Follow
Hogyoung Kim
Title
Cited by
Cited by
Year
Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography
P Deb, H Kim, V Rawat, M Oliver, S Kim, M Marshall, E Stach, T Sands
Nano Letters 5 (9), 1847-1851, 2005
1292005
GaN nanorod Schottky and p− n junction diodes
P Deb, H Kim, Y Qin, R Lahiji, M Oliver, R Reifenberger, T Sands
Nano letters 6 (12), 2893-2898, 2006
1092006
Transfer printed flexible and stretchable thin film solar cells using a water-soluble sacrificial layer
J Nam, Y Lee, W Choi, CS Kim, H Kim, J Kim, DH Kim, S Jo
Advanced Energy Materials, 2016
552016
Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching junctions
E Lee, M Gwon, DW Kim, H Kim
Applied Physics Letters 98 (13), 132905, 2011
422011
Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells
HK Kang, SH Park, DH Jun, CZ Kim, KM Song, W Park, CG Ko, H Kim
Semiconductor science and technology 26 (7), 075009, 2011
352011
A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells
W Choi, CZ Kim, CS Kim, W Heo, T Joo, SY Ryu, H Kim, H Kim, HK Kang, ...
Advanced Energy Materials 4 (16), 1400589, 2014
332014
Current transport in Pt Schottky contacts to a-plane n-type GaN
SH Phark, H Kim, KM Song, PG Kang, HS Shin, DW Kim
Journal of Physics D: Applied Physics 43 (16), 165102, 2010
332010
Silver Schottky contacts to -plane bulk ZnO
H Kim, H Kim, DW Kim
Journal of Applied Physics 108 (7), 074514, 2010
322010
Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes
H Kim, H Kim, DW Kim
Vacuum 101, 92-97, 2014
272014
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
H Kim, HJ Yoon, BJ Choi
Nanoscale Research Letters 13, 232, 2018
162018
Improved interfacial properties of thermal atomic layer deposited AlN on GaN
H Kim, ND Kim, SC An, HJ Yoon, BJ Choi
Vacuum 159, 379, 2019
152019
Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells
Y Cho, E Lee, DW Kim, S Ahn, GY Jeong, J Gwak, JH Yun, H Kim
Current Applied Physics 13 (1), 37-40, 2013
142013
Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction
CZ Kim, H Kim, KM Song, DH Jun, HK Kang, W Park, CG Ko
Microelectronic engineering 87 (4), 677-681, 2010
142010
Properties of Si-doped a-plane GaN grown with different SiH4 flow rates
KM Song, CZ Kim, JM Kim, DH Yoon, SM Hwang, H Kim
Japanese Journal of Applied Physics 50 (5R), 055502, 2011
132011
Ink for forming thin film of solar cells and method for preparing the same, CIGS thin film solar cell using the same and manufacturing method thereof
YH Choe, YH Lee, YW Choi, HS Kim, HG Kim
US Patent App. 12/081,238, 2010
132010
High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN
HG Kim, P Deb, T Sands
IEEE Transactions on Electron Devices 53 (10), 2448-2453, 2006
132006
Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN
HG Kim, SH Kim, P Deb, T Sands
Journal of electronic materials 35 (1), 107-112, 2006
122006
Nanopatterned contacts to GaN
HG Kim, P Deb, T Sands
Journal of electronic materials 36 (4), 359-367, 2007
112007
White light emission of monolithic InGaN/GaN grown on morphology-controlled, nanostructured GaN templates
KM Song, DH Kim, JM Kim, CY Cho, J Choi, K Kim, J Park, H Kim
Nanotechnology 28, 225703, 2017
102017
Au/n-InP Schottky Diodes Using Al2O3 Interfacial layer grown by atomic layer deposition
H Kim, MS Kim, SY Yoon, BJ Choi
Semiconductor Science and Technology 32, 2017
102017
The system can't perform the operation now. Try again later.
Articles 1–20