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Jaeyong Jeong
Jaeyong Jeong
Samsung Electronics
Verified email at davinci.snu.ac.kr - Homepage
Title
Cited by
Cited by
Year
Method for operating non-volatile memory device and memory controller
J Jeong, MH Choi, P Kitae
US Patent 9,117,536, 2015
2692015
Method of programming non-volatile semiconductor memory device
JY Jeong, JS Yeom, SS Lee
US Patent 6,614,688, 2003
1312003
Circuit and method for adaptive incremental step-pulse programming in a flash memory device
SH Kim, JY Jeong
US Patent 7,349,263, 2008
1072008
Lifetime improvement of {NAND} flash-based storage systems using dynamic program and erase scaling
J Jeong, SS Hahn, S Lee, J Kim
12th USENIX Conference on File and Storage Technologies (FAST 14), 61-74, 2014
1022014
A 21 nm high performance 64 Gb MLC NAND flash memory with 400 MB/s asynchronous toggle DDR interface
C Kim, J Ryu, T Lee, H Kim, J Lim, J Jeong, S Seo, H Jeon, B Kim, I Lee, ...
IEEE Journal of Solid-State Circuits 47 (4), 981-989, 2012
802012
Flash memory device capable of minimizing a substrate voltage bouncing and a program method thereof
JY Jeong
US Patent 6,353,555, 2002
642002
Memory device, memory system, and method of controlling read voltage of the memory device
MH Choi, JY Jeong, K Park
US Patent 9,685,206, 2017
592017
Memory system, data storage device, memory card, and ssd including wear level control logic
S Yoon, C Lee, K Kyung, J Jeong
US Patent App. 13/604,780, 2013
572013
Non-volatile semiconductor memory device capable of preventing program disturb due to noise voltage induced at a string select line and program method thereof
JY Jeong, SS Lee
US Patent 6,717,861, 2004
512004
Nonvolatile semiconductor memory with a programming operation and the method thereof
JY Jeong, SS Lee
US Patent 6,650,566, 2003
512003
An integrated approach for managing read disturbs in high-density NAND flash memory
K Ha, J Jeong, J Kim
IEEE Transactions on Computer-Aided Design of Integrated Circuits and …, 2015
492015
A new 3-bit programming algorithm using SLC-to-TLC migration for 8MB/s high performance TLC NAND flash memory
SH Shin, DK Shim, JY Jeong, OS Kwon, SY Yoon, MH Choi, TY Kim, ...
2012 Symposium on VLSI Circuits (VLSIC), 132-133, 2012
492012
Nonvolatile memory device, method for programming same, and memory system incorporating same
IM Kim, JY Jeong
US Patent App. 12/828,480, 2011
402011
Nonvolatile semiconductor memory device with a fail bit detecting scheme and method for counting the number of fail bits
JY Jeong, SS Lee
US Patent 7,024,598, 2006
372006
Memory systems including nonvolatile memory devices and dynamic access methods thereof
S Moon, KH Kim, J Kim, J Jeong
US Patent 9,646,705, 2017
362017
A read-disturb management technique for high-density NAND flash memory
K Ha, J Jeong, J Kim
Proceedings of the 4th Asia-Pacific Workshop on Systems, 1-6, 2013
332013
Method and apparatus for programming multi level cell flash memory device
JP Kong, JY Jeong
US Patent 7,643,340, 2010
302010
Flash memory devices and programming methods that vary programming conditions in response to a selected step increment
IM Kim, JY Jeong, CW Yoon
US Patent 7,787,305, 2010
282010
NOR flash memory device and method of shortening a program time
JY Jeong, HS Lim
US Patent 7,072,214, 2006
282006
Improving performance and lifetime of NAND storage systems using relaxed program sequence
J Park, J Jeong, S Lee, Y Song, J Kim
Proceedings of the 53rd Annual Design Automation Conference, 1-6, 2016
272016
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