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pk hurley
pk hurley
Tyndall National Institute, University College Cork
Verified email at tyndall.ie
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Cited by
Cited by
Year
Design principles for maximizing photovoltage in metal-oxide-protected water-splitting photoanodes
AG Scheuermann, JP Lawrence, KW Kemp, T Ito, A Walsh, CED Chidsey, ...
Nature materials 15 (1), 99-105, 2016
2422016
Nanocrystalline TiO2 films studied by optical, XRD and FTIR spectroscopy
JY Zhang, IW Boyd, BJ O'sullivan, PK Hurley, PV Kelly, JP Senateur
Journal of Non-Crystalline Solids 303 (1), 134-138, 2002
2152002
Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates
B Shin, JR Weber, RD Long, PK Hurley, CG Van de Walle, PC McIntyre
Applied physics letters 96 (15), 2010
1922010
A systematic study of (NH4) 2S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0. 53Ga0. 47As/InP system for n-type and p-type In0. 53Ga0. 47As…
O’Connor, B Brennan, V Djara, K Cherkaoui, S Monaghan, ...
Journal of Applied Physics 109 (2), 2011
1692011
Wide spectral photoresponse of layered platinum diselenide-based photodiodes
C Yim, N McEvoy, S Riazimehr, DS Schneider, F Gity, S Monaghan, ...
Nano Letters 18 (3), 1794-1800, 2018
1682018
Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
O Engstrm, B Raeissi, S Hall, O Buiu, MC Lemme, HDB Gottlob, ...
Solid-State Electronics 51 (4), 622-626, 2007
1622007
Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2
G Mirabelli, C McGeough, M Schmidt, EK McCarthy, S Monaghan, ...
Journal of Applied Physics 120 (12), 2016
1612016
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
1542009
Temperature and frequency dependent electrical characterization of HfO2/InxGa1− xAs interfaces using capacitance-voltage and conductance methods
O’Connor, S Monaghan, RD Long, A O’Mahony, IM Povey, K Cherkaoui, ...
Applied Physics Letters 94 (10), 2009
1302009
interface properties following rapid thermal processing
BJ O’sullivan, PK Hurley, C Leveugle, JH Das
Journal of Applied Physics 89 (7), 3811-3820, 2001
982001
Electrical, structural, and chemical properties of HfO2 films formed by electron beam evaporation
K Cherkaoui, S Monaghan, MA Negara, M Modreanu, PK Hurley, ...
Journal of Applied Physics 104 (6), 2008
822008
Evaluation of border traps and interface traps in HfO2/MoS2 gate stacks by capacitance–voltage analysis
P Zhao, A Khosravi, A Azcatl, P Bolshakov, G Mirabelli, E Caruso, ...
2D Materials 5 (3), 031002, 2018
782018
Investigation of TiO2-doped HfO2 thin films deposited by photo-CVD
Q Fang, JY Zhang, ZM Wang, JX Wu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 428 (1-2), 263-268, 2003
782003
Interface of ultrathin HfO2 films deposited by UV-photo-CVD
Q Fang, JY Zhang, Z Wang, M Modreanu, BJ O'Sullivan, PK Hurley, ...
Thin Solid Films 453, 203-207, 2004
772004
In situ H2S passivation of In0. 53Ga0. 47As∕ InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric
E O’Connor, RD Long, K Cherkaoui, KK Thomas, F Chalvet, IM Povey, ...
Applied Physics Letters 92 (2), 2008
742008
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe2 films grown at 400 C
L Ansari, S Monaghan, N McEvoy, C Coilein, CP Cullen, J Lin, R Siris, ...
npj 2D Materials and Applications 3 (1), 33, 2019
732019
Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
P Bolshakov, P Zhao, A Azcatl, PK Hurley, RM Wallace, CD Young
Applied Physics Letters 111 (3), 2017
672017
An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
J Lin, YY Gomeniuk, S Monaghan, IM Povey, K Cherkaoui, O'Connor, ...
Journal of Applied Physics 114 (14), 2013
662013
Structural and electrical analysis of the atomic layer deposition of HfO2/n-In0. 53Ga0. 47As capacitors with and without an Al2O3 interface control layer
A O’Mahony, S Monaghan, G Provenzano, IM Povey, MG Nolan, ...
Applied Physics Letters 97 (5), 2010
622010
Interface Defects in HfO2, LaSiO x, and Gd2O3 High-k/Metal–Gate Structures on Silicon
PK Hurley, K Cherkaoui, E O’connor, MC Lemme, HDB Gottlob, ...
Journal of The Electrochemical Society 155 (2), G13, 2007
622007
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