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kyung park
kyung park
Verified email at yonsei.ac.kr
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Year
Solution-processed InGaZnO-based thin film transistors for printed electronics applications
JH Lim, JH Shim, JH Choi, J Joo, K Park, H Jeon, MR Moon, D Jung, ...
Applied Physics Letters 95 (1), 2009
1172009
Comparative study of amorphous and crystalline (Ba, Sr) TiO3 thin films deposited by laser ablation
P Bhattacharya, T Komeda, KPK Park, YNY Nishioka
Japanese journal of applied physics 32 (9S), 4103, 1993
1001993
Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films
SM Hwang, SM Lee, K Park, MS Lee, J Joo, JH Lim, H Kim, JJ Yoon, ...
Applied Physics Letters 98 (2), 2011
682011
Influence of post-annealing on the off current of MoS2 field-effect transistors
SD Namgung, S Yang, K Park, AJ Cho, H Kim, JY Kwon
Nanoscale research letters 10, 1-6, 2015
632015
Multi-layer MoS2 FET with small hysteresis by using atomic layer deposition Al2O3 as gate insulator
AJ Cho, S Yang, K Park, SD Namgung, H Kim, JY Kwon
ECS Solid State Letters 3 (10), Q67, 2014
552014
Reliability of crystalline indium–gallium–zinc-oxide thin-film transistors under bias stress with light illumination
K Park, HW Park, HS Shin, J Bae, KS Park, I Kang, KB Chung, JY Kwon
IEEE Transactions on Electron Devices 62 (9), 2900-2905, 2015
462015
Control of grain structure of laser-deposited (Ba, Sr) TiO3 films to reduce leakage current
P Bhattacharya, KPK Park, YNY Nishioka
Japanese journal of applied physics 33 (9S), 5231, 1994
461994
Effect of active layer thickness on device performance of tungsten-doped InZnO thin-film transistor
HW Park, K Park, JY Kwon, D Choi, KB Chung
IEEE Transactions on Electron Devices 64 (1), 159-163, 2016
442016
The effects of active layer thickness and annealing conditions on the electrical performance of ZnON thin-film transistors
J Park, YS Kim, JH Kim, K Park, YC Park, HS Kim
Journal of Alloys and Compounds 688, 666-671, 2016
402016
The effects of the microstructure of ZnO films on the electrical performance of their thin film transistors
BI Hwang, K Park, HS Chun, CH An, H Kim, HJ Lee
Applied Physics Letters 93 (22), 2008
322008
A Study on the Thermal Stabilities of the NiGe and Ni1− x Ta x Ge Systems
K Park, BH Lee, D Lee, DH Ko, KH Kwak, CW Yang, H Kim
Journal of The Electrochemical Society 154 (7), H557, 2007
322007
Highly reliable amorphous In-Ga-Zn-O thin-film transistors through the addition of nitrogen doping
K Park, JH Kim, T Sung, HW Park, JH Baeck, J Bae, KS Park, S Yoon, ...
IEEE Transactions on Electron Devices 66 (1), 457-463, 2018
302018
Impact of bias stability for crystalline InZnO thin-film transistors
H Kim, D Choi, S Park, K Park, HW Park, KB Chung, JY Kwon
Applied Physics Letters 110 (23), 2017
272017
Effects of fluorine doping on the electrical performance of ZnON thin-film transistors
HD Kim, JH Kim, K Park, JH Kim, J Park, YJ Kim, HS Kim
ACS applied materials & interfaces 9 (29), 24688-24695, 2017
252017
Microstructural evolution and electrical characteristics of Co-germanide contacts on Ge
K Park, CH An, MS Lee, CW Yang, HJ Lee, H Kim
Journal of The Electrochemical Society 156 (4), H229, 2009
222009
Effect of sintering time at low temperature on the properties of IGZO TFTs fabricated by using the sol-gel process
JH Choi, JH Shim, SM Hwang, J Joo, K Park, H Kim, HJ Lee, JH Lim, ...
J. Korean Phys. Soc 57, 1836-1841, 2010
212010
Light-induced bias stability of crystalline indium-tin-zinc-oxide thin film transistors
S Park, K Park, H Kim, HW Park, KB Chung, JY Kwon
Applied Surface Science 526, 146655, 2020
192020
Enhanced electrical and optical properties of single-layered MoS2 by incorporation of aluminum
HJ Kim, S Yang, H Kim, JY Moon, K Park, YJ Park, JY Kwon
Nano Research 11, 731-740, 2018
172018
A transparent solar cell based on a mechanically exfoliated GaTe and InGaZnO p-n heterojunction
AJ Cho, K Park, S Park, MK Song, KB Chung, JY Kwon
Journal of Materials Chemistry C 5 (17), 4327-4334, 2017
172017
Highly stable thin-film transistors based on indium oxynitride semiconductor
HD Kim, JH Kim, K Park, YC Park, S Kim, YJ Kim, J Park, HS Kim
ACS applied materials & interfaces 10 (18), 15873-15879, 2018
152018
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