e. garfunkel
e. garfunkel
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Cited by
Evolution of electrical, chemical, and structural properties of transparent and conducting chemically derived graphene thin films
C Mattevi, G Eda, S Agnoli, S Miller, KA Mkhoyan, O Celik, ...
Advanced functional materials 19 (16), 2577-2583, 2009
Ultrathin (<4 nm) and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
ML Green, EP Gusev, R Degraeve, EL Garfunkel
Journal of Applied Physics 90 (5), 2057-2121, 2001
Electrolyte design for LiF-rich solid–electrolyte interfaces to enable high-performance microsized alloy anodes for batteries
J Chen, X Fan, Q Li, H Yang, MR Khoshi, Y Xu, S Hwang, L Chen, X Ji, ...
Nature Energy 5 (5), 386-397, 2020
Photochemical water oxidation by crystalline polymorphs of manganese oxides: structural requirements for catalysis
DM Robinson, YB Go, M Mui, G Gardner, Z Zhang, D Mastrogiovanni, ...
Journal of the American chemical Society 135 (9), 3494-3501, 2013
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3
ML Huang, YC Chang, CH Chang, YJ Lee, P Chang, J Kwo, TB Wu, ...
Applied Physics Letters 87 (25), 2005
HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition
MM Frank, GD Wilk, D Starodub, T Gustafsson, E Garfunkel, YJ Chabal, ...
Applied Physics Letters 86 (15), 2005
Intermixing at the tantalum oxide/silicon interface in gate dielectric structures
GB Alers, DJ Werder, Y Chabal, HC Lu, EP Gusev, E Garfunkel, ...
Applied Physics Letters 73 (11), 1517-1519, 1998
Ultrathin HfO2 films grown on silicon by atomic layer deposition for advanced gate dielectrics applications
EP Gusev, C Cabral Jr, M Copel, C D’emic, M Gribelyuk
Microelectronic Engineering 69 (2-4), 145-151, 2003
Instability, intermixing and electronic structure at the epitaxial LaAlO3/SrTiO3 (001) heterojunction
SA Chambers, MH Engelhard, V Shutthanandan, Z Zhu, TC Droubay, ...
Surface Science Reports 65 (10-12), 317-352, 2010
Band offsets of ultrathin high- oxide films with Si
E Bersch, S Rangan, RA Bartynski, E Garfunkel, E Vescovo
Physical review B 78 (8), 085114, 2008
Titanium and reduced titania overlayers on titanium dioxide (110)
JT Mayer, U Diebold, TE Madey, E Garfunkel
Journal of Electron Spectroscopy and Related Phenomena 73 (1), 1-11, 1995
Profiling nitrogen in ultrathin silicon oxynitrides with angle-resolved x-ray photoelectron spectroscopy
JP Chang, ML Green, VM Donnelly, RL Opila, J Eng Jr, J Sapjeta, ...
Journal of Applied Physics 87 (9), 4449-4455, 2000
TiO2 by XPS
U Diebold, TE Madey
Surface Science Spectra 4 (3), 227-231, 1996
P-doped porous carbon as metal free catalysts for selective aerobic oxidation with an unexpected mechanism
MA Patel, F Luo, MR Khoshi, E Rabie, Q Zhang, CR Flach, R Mendelsohn, ...
Acs Nano 10 (2), 2305-2315, 2016
High temperature stability in lanthanum and zirconia-based gate dielectrics
JP Maria, D Wicaksana, AI Kingon, B Busch, H Schulte, E Garfunkel, ...
Journal of applied physics 90 (7), 3476-3482, 2001
Growth and characterization of ultrathin nitrided silicon oxide films
EP Gusev, HC Lu, EL Garfunkel, T Gustafsson, ML Green
IBM journal of research and development 43 (3), 265-286, 1999
The coadsorption of potassium and CO on the pt (111) crystal surface: A TDS, HREELS and UPS study
JE Crowell, EL Garfunkel, GA Somorjai
Surface Science 121 (2), 303-320, 1982
Growth mechanism of thin silicon oxide films on Si (100) studied by medium-energy ion scattering
EP Gusev, HC Lu, T Gustafsson, E Garfunkel
Physical Review B 52 (3), 1759, 1995
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