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Francisco Servando Aguirre-Tostado
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GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
4932008
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 2009
3152009
Half-cycle atomic layer deposition reaction studies of Al2O3 on In0. 2Ga0. 8As (100) surfaces
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (20), 2008
1902008
Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4) 2S passivated GaAs (100) surfaces
M Milojevic, CL Hinkle, FS Aguirre-Tostado, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (25), 2008
1342008
Frequency dispersion reduction and bond conversion onn-type GaAs by in-situ surface oxide removal and passivation
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 91 (16), 163512-163512-3, 2007
1282007
Copper− Metal Deposition on Self Assembled Monolayer for Making Top Contacts in Molecular Electronic Devices
O Seitz, M Dai, FS Aguirre-Tostado, RM Wallace, YJ Chabal
Journal of the American Chemical Society 131 (50), 18159-18167, 2009
1092009
Optimisation of the ammonium sulphide (NH< sub> 4</sub>)< sub> 2</sub> S passivation process on In< sub> 0.53</sub> Ga< sub> 0.47</sub> As
B Brennan, M Milojevic, CL Hinkle, FS Aguirre-Tostado, G Hughes, ...
Applied Surface Science 257 (9), 4082-4090, 2011
98*2011
Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO2/Al2O3 nanolaminate gate dielectric
T Yang, Y Xuan, D Zemlyanov, T Shen, YQ Wu, JM Woodall, PD Ye, ...
Applied Physics Letters 91 (14), 142122-142122-3, 2007
782007
S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates
FS Aguirre-Tostado, M Milojevic, KJ Choi, HC Kim, CL Hinkle, EM Vogel, ...
Applied Physics Letters 93 (6), 061907-061907-3, 2008
742008
Indium stability on InGaAs during atomic H surface cleaning
FS Aguirre-Tostado, M Milojevic, CL Hinkle, EM Vogel, RM Wallace, ...
Applied Physics Letters 92 (17), 2008
732008
The slope-background for the near-peak regimen of photoemission spectra
A Herrera-Gomez, M Bravo-Sanchez, FS Aguirre-Tostado, ...
Journal of Electron Spectroscopy and Related Phenomena 189, 76-80, 2013
662013
Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics
CL Hinkle, AM Sonnet, M Milojevic, FS Aguirre-Tostado, HC Kim, J Kim, ...
Applied Physics Letters 93 (11), 113506-113506-3, 2008
642008
Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
S McDonnell, H Dong, JM Hawkins, B Brennan, M Milojevic, ...
Applied Physics Letters 100 (14), 2012
612012
Photoemission from the Sr/Si (001) interface
A Herrera-Gomez, FS Aguirre-Tostado, Y Sun, P Pianetta, Z Yu, ...
Journal of Applied Physics 90 (12), 6070-6072, 2001
572001
Composition dependence of the work function of Ta1-xAlxNy metal gates
HN Alshareef, K Choi, HC Wen, H Luan, H Harris, Y Senzaki, P Majhi, ...
Applied Physics Letters 88 (7), 072108-072108-3, 2006
512006
Report on the 47th IUVSTA Workshop ‘Angle‐Resolved XPS: the current status and future prospects for angle‐resolved XPS of nano and subnano films
A Herrera‐Gomez, JT Grant, PJ Cumpson, M Jenko, FS Aguirre‐Tostado, ...
Surface and Interface Analysis 41 (11), 840-857, 2009
502009
Instrument-related geometrical factors affecting the intensity in XPS and ARXPS experiments
A Herrera-Gomez, FS Aguirre-Tostado, PG Mani-Gonzalez, ...
Journal of Electron Spectroscopy and Related Phenomena 184, 487–500, 2011
442011
Aging effect of plasma-treated carbon surfaces: An overlooked phenomenon
JI Mendez-Linan, E Ortiz-Ortega, MF Jimenez-Moreno, MI Mendivil-Palma, ...
Carbon 169, 32-44, 2020
402020
P-type thin films transistors with solution-deposited lead sulfide films as semiconductor
A Carrillo-Castillo, A Salas-Villasenor, I Mejia, S Aguirre-Tostado, ...
Thin Solid Films 520 (7), 3107-3110, 2012
402012
In situ study of surface reactions of atomic layer deposited LaxAl2-xO3 films on atomically clean In0.2Ga0.8As
FS Aguirre-Tostado, M Milojevic, B Lee, J Kim, RM Wallace
Applied Physics Letters 93 (17), 172907-172907-3, 2008
402008
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