| Graphene‐based flexible and stretchable electronics H Jang, YJ Park, X Chen, T Das, MS Kim, JH Ahn Advanced Materials 28 (22), 4184-4202, 2016 | 661 | 2016 |
| MoS2‐Based Tactile Sensor for Electronic Skin Applications M Park, YJ Park, X Chen, YK Park, MS Kim, JH Ahn Advanced Materials 28 (13), 2556-2562, 2016 | 427 | 2016 |
| CVD-grown monolayer MoS2 in bioabsorbable electronics and biosensors X Chen, YJ Park, M Kang, SK Kang, J Koo, SM Shinde, J Shin, S Jeon, ... Nature communications 9 (1), 1690, 2018 | 333 | 2018 |
| Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ... Science 362 (6415), 665-670, 2018 | 265 | 2018 |
| Flexible active-matrix organic light-emitting diode display enabled by MoS2 thin-film transistor M Choi, YJ Park, BK Sharma, SR Bae, SY Kim, JH Ahn Science advances 4 (4), eaas8721, 2018 | 201 | 2018 |
| All MoS2-Based Large Area, Skin-Attachable Active-Matrix Tactile Sensor YJ Park, BK Sharma, SM Shinde, MS Kim, B Jang, JH Kim, JH Ahn ACS nano 13 (3), 3023-3030, 2019 | 184 | 2019 |
| Self-limiting layer synthesis of transition metal dichalcogenides Y Kim, JG Song, YJ Park, GH Ryu, SJ Lee, JS Kim, PJ Jeon, CW Lee, ... Scientific reports 6 (1), 18754, 2016 | 101 | 2016 |
| Graphene-based conformal devices YJ Park, SK Lee, MS Kim, H Kim, JH Ahn ACS nano 8 (8), 7655-7662, 2014 | 98 | 2014 |
| Lithography-free plasma-induced patterned growth of MoS 2 and its heterojunction with graphene X Chen, YJ Park, T Das, H Jang, JB Lee, JH Ahn Nanoscale 8 (33), 15181-15188, 2016 | 81 | 2016 |
| A composite layer of atomic-layer-deposited Al2O3 and graphene for flexible moisture barrier T Nam, YJ Park, H Lee, IK Oh, JH Ahn, SM Cho, H Kim Carbon 116, 553-561, 2017 | 57 | 2017 |
| Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits YJ Park, AK Katiyar, AT Hoang, JH Ahn Small 15 (28), 1901772, 2019 | 48 | 2019 |
| Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions B Shao, TH Choy, F Zhou, J Chen, C Wang, YJ Park, JH Ahn, Y Chai Nano Research 14, 1784-1788, 2021 | 24 | 2021 |
| Flexible graphene based microwave attenuators K Byun, YJ Park, JH Ahn, BW Min Nanotechnology 26 (5), 055201, 2015 | 13 | 2015 |
| Tactile Sensors: MoS2‐Based Tactile Sensor for Electronic Skin Applications (Adv. Mater. 13/2016) M Park, YJ Park, X Chen, YK Park, MS Kim, JH Ahn Advanced Materials 28 (13), 2555-2555, 2016 | 5 | 2016 |
| MoTe2 CMOS Inverters: Controllable P‐ and N‐Type Conversion of MoTe2 via Oxide Interfacial Layer for Logic Circuits (Small 28/2019) YJ Park, AK Katiyar, AT Hoang, JH Ahn Small 15 (28), 1970147, 2019 | 1 | 2019 |
| Transient sensor using molybdenum disulfide and method of manufacturing the same JH Ahn, X Chen, YJ Park, MP Kang US Patent App. 18/368,084, 2023 | | 2023 |
| Transient sensor using molybdenum disulfide and method of manufacturing the same JH Ahn, X Chen, YJ Park, MP Kang US Patent 11,781,217, 2023 | | 2023 |
| Active matrix organic light-emitting diode display device and method of manufacturing the same JH Ahn, SY Kim, MW Choi, YJ Park, BK Sharma, SR Bae US Patent 11,233,107, 2022 | | 2022 |
| Flexible Active-Matrix Organic-Light Emitting Diode Display Enabled by High Performance MoS2 Transistors for Wearable Electronics M Choi, YJ Park, BK Sharma, SR Bae, SY Kim, JH Ahn | | |
