| Fermi level pinning at electrical metal contacts of monolayer molybdenum dichalcogenides C Kim, I Moon, D Lee, MS Choi, F Ahmed, S Nam, Y Cho, HJ Shin, S Park, ... ACS nano 11 (2), 1588-1596, 2017 | 732 | 2017 |
| Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for advanced transistors SS Cheema, N Shanker, LC Wang, CH Hsu, SL Hsu, YH Liao, ... Nature 604 (7904), 65-71, 2022 | 133 | 2022 |
| Breakdown of the interlayer coherence in twisted bilayer graphene Y Kim, H Yun, SG Nam, M Son, DS Lee, DC Kim, S Seo, HC Choi, HJ Lee, ... Physical Review Letters 110 (9), 096602, 2013 | 100 | 2013 |
| Thermoelectric transport of massive Dirac fermions in bilayer graphene SG Nam, DK Ki, HJ Lee Physical Review B 82 (24), 245416, 2010 | 92 | 2010 |
| Unexpectedly low barrier of ferroelectric switching in HfO2 via topological domain walls DH Choe, S Kim, T Moon, S Jo, H Bae, SG Nam, YS Lee, J Heo Materials Today 50, 8-15, 2021 | 50 | 2021 |
| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 48 | 2023 |
| Two-dimensional materials inserted at the metal/semiconductor interface: Attractive candidates for semiconductor device contacts MH Lee, Y Cho, KE Byun, KW Shin, SG Nam, C Kim, H Kim, SA Han, ... Nano letters 18 (8), 4878-4884, 2018 | 41 | 2018 |
| Reconfigurable van der Waals heterostructured devices with metal–insulator transition J Heo, H Jeong, Y Cho, J Lee, K Lee, S Nam, EK Lee, S Lee, H Lee, ... Nano Letters 16 (11), 6746-6754, 2016 | 40 | 2016 |
| Ballistic transport of graphene pnp junctions with embedded local gates SG Nam, DK Ki, JW Park, Y Kim, JS Kim, HJ Lee Nanotechnology 22 (41), 415203, 2011 | 40 | 2011 |
| Potential role of motion for enhancing maximum output energy of triboelectric nanogenerator KE Byun, MH Lee, Y Cho, SG Nam, HJ Shin, S Park APL Materials 5 (7), 2017 | 31 | 2017 |
| Sub-ns polarization switching in 25nm FE FinFET toward post CPU and spatial-energetic mapping of traps for enhanced endurance H Bae, SG Nam, T Moon, Y Lee, S Jo, DH Choe, S Kim, KH Lee, J Heo 2020 IEEE International Electron Devices Meeting (IEDM), 31.3. 1-31.3. 4, 2020 | 29 | 2020 |
| Dependence of quantum-Hall conductance on the edge-state equilibration position in a bipolar graphene sheet DK Ki, SG Nam, HJ Lee, B Oezyilmaz Physical Review B 81 (3), 033301, 2010 | 29 | 2010 |
| Thermoelectric detection of chiral heat transport in graphene in the quantum Hall regime SG Nam, EH Hwang, HJ Lee Physical Review Letters 110 (22), 226801, 2013 | 26 | 2013 |
| Negative differential capacitance in ultrathin ferroelectric hafnia S Jo, H Lee, DH Choe, JH Kim, YS Lee, O Kwon, S Nam, Y Park, K Kim, ... Nature Electronics 6 (5), 390-397, 2023 | 12 | 2023 |
| Ferroelectric diodes with sub-ns and sub-fJ switching and its programmable network for logic-in-memory applications H Bae, T Moon, SG Nam, KH Lee, S Kim, S Hong, DH Choe, S Jo, Y Lee, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 12 | 2021 |
| Barrier height control in metal/silicon contacts with atomically thin MoS2 and WS2 interfacial layers SG Nam, Y Cho, MH Lee, KW Shin, C Kim, K Yang, M Jeong, HJ Shin, ... 2D Materials 5 (4), 041004, 2018 | 10 | 2018 |
| Study of selective graphene growth on non-catalytic hetero-substrates KW Shin, Y Cho, Y Lee, H Lee, SG Nam, KE Byun, CS Lee, S Park, ... 2D Materials 7 (1), 011002, 2019 | 8 | 2019 |
| Non-volatile content addressable memory device having simple cell configuration and operating method of the same NAM Seunggeol, HEO Jinseong, M Taehwan, BAE Hagyoul US Patent App. 17/540,675, 2022 | 6 | 2022 |
| Thin film structure and semiconductor device including the same HEO Jinseong, M Taehwan, NAM Seunggeol, JO Sanghyun US Patent 11,804,536, 2023 | 5 | 2023 |
| Graphene capping of Cu back-end-of-line interconnects reduces resistance and improves electromigration lifetime KW Shin, Y Cho, SG Nam, A Jung, EK Lee, CS Lee, MH Lee, HJ Shin, ... ACS Applied Nano Materials 6 (6), 4170-4177, 2023 | 4 | 2023 |
