Yu-Seon Kang
Yu-Seon Kang
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MoS2–InGaZnO Heterojunction Phototransistors with Broad Spectral Responsivity
J Yang, H Kwak, Y Lee, YS Kang, MH Cho, JH Cho, YH Kim, SJ Jeong, ...
ACS applied materials & interfaces 8 (13), 8576-8582, 2016
Thickness dependence on crystalline structure and interfacial reactions in HfO2 films on InP (001) grown by atomic layer deposition
YS Kang, CY Kim, MH Cho, KB Chung, CH An, H Kim, HJ Lee, CS Kim, ...
Applied Physics Letters 97 (17), 2010
Controlling the defects and transition layer in SiO2 films grown on 4H-SiC via direct plasma-assisted oxidation
DK Kim, KS Jeong, YS Kang, HK Kang, SW Cho, SO Kim, D Suh, S Kim, ...
Scientific reports 6 (1), 34945, 2016
Structural Evolution and the Control of Defects in Atomic Layer Deposited HfO2–Al2O3 Stacked Films on GaAs
YS Kang, DK Kim, KS Jeong, MH Cho, CY Kim, KB Chung, H Kim, ...
ACS Applied Materials & Interfaces 5 (6), 1982-1989, 2013
Al2O3 Passivation Effect in HfO2·Al2O3 Laminate Structures Grown on InP Substrates
HK Kang, YS Kang, DK Kim, M Baik, JD Song, Y An, H Kim, MH Cho
ACS Applied Materials & Interfaces 9 (20), 17526-17535, 2017
Structural and Electrical Properties of EOT HfO2 (<1 nm) Grown on InAs by Atomic Layer Deposition and Its Thermal Stability
YS Kang, HK Kang, DK Kim, KS Jeong, M Baik, Y An, H Kim, JD Song, ...
ACS applied materials & interfaces 8 (11), 7489-7498, 2016
Electrical properties and thermal stability in stack structure of HfO2/Al2O3/InSb by atomic layer deposition
M Baik, HK Kang, YS Kang, KS Jeong, Y An, S Choi, H Kim, JD Song, ...
Scientific reports 7 (1), 11337, 2017
Effects of Surface Chemical Structure on the Mechanical Properties of Si1–xGex Nanowires
JW Ma, WJ Lee, JM Bae, KS Jeong, YS Kang, MH Cho, JH Seo, JP Ahn, ...
Nano letters 13 (3), 1118-1125, 2013
Improving Electrical Properties by Effective Sulfur Passivation via Modifying the Surface State of Substrate in HfO2/InP Systems
HK Kang, YS Kang, M Baik, KS Jeong, DK Kim, JD Song, MH Cho
The Journal of Physical Chemistry C 122 (13), 7226-7235, 2018
Effects of Nitrogen Incorporation in HfO2 Grown on InP by Atomic Layer Deposition: An Evolution in Structural, Chemical, and Electrical Characteristics
YS Kang, DK Kim, HK Kang, KS Jeong, MH Cho, DH Ko, H Kim, JH Seo, ...
ACS applied materials & interfaces 6 (6), 3896-3906, 2014
Defect states in epitaxial HfO2 films induced by atomic transport from n-GaAs (100) substrate
CY Kim, KS Jeong, YS Kang, SW Cho, MH Cho, KB Chung, DH Ko, Y Yi, ...
Journal of Applied Physics 109 (11), 2011
Effects of thermal and electrical stress on defect generation in InAs metal–oxide–semiconductor capacitor
M Baik, HK Kang, YS Kang, KS Jeong, C Lee, H Kim, JD Song, MH Cho
Applied Surface Science 467, 1161-1169, 2019
Surface chemical structure and doping characteristics of boron-doped Si nanowires fabricated by plasma doping
SH Oh, JW Ma, JM Bae, Y Kang, JP Ahn, HK Kang, J Chae, D Suh, ...
Applied Surface Science 419, 1-8, 2017
Effects of spontaneous nitrogen incorporation by a 4 H-SiC (0001) surface caused by plasma nitridation
DK Kim, YS Kang, KS Jeong, HK Kang, SW Cho, KB Chung, H Kim, ...
Journal of Materials Chemistry C 3 (19), 5078-5088, 2015
Defect States below the Conduction Band Edge of HfO2 Grown on InP by Atomic Layer Deposition
YS Kang, DK Kim, HK Kang, S Cho, S Choi, H Kim, JH Seo, J Lee, ...
The Journal of Physical Chemistry C 119 (11), 6001-6008, 2015
Interfacial Reactions between HfO2 Films Prepared by Atomic-Layer-Deposition and an InP Substrate Using Postnitridation with NH3 Vapor
YS Kang, CY Kim, MH Cho, CH An, H Kim, JH Seo, CS Kim, TG Lee, ...
Electrochemical and Solid-state letters 15 (4), G9, 2012
Electrical and band structural analyses of Ti1− xAlxOy films grown by atomic layer deposition on p-type GaAs
Y An, C Mahata, C Lee, S Choi, YC Byun, YS Kang, T Lee, J Kim, MH Cho, ...
Journal of Physics D: Applied Physics 48 (41), 415302, 2015
Electrical characteristics of HfO2 films on InP with different atomic‐layer‐deposition temperatures
CH An, C Mahata, YC Byun, MS Lee, YS Kang, MH Cho, H Kim
physica status solidi (a) 210 (7), 1381-1385, 2013
Defect-free erbium silicide formation using an ultrathin Ni interlayer
J Choi, S Choi, YS Kang, S Na, HJ Lee, MH Cho, H Kim
ACS Applied Materials & Interfaces 6 (16), 14712-14717, 2014
Change in crystalline structure and band alignment in atomic‐layer‐deposited HfO2 on InP using an annealing treatment
YS Kang, DK Kim, MH Cho, JH Seo, HK Shon, TG Lee, YD Cho, SW Kim, ...
physica status solidi (a) 210 (8), 1612-1617, 2013
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