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Dietz Nikolaus
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Seeded growth of AlN bulk crystals in m-and c-orientation
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ...
Journal of Crystal Growth 312 (1), 58-63, 2009
1672009
The growth and optical properties of large, high-quality AlN single crystals
M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ...
Journal of applied physics 96 (10), 5870-5876, 2004
1312004
GaN∕ AlGaN ultraviolet/infrared dual-band detector
G Ariyawansa, MBM Rinzan, M Alevli, M Strassburg, N Dietz, AGU Perera, ...
Applied physics letters 89 (9), 2006
912006
Native defect related optical properties of ZnGeP2
N Dietz, I Tsveybak, W Ruderman, G Wood, KJ Bachmann
Applied physics letters 65 (22), 2759-2761, 1994
741994
Sellmeier parameters for and GaP
FL Madarasz, JO Dimmock, N Dietz, KJ Bachmann
Journal of Applied Physics 87 (3), 1564-1565, 2000
672000
Different optical absorption edges in AlN bulk crystals grown in m-and c-orientations
P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, Z Sitar
Applied Physics Letters 93 (13), 2008
652008
Magnetic and optical properties of Ga1− xMnxN grown by metalorganic chemical vapour deposition
MH Kane, A Asghar, CR Vestal, M Strassburg, J Senawiratne, ZJ Zhang, ...
Semiconductor science and technology 20 (3), L5, 2005
642005
Characterization of InN layers grown by high-pressure chemical vapor deposition
M Alevli, G Durkaya, A Weerasekara, AGU Perera, N Dietz, W Fenwick, ...
Applied physics letters 89 (11), 2006
592006
Antiphase boundaries in GaP layers grown on (001) Si by chemical beam epitaxy
V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz
Acta Materialia 50 (6), 1275-1287, 2002
562002
InN growth by high-pressures chemical vapor deposition: Real-time optical growth characterization
V Woods, N Dietz
Materials Science and Engineering: B 127 (2-3), 239-250, 2006
542006
Heteroepitaxy of GaP on Si (100)
KJ Bachmann, U Rossow, N Sukidi, H Castleberry, N Dietz
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
491996
p-Polarized reflectance spectroscopy: a highly sensitive real-time monitoring technique to study surface kinetics under steady state epitaxial deposition conditions
N Dietz, KJ Bachmann
Vacuum 47 (2), 133-140, 1996
451996
Stacking faults and twins in gallium phosphide layers grown on silicon
V Narayanan, S Mahajan, KJ Bachmann, V Woods, N Dietz
Philosophical Magazine A 82 (4), 685-698, 2002
432002
Orientation mediated self-assembled gallium phosphide islands grown on silicon
V Narayanan, S Mahajan, N Sukidi, KJ Bachmann, V Woods, N Dietz
Philosophical Magazine A 80 (3), 555-572, 2000
432000
Defect identification in semiconductors by Brewster angle spectroscopy
HJ Lewerenz, N Dietz
Journal of applied physics 73 (10), 4975-4987, 1993
401993
A near-infrared range photodetector based on indium nitride nanocrystals obtained through laser ablation
B Tekcan, S Alkis, M Alevli, N Dietz, B Ortaç, N Biyikli, AK Okyay
IEEE Electron Device Letters 35 (9), 936-938, 2014
392014
The characterization of InN growth under high‐pressure CVD conditions
N Dietz, M Alevli, V Woods, M Strassburg, H Kang, IT Ferguson
physica status solidi (b) 242 (15), 2985-2994, 2005
392005
Real-time optical characterization of thin film growth
N Dietz
Materials Science and Engineering: B 87 (1), 1-22, 2001
382001
Heteroepitaxy of lattice‐matched compound semiconductors on silicon
KJ Bachmann, N Dietz, AE Miller, D Venables, JT Kelliher
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 …, 1995
351995
Real-time monitoring of heteroepitaxial growth processes on the silicon (001) surface by p-polarized reflectance spectroscopy
KJ Bachmann, U Rossow, N Dietz
Materials Science and Engineering: B 35 (1-3), 472-478, 1995
331995
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