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Allen Gabor
Allen Gabor
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High performance 14nm SOI FinFET CMOS technology with 0.0174µm2 embedded DRAM and 15 levels of Cu metallization
CH Lin, B Greene, S Narasimha, J Cai, A Bryant, C Radens, V Narayanan, ...
2014 IEEE International Electron Devices Meeting, 3.8. 1-3.8. 3, 2014
1812014
High performance 45-nm SOI technology with enhanced strain, porous low-k BEOL, and immersion lithography
P Agnello, T Ivers, C Warm, R Wise, R Wachnik, D Schepis, S Sankaran, ...
2006 International Electron Devices Meeting, 1-4, 2006
1332006
Binary OPC for assist feature layout optimization
LW Liebmann, RA Ferguson, AH Gabor, MA Lavin
US Patent 7,001,693, 2006
972006
RTA-driven intra-die variations in stage delay, and parametric sensitivities for 65nm technology
B Walsh, H Utomo, E Leobandung, A Mahorowala, D Mocuta, K Miyamoto, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 170-171, 2006
962006
Imaging polymers with supercritical carbon dioxide
CK Ober, AH Gabor, P Gallagher‐Wetmore, RD Allen
Advanced Materials 9 (13), 1039-1043, 1997
941997
A high performance 90nm SOI technology with 0.992 /spl mu/m2 6T-SRAM cell
M Khare, SH Ku, RA Donaton, S Greco, C Brodsky, X Chen, A Chou, ...
Digest. International Electron Devices Meeting,, 407-410, 2002
632002
Lithographic properties of poly (tert-butyl methacrylate)-based block and random copolymer resists designed for 193 nm wavelength exposure tools
AH Gabor, LC Pruette, CK Ober
Chemistry of materials 8 (9), 2282-2290, 1996
561996
Silicon containing polymer in applications for 193-nm high-NA lithography processes
S Burns, D Pfeiffer, A Mahorowala, K Petrillo, A Clancy, K Babich, ...
Advances in Resist Technology and Processing XXIII 6153, 201-212, 2006
502006
Block and random copolymer resists designed for 193-nm lithography and environmentally friendly supercritical CO2 development
AH Gabor, RD Allen, PM Gallagher-Wetmore, CK Ober
Advances in Resist Technology and Processing XIII 2724, 410-417, 1996
491996
Synthesis and lithographic characterization of block copolymer resists consisting of both poly (styrene) blocks and hydrosiloxane-modified poly (diene) blocks
AH Gabor, EA Lehner, G Mao, LA Schneggenburger, CK Ober
Chemistry of materials 6 (7), 927-934, 1994
491994
Silicon-containing block copolymer resist materials
AH Gabor, CK Ober
461995
Line-edge roughness performance targets for EUV lithography
TA Brunner, X Chen, A Gabor, C Higgins, L Sun, CA Mack
Extreme Ultraviolet (EUV) Lithography VIII 10143, 48-57, 2017
452017
Supercritical fluid processing: Opportunities for new resist materials and processes
PM Gallagher-Wetmore, CK Ober, AH Gabor, RD Allen
Metrology, Inspection, and Process Control for Microlithography X 2725, 289-299, 1996
451996
Pitch-based subresolution assist feature design
LW Liebmann, AH Gabor, RL Gordon, CA Fonseca, M Burkhardt
US Patent 6,964,032, 2005
332005
Photogenerators of sulfamic acids; use in chemically amplified single layer resists
K JM, T AG, M AN, B JJ
Journal of Photopolymer Science and Technology 11 (3), 419-429, 1998
301998
Overlay improvement roadmap: strategies for scanner control and product disposition for 5-nm overlay
NM Felix, AH Gabor, VC Menon, PP Longo, SD Halle, C Koay, ...
Metrology, Inspection, and Process Control for Microlithography XXV 7971 …, 2011
292011
Bilayer resist and process for preparing same
CK Ober, AH Gabor, EA Lehner, G Mao, LA Schneggenburger
US Patent 5,318,877, 1994
291994
193 nm single layer resist strategies, concepts, and recent results
O Nalamasu, FM Houlihan, RA Cirelli, AG Timko, GP Watson, RS Hutton, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
281998
Composite structures to prevent pattern collapse
CJ Brodsky, AH Gabor, J Perez
US Patent 7,799,503, 2010
272010
193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids
FM Houlihan, JM Kometani, AG Timko, RS Hutton, RA Cirelli, ...
Advances in Resist Technology and Processing XV 3333, 73-82, 1998
271998
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