| Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy OH Nam, MD Bremser, TS Zheleva, RF Davis Applied Physics Letters 71 (18), 2638-2640, 1997 | 861 | 1997 |
| Dislocation density reduction via lateral epitaxy in selectively grown GaN structures TS Zheleva, OH Nam, MD Bremser, RF Davis Applied Physics Letters 71 (17), 2472-2474, 1997 | 684 | 1997 |
| Epitaxial growth of TiN films on (100) silicon substrates by laser physical vapor deposition J Narayan, P Tiwari, X Chen, J Singh, R Chowdhury, T Zheleva Applied physics letters 61 (11), 1290-1292, 1992 | 339 | 1992 |
| Gallium nitride semiconductor structures including a lateral gallium nitride layer that extends from an underlying gallium nitride layer RF Davis, OH Nam, T Zheleva, MD Bremser US Patent 6,051,849, 2000 | 297 | 2000 |
| Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films TS Zheleva, SA Smith, DB Thomson, KJ Linthicum, P Rajagopal, ... Journal of Electronic materials 28 (4), 5-8, 1999 | 217 | 1999 |
| Transition layers at the SiO2∕ SiC interface T Zheleva, A Lelis, G Duscher, F Liu, I Levin, M Das Applied Physics Letters 93 (2), 2008 | 204 | 2008 |
| Epitaxial growth in large‐lattice‐mismatch systems T Zheleva, K Jagannadham, J Narayan Journal of Applied Physics 75 (2), 860-871, 1994 | 186 | 1994 |
| Pendeo-epitaxy-A new approach for lateral growth of gallium nitride structures TS Zheleva, SA Smith, DB Thomson, T Gehrke, KJ Linthicum, ... MRS Online Proceedings Library (OPL) 537, G3. 38, 1998 | 159 | 1998 |
| Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby T Zheleva, DB Thomson, SA Smith, KJ Linthicum, T Gehrke, RF Davis US Patent 6,265,289, 2001 | 149 | 2001 |
| Deposition factors and band gap of zinc-blende AlN MP Thompson, GW Auner, TS Zheleva, KA Jones, SJ Simko, JN Hilfiker Journal of Applied Physics 89 (6), 3331-3336, 2001 | 147 | 2001 |
| Growth, doping and characterization of AlxGa1− xN thin film alloys on 6H-SiC (0001) substrates MD Bremser, WG Perry, T Zheleva, NV Edwards, OH Nam, N Parikh, ... Materials Research Society Internet Journal of Nitride Semiconductor …, 1996 | 142 | 1996 |
| Sublimation growth and characterization of bulk aluminum nitride single crystals CM Balkaş, Z Sitar, T Zheleva, L Bergman, R Nemanich, RF Davis Journal of crystal growth 179 (3-4), 363-370, 1997 | 120 | 1997 |
| Relationship between 4H-SiC∕ SiO2 transition layer thickness and mobility TL Biggerstaff, CL Reynolds, T Zheleva, A Lelis, D Habersat, S Haney, ... Applied Physics Letters 95 (3), 2009 | 118 | 2009 |
| Lateral epitaxial overgrowth of GaN films on SiO 2 areas via metalorganic vapor phase epitaxy OH Nam, TS Zheleva, MD Bremser, RF Davis Journal of electronic materials 27 (4), 233-237, 1998 | 118 | 1998 |
| Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC (0001) substrates WG Perry, T Zheleva, MD Bremser, RF Davis, W Shan, JJ Song Journal of electronic materials 26 (3), 224-231, 1997 | 114 | 1997 |
| Lateral epitaxy and dislocation density reduction in selectively grown GaN structures TS Zheleva, OH Nam, WM Ashmawi, JD Griffin, RF Davis Journal of Crystal Growth 222 (4), 706-718, 2001 | 100 | 2001 |
| Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization RF Davis, T Gehrke, KJ Linthicum, TS Zheleva, EA Preble, P Rajagopal, ... Journal of crystal growth 225 (2-4), 134-140, 2001 | 88 | 2001 |
| Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches T Zheleva, DB Thomson, SA Smith, KJ Linthicum, T Gehrke, RF Davis US Patent 7,195,993, 2007 | 76 | 2007 |
| Methods of fabricating gallium nitride semiconductor layers by lateral overgrowth RF Davis, OH Nam, T Zheleva, MD Bremser US Patent 6,602,763, 2003 | 74 | 2003 |
| The formation of crystalline defects and crystal growth mechanism in InxGa1− xN/GaN heterostructure grown by metalorganic vapor phase epitaxy Y Kawaguchi, M Shimizu, M Yamaguchi, K Hiramatsu, N Sawaki, W Taki, ... Journal of crystal growth 189, 24-28, 1998 | 71 | 1998 |
Okhyun NamTU KOREA (Tech University of Korea)Verified email at tukorea.ac.kr
