Greg Mordi
Greg Mordi
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MoS2 functionalization for ultra-thin atomic layer deposited dielectrics
A Azcatl, S McDonnell, S KC, X Peng, H Dong, X Qin, R Addou, GI Mordi, ...
Applied Physics Letters 104 (11), 2014
Atomic layer deposition of dielectrics on graphene using reversibly physisorbed ozone
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
ACS nano 6 (3), 2722-2730, 2012
Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices
B Lee, G Mordi, MJ Kim, YJ Chabal, EM Vogel, RM Wallace, KJ Cho, ...
Applied Physics Letters 97 (4), 2010
Rapid selective etching of PMMA residues from transferred graphene by carbon dioxide
C Gong, HC Floresca, D Hinojos, S McDonnell, X Qin, Y Hao, ...
The Journal of Physical Chemistry C 117 (44), 23000-23008, 2013
Partially fluorinated graphene: structural and electrical characterization
L Cheng, S Jandhyala, G Mordi, AT Lucero, J Huang, A Azcatl, R Addou, ...
ACS Applied Materials & Interfaces 8 (7), 5002-5008, 2016
Controlling the atomic layer deposition of titanium dioxide on silicon: dependence on surface termination
S McDonnell, RC Longo, O Seitz, JB Ballard, G Mordi, D Dick, JHG Owen, ...
The Journal of Physical Chemistry C 117 (39), 20250-20259, 2013
Rigid substrate process to achieve high mobility in graphene field-effect transistors on a flexible substrate
S Lee, OD Iyore, S Park, YG Lee, S Jandhyala, CG Kang, G Mordi, Y Kim, ...
Carbon 68, 791-797, 2014
Scaling of HfO2 dielectric on CVD graphene
S McDonnell, A Azcatl, G Mordi, C Floresca, A Pirkle, L Colombo, J Kim, ...
Applied Surface Science 294, 95-99, 2014
Graphene-ferroelectric hybrid devices for multi-valued memory system
S Jandhyala, G Mordi, D Mao, MW Ha, MA Quevedo-Lopez, BE Gnade, ...
Applied Physics Letters 103 (2), 2013
Low-κ organic layer as a top gate dielectric for graphene field effect transistors
G Mordi, S Jandhyala, C Floresca, S McDonnell, MJ Kim, RM Wallace, ...
Applied Physics Letters 100 (19), 2012
Atomic-layer-deposited Al2O3 as gate dielectrics for graphene-based devices
B Lee, G Mordi, T Park, L Goux, YJ Chabal, K Cho, EM Vogel, M Kim, ...
ECS Transactions 19 (5), 225, 2009
ACS Nano 6, 2722 (2012)
S Jandhyala, G Mordi, B Lee, G Lee, C Floresca, PR Cha, J Ahn, ...
In situ electrical studies of ozone based atomic layer deposition on graphene
S Jandhyala, G Mordi, B Lee, J Kim
ECS Transactions 45 (4), 39, 2012
Triangular-pulse measurement for hysteresis of high-performance and flexible graphene field-effect transistors
S Park, S Lee, G Mordi, S Jandhyala, MW Ha, JS Lee, L Colombo, ...
IEEE Electron Device Letters 35 (2), 277-279, 2014
Atomically-precise three-dimensional top down fabrication
JB Ballard, JHG Owen, E Fuchs, S McDonnell, D Dick, G Mordi, A Azcatl, ...
2013 Transducers & Eurosensors XXVII: The 17th International Conference on …, 2013
Atomic layer deposited Al2O3 dielectrics using ozone functionalization of graphene
S Jandhyala, G Mordi, B Lee, J Kim
2011 IEEE Nanotechnology Materials and Devices Conference, 94-97, 2011
Patterned Atomic Layer Deposition on Scanning Tunneling Microscope constructed templates
A Azcatl, J Ballard, Y Chabal, KJ Cho, D Dick, J Owen, R Longo, ...
Nanotechnology, 481-484, 2013
In Situ Electrical Studies of Ozone Based Atomic Layer Deposition on Graphene
J Kim, S Jandhyala, G Mordi, B Lee
ECS Meeting Abstracts, 758, 2012
Implementation of Parylene as a Low- Kappa Gate Dielectric Material for Graphene Field Effect Transistors(GFETs)
G Mordi, S Jandhyala, J Kim
AIP Conference Proceedings, 2012
Scaling Down High- Kappa Gate Dielectrics for Graphene-Based Device Applications
S Jandhyala, G Mordi, J Kim
AIP Conference Proceedings, 2012
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