| Solution-processed InGaZnO-based thin film transistors for printed electronics applications JH Lim, JH Shim, JH Choi, J Joo, K Park, H Jeon, MR Moon, D Jung, ... Applied Physics Letters 95 (1), 2009 | 116 | 2009 |
| Effect of annealing temperature on microstructural evolution and electrical properties of sol-gel processed ZrO2/Si films SM Hwang, SM Lee, K Park, MS Lee, J Joo, JH Lim, H Kim, JJ Yoon, ... Applied Physics Letters 98 (2), 2011 | 65 | 2011 |
| Influence of post-annealing on the off current of MoS2 field-effect transistors SD Namgung, S Yang, K Park, AJ Cho, H Kim, JY Kwon Nanoscale research letters 10, 1-6, 2015 | 62 | 2015 |
| Multi-layer MoS2 FET with small hysteresis by using atomic layer deposition Al2O3 as gate insulator AJ Cho, S Yang, K Park, SD Namgung, H Kim, JY Kwon ECS Solid State Letters 3 (10), Q67, 2014 | 56 | 2014 |
| Reliability of crystalline indium–gallium–zinc-oxide thin-film transistors under bias stress with light illumination K Park, HW Park, HS Shin, J Bae, KS Park, I Kang, KB Chung, JY Kwon IEEE Transactions on Electron Devices 62 (9), 2900-2905, 2015 | 44 | 2015 |
| Effect of active layer thickness on device performance of tungsten-doped InZnO thin-film transistor HW Park, K Park, JY Kwon, D Choi, KB Chung IEEE Transactions on Electron Devices 64 (1), 159-163, 2016 | 43 | 2016 |
| The effects of active layer thickness and annealing conditions on the electrical performance of ZnON thin-film transistors J Park, YS Kim, JH Kim, K Park, YC Park, HS Kim Journal of Alloys and Compounds 688, 666-671, 2016 | 37 | 2016 |
| The effects of the microstructure of ZnO films on the electrical performance of their thin film transistors BI Hwang, K Park, HS Chun, CH An, H Kim, HJ Lee Applied Physics Letters 93 (22), 2008 | 32 | 2008 |
| A Study on the Thermal Stabilities of the NiGe and Ni1− x Ta x Ge Systems K Park, BH Lee, D Lee, DH Ko, KH Kwak, CW Yang, H Kim Journal of The Electrochemical Society 154 (7), H557, 2007 | 32 | 2007 |
| Highly reliable amorphous In-Ga-Zn-O thin-film transistors through the addition of nitrogen doping K Park, JH Kim, T Sung, HW Park, JH Baeck, J Bae, KS Park, S Yoon, ... IEEE Transactions on Electron Devices 66 (1), 457-463, 2018 | 29 | 2018 |
| Effects of fluorine doping on the electrical performance of ZnON thin-film transistors HD Kim, JH Kim, K Park, JH Kim, J Park, YJ Kim, HS Kim ACS applied materials & interfaces 9 (29), 24688-24695, 2017 | 25 | 2017 |
| Impact of bias stability for crystalline InZnO thin-film transistors H Kim, D Choi, S Park, K Park, HW Park, KB Chung, JY Kwon Applied Physics Letters 110 (23), 2017 | 23 | 2017 |
| Microstructural evolution and electrical characteristics of Co-germanide contacts on Ge K Park, CH An, MS Lee, CW Yang, HJ Lee, H Kim Journal of The Electrochemical Society 156 (4), H229, 2009 | 22 | 2009 |
| Effect of sintering time at low temperature on the properties of IGZO TFTs fabricated by using the sol-gel process JH Choi, JH Shim, SM Hwang, J Joo, K Park, H Kim, HJ Lee, JH Lim, ... J. Korean Phys. Soc 57, 1836-1841, 2010 | 21 | 2010 |
| Light-induced bias stability of crystalline indium-tin-zinc-oxide thin film transistors S Park, K Park, H Kim, HW Park, KB Chung, JY Kwon Applied Surface Science 526, 146655, 2020 | 19 | 2020 |
| Enhanced electrical and optical properties of single-layered MoS2 by incorporation of aluminum HJ Kim, S Yang, H Kim, JY Moon, K Park, YJ Park, JY Kwon Nano Research 11, 731-740, 2018 | 17 | 2018 |
| Highly stable thin-film transistors based on indium oxynitride semiconductor HD Kim, JH Kim, K Park, YC Park, S Kim, YJ Kim, J Park, HS Kim ACS applied materials & interfaces 10 (18), 15873-15879, 2018 | 15 | 2018 |
| A transparent solar cell based on a mechanically exfoliated GaTe and InGaZnO p-n heterojunction AJ Cho, K Park, S Park, MK Song, KB Chung, JY Kwon Journal of Materials Chemistry C 5 (17), 4327-4334, 2017 | 15 | 2017 |
| Effects of substrate heating on the amorphous structure of InGaZnO films and the electrical properties of their thin film transistors MR Moon, S Na, H Jeon, CH An, K Park, D Jung, H Kim, YB Lee, HJ Lee Applied Physics Express 3 (11), 111101, 2010 | 13 | 2010 |
| Effect of Y, Gd, Dy, and Ce doping on the microstructural and electrical properties of sol-gel-deposited ZrO2 film MS Lee, CH An, K Park, JY Choi, H Kim Journal of The Electrochemical Society 158 (6), G133, 2011 | 12 | 2011 |
