Christopher Hinkle
Christopher Hinkle
University of Notre Dame, Electrical Engineering
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Defect-Dominated Doping and Contact Resistance in MoS2
S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle
ACS nano 8 (3), 2880-2888, 2014
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 071901, 2008
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 162101, 2009
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ...
Nano letters 16 (9), 5437-5443, 2016
Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces
R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ...
ACS nano 9 (9), 9124-9133, 2015
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
Half-cycle atomic layer deposition reaction studies of on (100) surfaces
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (20), 202902, 2008
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...
ACS nano 9 (1), 474-480, 2015
Bandgap engineering of two-dimensional semiconductor materials
A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ...
npj 2D Materials and Applications 4 (1), 1-21, 2020
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science 362 (6415), 665-670, 2018
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
CL Hinkle, EM Vogel, PD Ye, RM Wallace
Current Opinion in Solid State and Materials Science 15 (5), 188-207, 2011
A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
Investigation of postoxidation thermal treatments of interface in relationship to the kinetics of amorphous Si suboxide decomposition
BJ Hinds, F Wang, DM Wolfe, CL Hinkle, G Lucovsky
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
Half-cycle atomic layer deposition reaction studies of on passivated GaAs(100) surfaces
M Milojevic, CL Hinkle, FS Aguirre-Tostado, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (25), 252905, 2008
van der Waals epitaxy: 2D materials and topological insulators
LA Walsh, CL Hinkle
Applied Materials Today 9, 504-515, 2017
Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace
The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016
Frequency dispersion reduction and bond conversion on -type GaAs by in situ surface oxide removal and passivation
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 91 (16), 163512, 2007
Progression of solid electrolyte interphase formation on hydrogenated amorphous silicon anodes for lithium-ion batteries
DE Arreaga-Salas, AK Sra, K Roodenko, YJ Chabal, CL Hinkle
The Journal of Physical Chemistry C 116 (16), 9072-9077, 2012
MoS2–Titanium Contact Interface Reactions
S McDonnell, C Smyth, CL Hinkle, RM Wallace
ACS applied materials & interfaces 8 (12), 8289-8294, 2016
Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon
LF Edge, DG Schlom, RT Brewer, YJ Chabal, JR Williams, SA Chambers, ...
Applied physics letters 84 (23), 4629-4631, 2004
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