kang, HW Kim, O Seok, W Bahng, MW Ha
Current Applied Physics 20 (12), 1386-1390, 2020
62020
Effects of trench profile and self-aligned ion implantation on electrical characteristics of 1.2 kV 4H-SiC trench MOSFETs using bottom protection p-well
O Seok, MW Ha, IH Kang, HW Kim, DY Kim, W Bahng
Japanese Journal of Applied Physics 57 (6S1), 06HC07, 2018
62018
Various Schottky Contacts of AlGaN/GaN Schottky Barrier Diodes (SBDs)
W Ahn, O Seok, MW Ha, YS Kim, MK Han
ECS Transactions 53 (2), 171, 2013
62013
High voltage AlGaN/GaN high-electron-mobility transistors (HEMTs) employing oxygen annealing
YH Choi, J Lim, YS Kim, O Seok, MK Kim, MK Han
2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010
62010
Effect of sweeping direction on the capacitance− voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing
S Lee, S Kim, HJ Kang, HW Kim, O Seok, JH Moon, W Bahng, HJ Kim, ...
Physica Scripta 94 (12), 125811, 2019
52019
High-Voltage AlGaN/GaN High-Electron-Mobility Transistors Using Thermal Oxidation for NiOx Passivation
M Kim, O Seok, MK Han, MW Ha
Journal of Electrical Engineering and Technology 8 (5), 1157-1162, 2013
52013
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