| Scalable energy-efficient magnetoelectric spin–orbit logic S Manipatruni, DE Nikonov, CC Lin, TA Gosavi, H Liu, B Prasad, ... Nature 565 (7737), 35-42, 2019 | 707 | 2019 |
| Mechanical spin control of nitrogen-vacancy centers in diamond ER MacQuarrie, TA Gosavi, NR Jungwirth, SA Bhave, GD Fuchs Physical review letters 111 (22), 227602, 2013 | 282 | 2013 |
| Coherent control of a nitrogen-vacancy center spin ensemble with a diamond mechanical resonator ER MacQuarrie, TA Gosavi, AM Moehle, NR Jungwirth, SA Bhave, ... Optica 2 (3), 233-238, 2015 | 117 | 2015 |
| Continuous dynamical decoupling of a single diamond nitrogen-vacancy center spin with a mechanical resonator ER MacQuarrie, TA Gosavi, SA Bhave, GD Fuchs Physical Review B 92 (22), 224419, 2015 | 91 | 2015 |
| Spin–orbit magnetic state readout in scaled ferromagnetic/heavy metal nanostructures VT Pham, I Groen, S Manipatruni, WY Choi, DE Nikonov, E Sagasta, ... Nature Electronics, 1-7, 2020 | 71 | 2020 |
| Ultralow voltage manipulation of ferromagnetism B Prasad, YL Huang, RV Chopdekar, Z Chen, J Steffes, S Das, Q Li, ... Advanced materials 32 (28), 2001943, 2020 | 64 | 2020 |
| Manipulating magnetoelectric energy landscape in multiferroics YL Huang, D Nikonov, C Addiego, RV Chopdekar, B Prasad, L Zhang, ... Nature communications 11 (1), 2836, 2020 | 64 | 2020 |
| Advancing monolayer 2-D nMOS and pMOS transistor integration from growth to van der Waals interface engineering for ultimate CMOS scaling C Dorow, K O’Brien, CH Naylor, S Lee, A Penumatcha, A Hsiao, T Tronic, ... IEEE Transactions on Electron Devices 68 (12), 6592-6598, 2021 | 58 | 2021 |
| Enabling ultra-low-voltage switching in BaTiO3 Y Jiang, E Parsonnet, A Qualls, W Zhao, S Susarla, D Pesquera, ... Nature materials 21 (7), 779-785, 2022 | 52 | 2022 |
| Novel Spin–Orbit Torque Generation at Room Temperature in an All‐Oxide Epitaxial La0.7Sr0.3MnO3/SrIrO3 System X Huang, S Sayed, J Mittelstaedt, S Susarla, S Karimeddiny, L Caretta, ... Advanced Materials 33 (24), 2008269, 2021 | 52 | 2021 |
| Tunable charge to spin conversion in strontium iridate thin films AS Everhardt, M Dc, X Huang, S Sayed, TA Gosavi, Y Tang, CC Lin, ... Physical Review Materials 3 (5), 051201, 2019 | 49 | 2019 |
| Toward Intrinsic Ferroelectric Switching in Multiferroic E Parsonnet, YL Huang, T Gosavi, A Qualls, D Nikonov, CC Lin, I Young, ... Physical review letters 125 (6), 067601, 2020 | 47 | 2020 |
| Stacked ferroelectric non-planar capacitors in a memory bit-cell RK Dokania, N Sato, T Gosavi, P Pandey, D Olaosebikan, A Mathuriya, ... US Patent 11,423,967, 2022 | 28 | 2022 |
| Low‐Voltage Magnetoelectric Coupling in Fe0.5Rh0.5/0.68PbMg1/3Nb2/3O3‐0.32PbTiO3 Thin‐Film Heterostructures W Zhao, J Kim, X Huang, L Zhang, D Pesquera, GAP Velarde, T Gosavi, ... Advanced Functional Materials 31 (40), 2105068, 2021 | 24 | 2021 |
| CMOS compatible process integration of SOT-MRAM with heavy-metal bi-layer bottom electrode and 10ns field-free SOT switching with STT assist N Sato, GA Allen, WP Benson, B Buford, A Chakraborty, M Christenson, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 24 | 2020 |
| Dual hydrogen barrier layer for memory devices N Sato, N Mukherjee, M Manfrini, T Gosavi, RK Dokania, SJ Rathi, ... US Patent 11,869,928, 2024 | 23 | 2024 |
| Spin orbit torque (SOT) memory devices with enhanced tunnel magnetoresistance ratio and their methods of fabrication K Oguz, T Gosavi, S Manipatruni, C Kuo, M Doczy, K O'brien US Patent 11,257,613, 2022 | 23 | 2022 |
| High blocking temperature spin orbit torque electrode T Gosavi, S Manipatruni, K Oguz, I Young, K O'brien, G Allen, N Sato US Patent 11,251,365, 2022 | 20 | 2022 |
| Metal/ two-dimensional electron gases for spin-to-charge conversion LM Vicente-Arche, S Mallik, M Cosset-Cheneau, P Noël, DC Vaz, F Trier, ... Physical Review Materials 5 (6), 064005, 2021 | 20 | 2021 |
| Spin orbit torque (SOT) memory devices and their methods of fabrication N Sato, A Smith, T Gosavi, S Manipatruni, K Oguz, K O'brien, T Rahman, ... US Patent 11,367,749, 2022 | 19 | 2022 |
Sasi ManipatruniKepler/Intel/CornellVerified email at cornell.edu
