Dae-Hwan Kang
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Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases
BS Lee, JR Abelson, SG Bishop, DH Kang, B Cheong, KB Kim
Journal of Applied Physics 97 (9), 2005
Full integration of highly manufacturable 512Mb PRAM based on 90nm technology
JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
One-dimensional heat conduction model for an electrical phase change random access memory device with an 8F2 memory cell (F= 0.15 μm)
DH Kang, DH Ahn, KB Kim, JF Webb, KW Yi
Journal of applied physics 94 (5), 3536-3542, 2003
Two-bit cell operation in diode-switch phase change memory cells with 90nm technology
DH Kang, JH Lee, JH Kong, D Ha, J Yu, CY Um, JH Park, F Yeung, ...
2008 Symposium on VLSI Technology, 98-99, 2008
Indium selenide (In2Se3) thin film for phase-change memory
H Lee, DH Kang, L Tran
Materials Science and Engineering: B 119 (2), 196-201, 2005
Phase change material and non-volatile memory device using the same
DH Anh, TY Lee, KB Kim, BK Cheong, DH Kang, JH Jeong, IH Kim, ...
US Patent 7,233,054, 2007
Switching behavior of indium selenide-based phase-change memory cell
H Lee, YK Kim, D Kim, DH Kang
IEEE transactions on magnetics 41 (2), 1034-1036, 2005
Characterization of atomic layer deposited WN x C y thin film as a diffusion barrier for copper metallization
SH Kim, SS Oh, HM Kim, DH Kang, KB Kim, WM Li, S Haukka, ...
Journal of The Electrochemical Society 151 (4), C272, 2004
Phase change memory devices and read methods using elapsed time-based read voltages
YN Hwang, DH Kang, CY Um
US Patent 7,969,798, 2011
IEDM Tech. Dig.
CW Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
IEDM Tech. Dig 2, 2006
Thermal atomic layer deposition (ALD) of Ru films for Cu direct plating
SH Choi, T Cheon, SH Kim, DH Kang, GS Park, S Kim
Journal of The Electrochemical Society 158 (6), D351, 2011
Atomic-layer-deposited thin films as diffusion barrier for copper metallization
SH Kim, SS Oh, KB Kim, DH Kang, WM Li, S Haukka, M Tuominen
Applied physics letters 82 (25), 4486-4488, 2003
An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode
DH Kang, IH Kim, J Jeong, B Cheong, DH Ahn, D Lee, HM Kim, KB Kim, ...
Journal of applied physics 100 (5), 2006
Time-resolved analysis of the set process in an electrical phase-change memory device
DH Kang, B Cheong, J Jeong, TS Lee, IH Kim, WM Kim, JY Huh
Applied Physics Letters 87 (25), 2005
Lower voltage operation of a phase change memory device with a highly resistive TiON layer
DH Kang, DH Ahn, MH Kwon, HS Kwon, KB Kim, KS Lee, B Cheong
Japanese journal of applied physics 43 (8R), 5243, 2004
Atomic layer deposition of RuAlO thin films as a diffusion barrier for seedless Cu interconnects
T Cheon, SH Choi, SH Kim, DH Kang
Electrochemical and Solid-State Letters 14 (5), D57, 2011
Neuromophic system and configuration method thereof
D Kang, KC Ryoo, HG Jun, H Jeong, JH Oh
US Patent 9,710,747, 2017
Resistance variable memory device and method of writing data
JH Lee, K Lee, HA Daewon, G Jeong, D Kang
US Patent 7,907,437, 2011
Memory device and method of manufacturing the same
JH Jeong, GH Koh, DH Kang
US Patent 9,941,333, 2018
Memory device including ovonic threshold switch adjusting threshold voltage thereof
M Terai, GH Koh, DH Kang
US Patent 9,741,764, 2017
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