Junqi XIE
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Science requirements and detector concepts for the electron-ion collider: EIC yellow report
RA Khalek, A Accardi, J Adam, D Adamiak, W Akers, M Albaladejo, ...
Nuclear Physics A 1026, 122447, 2022
Extended performance GeSn/Si (100) pin photodetectors for full spectral range telecommunication applications
J Mathews, R Roucka, J Xie, SQ Yu, J Menéndez, J Kouvetakis
Applied Physics Letters 95, 133506, 2009
Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics
YY Fang, J Xie, J Tolle, R Roucka, VR D’Costa, AVG Chizmeshya, ...
Journal of the American Chemical Society 130 (47), 16095-16102, 2008
Synthesis, stability range, and fundamental properties of Si− Ge− Sn semiconductors grown directly on Si (100) and Ge (100) platforms
J Xie, AVG Chizmeshya, J Tolle, VR D’Costa, J Menendez, J Kouvetakis
Chemistry of Materials 22 (12), 3779-3789, 2010
Determining the gluonic gravitational form factors of the proton
B Duran, ZE Meziani, S Joosten, MK Jones, S Prasad, C Peng, ...
Nature 615 (7954), 813-816, 2023
A brief technical history of the large-area picosecond photodetector (LAPPD) collaboration
BW Adams, K Attenkofer, M Bogdan, K Byrum, A Elagin, JW Elam, ...
arXiv preprint arXiv:1603.01843, 2016
Direct integration of active Ge (SiSn) semiconductors on Si (100)
J Xie, J Tolle, VR D’Costa, AVG Chizmeshya, J Menendez, J Kouvetakis
Applied Physics Letters 95, 181909, 2009
Ge1− ySny photoconductor structures at 1.55 μm: From advanced materials to prototype devices
R Roucka, J Xie, J Kouvetakis, J Mathews, V D’costa, J Menendez, J Tolle, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
Direct observation of bi-alkali antimonide photocathodes growth via in operando x-ray diffraction studies
M Ruiz-Osés, S Schubert, K Attenkofer, I Ben-Zvi, X Liang, E Muller, ...
APL materials 2 (12), 2014
Molecular approaches to p-and n-nanoscale doping of Ge1− ySny semiconductors: Structural, electrical and transport properties
J Xie, J Tolle, VR D’Costa, C Weng, AVG Chizmeshya, J Menendez, ...
Solid-state electronics 53 (8), 816-823, 2009
AI-optimized detector design for the future Electron-Ion Collider: the dual-radiator RICH case
E Cisbani, A Del Dotto, C Fanelli, M Williams, M Alfred, F Barbosa, ...
Journal of Instrumentation 15 (05), P05009, 2020
An experimental program with high duty-cycle polarized and unpolarized positron beams at Jefferson Lab
A Accardi, A Afanasev, I Albayrak, SF Ali, M Amaryan, JRM Annand, ...
The European Physical Journal A 57 (8), 261, 2021
Codeposition of ultrasmooth and high quantum efficiency cesium telluride photocathodes
M Gaowei, J Sinsheimer, D Strom, J Xie, J Cen, J Walsh, E Muller, ...
Physical Review Accelerators and Beams 22 (7), 073401, 2019
Ultrafast inorganic scintillator-based front imager for Gigahertz Hard X-ray imaging
C Hu, L Zhang, RY Zhu, M Demarteau, R Wagner, L Xia, J Xie, X Li, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2019
In-situ synchrotron x-ray characterization of K2CsSb photocathode grown by ternary co-evaporation
Z Ding, M Gaowei, J Sinsheimer, J Xie, S Schubert, H Padmore, E Muller, ...
Journal of Applied Physics 121 (5), 2017
Bi-alkali antimonide photocathode growth: An X-ray diffraction study
S Schubert, J Wong, J Feng, S Karkare, H Padmore, M Ruiz-Osés, ...
Journal of Applied Physics 120 (3), 2016
Wavelength-shifting properties of luminescence nanoparticles for high energy particle detection and specific physics process observation
S Sahi, S Magill, L Ma, J Xie, W Chen, B Jones, D Nygren
Scientific reports 8 (1), 10515, 2018
Quantum sensing for high energy physics
Z Ahmed, Y Alexeev, G Apollinari, A Arvanitaki, D Awschalom, ...
arXiv preprint arXiv:1803.11306, 2018
Synchrotron x-ray study of a low roughness and high efficiency K2CsSb photocathode during film growth
J Xie, M Demarteau, R Wagner, S Schubert, M Gaowei, K Attenkofer, ...
Journal of Physics D: Applied Physics 50 (20), 205303, 2017
Free‐Standing Bialkali Photocathodes Using Atomically Thin Substrates
H Yamaguchi, F Liu, J DeFazio, M Gaowei, CW Narvaez Villarrubia, J Xie, ...
Advanced Materials Interfaces 5 (13), 1800249, 2018
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