| Various threshold switching devices for integrate and fire neuron applications D Lee, M Kwak, K Moon, W Choi, J Park, J Yoo, J Song, S Lim, C Sung, ... Advanced Electronic Materials 5 (9), 1800866, 2019 | 113 | 2019 |
| Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang Applied Physics Letters 108 (15), 153502, 2016 | 105 | 2016 |
| Multi-layered NiOy/NbOx/NiOy fast drift-free threshold switch with high Ion/Ioff ratio for selector application AADHH Jaehyuk Park, Tobias Hadamek, Agham B. Posadas, Euijun Cha Scientific Reports 7 (4068), 2017 | 85 | 2017 |
| Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices J Yoo, J Park, J Song, S Lim, H Hwang Applied Physics Letters 111 (6), 063109, 2017 | 66 | 2017 |
| Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector J Park, E Cha, I Karpov, H Hwang Applied Physics Letters 108 (23), 232101, 2016 | 49 | 2016 |
| Effect of nitrogen doping on variability of TaOx-RRAM for low-power 3-Bit MLC applications SH Misha, N Tamanna, J Woo, S Lee, J Song, J Park, S Lim, J Park, ... ECS Solid State Letters 4 (3), P25, 2015 | 48 | 2015 |
| Structurally Engineered Stackable and Scalable 3D Titanium‐Oxide Switching Devices for High‐Density Nanoscale Memory D Lee, J Park, J Park, J Woo, E Cha, S Lee, K Moon, J Song, Y Koo, ... Advanced Materials 27 (1), 59-64, 2015 | 44 | 2015 |
| Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory FG Aga, J Woo, J Song, J Park, S Lim, C Sung, H Hwang Nanotechnology 28 (11), 115707, 2017 | 40 | 2017 |
| AC–Te-based binary OTS device exhibiting excellent performance and high thermal stability for selector application SA Chekol, J Yoo, J Park, J Song, C Sung, H Hwang Nanotechnology 29 (34), 345202, 2018 | 38 | 2018 |
| 3D Stackable and Scalable Binary Ovonic Threshold Switch Devices with Excellent Thermal Stability and Low Leakage Current for High‐Density Cross‐Point Memory Applications J Yoo, SH Kim, SA Chekol, J Park, C Sung, J Song, D Lee, H Hwang Advanced Electronic Materials 5 (7), 1900196, 2019 | 34 | 2019 |
| Monolithic integration of AgTe/TiO2based threshold switching device with TiN liner for steep slope field-effect transistors J Song, J Park, K Moon, J Woo, S Lim, J Yoo, D Lee, H Hwang 2016 IEEE International Electron Devices Meeting (IEDM), 25.3. 1-25.3. 4, 2016 | 32 | 2016 |
| Steep Slope Field-Effect Transistors With B–Te-Based Ovonic Threshold Switch Device J Yoo, D Lee, J Park, J Song, H Hwang IEEE Journal of the Electron Devices Society 6, 821-824, 2018 | 30 | 2018 |
| Retention modeling for ultra-thin density of Cu-based conductive bridge random access memory (CBRAM) FG Aga, J Woo, S Lee, J Song, J Park, J Park, S Lim, C Sung, H Hwang AIP Advances 6 (2), 025203, 2016 | 25 | 2016 |
| Te-based binary OTS selectors with excellent selectivity (>105), endurance (>108) and thermal stability (>450°C) J Yoo, Y Koo, SA Chekol, J Park, J Song, H Hwang 2018 IEEE Symposium on VLSI Technology, 207-208, 2018 | 24 | 2018 |
| Improved threshold switching characteristics of multi-layer NbOx for 3-D selector application HH Jaehyuk Park, Euijun Cha, Daeseok Lee, Sangheon Lee, Jeonghwan Song ... Microelectronic Engineering 147, 318-320, 2015 | 24 | 2015 |
| NbO2-Based Frequency Storable Coupled Oscillators for Associative Memory Application D Lee, E Cha, J Park, C Sung, K Moon, SA Chekol, H Hwang IEEE Journal of the Electron Devices Society 6, 250-253, 2018 | 20 | 2018 |
| Excellent threshold switching device (Ioff∼ 1 pA) with atom-scale metal filament for steep slope (< 5 mV/dec), ultra low voltage (Vdd= 0.25 V) FET applications S Lim, J Yoo, J Song, J Woo, J Park, H Hwang 2016 IEEE International Electron Devices Meeting (IEDM), 34.7. 1-37.7. 4, 2016 | 20 | 2016 |
| Understanding of the abrupt resistive transition in different types of threshold switching devices from materials perspective S Lee, J Yoo, J Park, H Hwang IEEE Transactions on Electron Devices 67 (7), 2878-2883, 2020 | 19 | 2020 |
| Multi-state resistance switching and variability analysis of HfOx based RRAM for ultra-high density memory applications A Prakash, JS Park, J Song, SJ Lim, JH Park, J Woo, E Cha, H Hwang 2015 International Symposium on Next-Generation Electronics (ISNE), 1-2, 2015 | 16 | 2015 |
| Hybrid Selector With Excellent Selectivity and Fast Switching Speed for X-Point Memory Array J Park, J Yoo, J Song, C Sung, H Hwang IEEE Electron Device Letters 39 (8), 1171-1174, 2018 | 15 | 2018 |
Hyunsang HwangPOSTECH, KoreaVerified email at postech.ac.kr
