팔로우
Hogyoung Kim
제목
인용
인용
연도
Faceted and vertically aligned GaN nanorod arrays fabricated without catalysts or lithography
P Deb, H Kim, V Rawat, M Oliver, S Kim, M Marshall, E Stach, T Sands
Nano Letters 5 (9), 1847-1851, 2005
1322005
GaN nanorod Schottky and p− n junction diodes
P Deb, H Kim, Y Qin, R Lahiji, M Oliver, R Reifenberger, T Sands
Nano letters 6 (12), 2893-2898, 2006
1142006
Transfer printed flexible and stretchable thin film solar cells using a water-soluble sacrificial layer
J Nam, Y Lee, W Choi, CS Kim, H Kim, J Kim, DH Kim, S Jo
Advanced Energy Materials 6, 1601269, 2016
692016
A Repeatable Epitaxial Lift‐Off Process from a Single GaAs Substrate for Low‐Cost and High‐Efficiency III‐V Solar Cells
W Choi, CZ Kim, CS Kim, W Heo, T Joo, SY Ryu, H Kim, H Kim, HK Kang, ...
Advanced Energy Materials 4 (16), 1400589, 2014
482014
Resistance state-dependent barrier inhomogeneity and transport mechanisms in resistive-switching Pt/SrTiO3 junctions
E Lee, M Gwon, DW Kim, H Kim
Applied Physics Letters 98 (13), 2011
472011
Te doping in the GaAs tunnel junction for GaInP/GaAs tandem solar cells
HK Kang, SH Park, DH Jun, CZ Kim, KM Song, W Park, CG Ko, H Kim
Semiconductor science and technology 26 (7), 075009, 2011
422011
Current transport in Pt Schottky contacts to a-plane n-type GaN
SH Phark, H Kim, KM Song, PG Kang, HS Shin, DW Kim
Journal of Physics D: Applied Physics 43 (16), 165102, 2010
352010
Silver Schottky contacts to a-plane bulk ZnO
H Kim, H Kim, DW Kim
Journal of Applied Physics 108 (7), 2010
342010
Effect of oxygen plasma treatment on the electrical properties in Ag/bulk ZnO Schottky diodes
H Kim, H Kim, DW Kim
Vacuum 101, 92-97, 2014
282014
Improved interfacial properties of thermal atomic layer deposited AlN on GaN
H Kim, ND Kim, SC An, HJ Yoon, BJ Choi
Vacuum 159, 379, 2019
242019
Growth of Al-rich AlGaN thin films by purely thermal atomic layer deposition
S Choi, A Ansari, H Yun, H Kim, B Shong, B Choi
Journal of Alloys and Compounds 854, 157186, 2021
192021
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN
H Kim, HJ Yoon, BJ Choi
Nanoscale Research Letters 13, 232, 2018
182018
Nucleation and growth behavior of aluminum nitride film using thermal atomic layer deposition
HJ Yun, H Kim, BJ Choi
Ceramics International, 2020
172020
Control and understanding of metal contacts to β-Ga2O3 single crystals: a review
H Kim
SN Applied Sciences 4, 27, 2022
152022
Enhanced efficiency in GaInP/GaAs tandem solar cells using carbon doped GaAs in tunnel junction
CZ Kim, H Kim, KM Song, DH Jun, HK Kang, W Park, CG Ko
Microelectronic engineering 87 (4), 677-681, 2010
152010
Influence of shunt conduction on determining the dominant recombination processes in CIGS thin-film solar cells
Y Cho, E Lee, DW Kim, S Ahn, GY Jeong, J Gwak, JH Yun, H Kim
Current Applied Physics 13 (1), 37-40, 2013
142013
Properties of Si-doped a-plane GaN grown with different SiH4 flow rates
KM Song, CZ Kim, JM Kim, DH Yoon, SM Hwang, H Kim
Japanese Journal of Applied Physics 50 (5R), 055502, 2011
142011
Reactive ion etching damage in n-GaN and its recovery by post-etch treatment
H Kim
Electronics Letters 44 (17), 1037-1039, 2008
142008
High-reflectivity Al-Pt nanostructured Ohmic contact to p-GaN
HG Kim, P Deb, T Sands
IEEE Transactions on Electron Devices 53 (10), 2448-2453, 2006
142006
Effect of KOH treatment on the Schottky barrier height and reverse leakage current in Pt/n-GaN
HG Kim, SH Kim, P Deb, T Sands
Journal of electronic materials 35, 107-112, 2006
142006
현재 시스템이 작동되지 않습니다. 나중에 다시 시도해 주세요.
학술자료 1–20