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Dominique Mangelinck
Dominique Mangelinck
IM2NP-CNRS-AMU
im2np.fr의 이메일 확인됨 - 홈페이지
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Graded microstructure and mechanical properties of additive manufactured Ti–6Al–4V via electron beam melting
X Tan, Y Kok, YJ Tan, M Descoins, D Mangelinck, SB Tor, KF Leong, ...
Acta Materialia 97, 1-16, 2015
5262015
Enhancement of thermal stability of NiSi films on (100) Si and (111) Si by Pt addition
D Mangelinck, JY Dai, JS Pan, SK Lahiri
Applied physics letters 75 (12), 1736-1738, 1999
3241999
Revealing martensitic transformation and α/β interface evolution in electron beam melting three-dimensional-printed Ti-6Al-4V
X Tan, Y Kok, WQ Toh, YJ Tan, M Descoins, D Mangelinck, SB Tor, ...
Scientific reports 6 (1), 1-10, 2016
1752016
Impact of directional walk on atom probe microanalysis
B Gault, F Danoix, K Hoummada, D Mangelinck, H Leitner
Ultramicroscopy 113, 182-191, 2012
1432012
New salicidation technology with Ni (Pt) alloy for MOSFETs
PS Lee, KL Pey, D Mangelinck, J Ding, DZ Chi, L Chan
IEEE Electron Device Letters 22 (12), 568-570, 2001
1252001
Morphological and phase stability of nickel–germanosilicide on under thermal stress
T Jarmar, J Seger, F Ericson, D Mangelinck, U Smith, SL Zhang
Journal of applied physics 92 (12), 7193-7199, 2002
1092002
Effect of Co, Pt, and Au additions on the stability and epitaxy of films on (111)Si
D Mangelinck, P Gas, JM Gay, B Pichaud, O Thomas
Journal of applied physics 84 (5), 2583-2590, 1998
971998
Increased nucleation temperature of in the reaction of Ni thin films with
J Seger, SL Zhang, D Mangelinck, HH Radamson
Applied physics letters 81 (11), 1978-1980, 2002
862002
Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate
F Nemouchi, D Mangelinck, C Bergman, P Gas, U Smith
Applied Physics Letters 86 (4), 041903, 2005
842005
Micro‐Raman Spectroscopy Investigation of Nickel Silicides and Nickel (Platinum) Silicides
PS Lee, D Mangelinck, KL Pey, ZX Shen, J Ding, T Osipowicz, A See
Electrochemical and Solid-State Letters 3 (3), 153, 2000
822000
Simultaneous growth of and NiGe by reaction of Ni film with Ge
F Nemouchi, D Mangelinck, C Bergman, G Clugnet, P Gas, JL Lábár
Applied Physics Letters 89 (13), 131920, 2006
662006
Revealing hot tearing mechanism for an additively manufactured high-entropy alloy via selective laser melting
Z Sun, XP Tan, M Descoins, D Mangelinck, SB Tor, CS Lim
Scripta Materialia 168, 129-133, 2019
642019
Three-dimensional composition mapping of NiSi phase distribution and Pt diffusion via grain boundaries in Ni2Si
D Mangelinck, K Hoummada, A Portavoce, C Perrin, R Daineche, ...
Scripta Materialia 62 (8), 568-571, 2010
582010
Snowplow effect and reactive diffusion in the Pt doped Ni–Si system
O Cojocaru-Mirédin, D Mangelinck, K Hoummada, E Cadel, D Blavette, ...
Scripta materialia 57 (5), 373-376, 2007
582007
Carbide precipitation characteristics in additive manufacturing of Co-Cr-Mo alloy via selective electron beam melting
XP Tan, P Wang, Y Kok, WQ Toh, Z Sun, SML Nai, M Descoins, ...
Scripta Materialia 143, 117-121, 2018
572018
A comparative study of nickel silicides and nickel germanides: Phase formation and kinetics
F Nemouchi, D Mangelinck, JL Lábár, M Putero, C Bergman, P Gas
Microelectronic Engineering 83 (11-12), 2101-2106, 2006
572006
Effect of Pt addition on Ni silicide formation at low temperature: Growth, redistribution, and solubility
K Hoummada, C Perrin-Pellegrino, D Mangelinck
Journal of Applied Physics 106 (6), 063511, 2009
562009
On the Ni–Si phase transformation with/without native oxide
PS Lee, D Mangelinck, KL Pey, J Ding, JY Dai, CS Ho, A See
Microelectronic Engineering 51, 583-594, 2000
562000
Reducing hot tearing by grain boundary segregation engineering in additive manufacturing: example of an AlxCoCrFeNi high-entropy alloy
Z Sun, X Tan, C Wang, M Descoins, D Mangelinck, SB Tor, EA Jägle, ...
Acta Materialia 204, 116505, 2021
552021
Formation of Ni silicide from Ni (Au) films on (111) Si
D Mangelinck, P Gas, A Grob, B Pichaud, O Thomas
Journal of applied physics 79 (8), 4078-4086, 1996
551996
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