| Two-dimensional MoS2-enabled flexible rectenna for Wi-Fi-band wireless energy harvesting X Zhang, J Grajal, JL Vazquez-Roy, U Radhakrishna, X Wang, W Chern, ... Nature 566 (7744), 368-372, 2019 | 366 | 2019 |
| Nonlithographic patterning and metal-assisted chemical etching for manufacturing of tunable light-emitting silicon nanowire arrays W Chern, K Hsu, IS Chun, BP Azeredo, N Ahmed, KH Kim, J Zuo, N Fang, ... Nano letters 10 (5), 1582-1588, 2010 | 274 | 2010 |
| Formation of high aspect ratio GaAs nanostructures with metal-assisted chemical etching M DeJarld, JC Shin, W Chern, D Chanda, K Balasundaram, JA Rogers, ... Nano letters 11 (12), 5259-5263, 2011 | 179 | 2011 |
| Trap assisted tunneling and its effect on subthreshold swing of tunnel FETs RN Sajjad, W Chern, JL Hoyt, DA Antoniadis IEEE Transactions on Electron Devices 63 (11), 4380-4387, 2016 | 131 | 2016 |
| Experimental study of design parameters in silicon micropillar array solar cells produced by soft lithography and metal-assisted chemical etching JC Shin, D Chanda, W Chern, KJ Yu, JA Rogers, X Li IEEE Journal of photovoltaics 2 (2), 129-133, 2012 | 67 | 2012 |
| Ultrathin Strained-Ge Channel P-MOSFETs With High-/Metal Gate and Sub-1-nm Equivalent Oxide Thickness P Hashemi, W Chern, HS Lee, JT Teherani, Y Zhu, J Gonsalvez, ... IEEE electron device letters 33 (7), 943-945, 2012 | 60 | 2012 |
| Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates JT Teherani, W Chern, DA Antoniadis, JL Hoyt, L Ruiz, CD Poweleit, ... Physical Review B—Condensed Matter and Materials Physics 85 (20), 205308, 2012 | 54 | 2012 |
| Antiferroelectric negative capacitance from a structural phase transition in zirconia M Hoffmann, Z Wang, N Tasneem, A Zubair, PV Ravindran, M Tian, ... Nature communications 13 (1), 1228, 2022 | 41 | 2022 |
| Auger generation as an intrinsic limit to tunneling field-effect transistor performance JT Teherani, S Agarwal, W Chern, PM Solomon, E Yablonovitch, ... Journal of Applied Physics 120 (8), 2016 | 32 | 2016 |
| High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ... 2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012 | 32 | 2012 |
| Cryogenic characterization of a ferroelectric field-effect-transistor Z Wang, H Ying, W Chern, S Yu, M Mourigal, JD Cressler, AI Khan Applied Physics Letters 116 (4), 2020 | 31 | 2020 |
| The impacts of ferroelectric and interfacial layer thicknesses on ferroelectric FET design N Tasneem, MM Islam, Z Wang, H Chen, J Hur, D Triyoso, S Consiglio, ... IEEE Electron Device Letters 42 (8), 1156-1159, 2021 | 28 | 2021 |
| Method of forming an array of high aspect ratio semiconductor nanostructures X Li, PM Ferreira, W Chern, IS Chun, KH HSU US Patent 8,980,656, 2015 | 27 | 2015 |
| Experimental demonstration and modeling of a ferroelectric gate stack with a tunnel dielectric insert for NAND applications D Das, H Park, Z Wang, C Zhang, PV Ravindran, C Park, N Afroze, ... 2023 International Electron Devices Meeting (IEDM), 1-4, 2023 | 24 | 2023 |
| Metal assisted chemical etching to produce III-V semiconductor nanostructures X Li, MT Dejarld, JC Shin, W Chern US Patent 8,951,430, 2015 | 24 | 2015 |
| Temperature effects on gated silicon field emission array performance R Bhattacharya, N Karaulac, W Chern, AI Akinwande, J Browning Journal of Vacuum Science & Technology B 39 (2), 2021 | 23 | 2021 |
| Standby bias improvement of read after write delay in ferroelectric field effect transistors Z Wang, N Tasneem, J Hur, H Chen, S Yu, W Chern, A Khan 2021 IEEE International Electron Devices Meeting (IEDM), 19.3. 1-19.3. 4, 2021 | 20 | 2021 |
| BP d. Azeredo, N. Ahmed, K W Chern, K Hsu, IS Chun H. Kim, J.-M. Zuo, N. Fang, P. Ferreira, and X. Li,“Nonlithographic …, 2010 | 19 | 2010 |
| Trap capture and emission dynamics in ferroelectric field-effect transistors and their impact on device operation and reliability N Tasneem, Z Wang, Z Zhao, N Upadhyay, S Lombardo, H Chen, J Hur, ... 2021 IEEE International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2021 | 18 | 2021 |
| Ultraviolet light stimulated water desorption effect on emission performance of gated field emitter array R Bhattacharya, N Karaulac, G Rughoobur, W Chern, AI Akinwande, ... Journal of Vacuum Science & Technology B 39 (3), 2021 | 18 | 2021 |
