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Christopher Hinkle
Christopher Hinkle
University of Notre Dame, Electrical Engineering
nd.edu의 이메일 확인됨
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Defect-Dominated Doping and Contact Resistance in MoS2
S McDonnell, R Addou, C Buie, RM Wallace, CL Hinkle
ACS nano 8 (3), 2880-2888, 2014
8632014
Bandgap engineering of two-dimensional semiconductor materials
A Chaves, JG Azadani, H Alsalman, DR Da Costa, R Frisenda, AJ Chaves, ...
npj 2D Materials and Applications 4 (1), 29, 2020
6622020
GaAs interfacial self-cleaning by atomic layer deposition
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 92 (7), 2008
4912008
Covalent Nitrogen Doping and Compressive Strain in MoS2 by Remote N2 Plasma Exposure
A Azcatl, X Qin, A Prakash, C Zhang, L Cheng, Q Wang, N Lu, MJ Kim, ...
Nano letters 16 (9), 5437-5443, 2016
3932016
Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
CL Hinkle, M Milojevic, B Brennan, AM Sonnet, FS Aguirre-Tostado, ...
Applied Physics Letters 94 (16), 2009
3152009
HfO2 on MoS2 by Atomic Layer Deposition: Adsorption Mechanisms and Thickness Scalability
S McDonnell, B Brennan, A Azcatl, N Lu, H Dong, C Buie, J Kim, ...
ACS nano 7 (11), 10354-10361, 2013
3032013
Impurities and Electronic Property Variations of Natural MoS2 Crystal Surfaces
R Addou, S McDonnell, D Barrera, Z Guo, A Azcatl, J Wang, H Zhu, ...
ACS nano 9 (9), 9124-9133, 2015
2982015
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
J Shim, SH Bae, W Kong, D Lee, K Qiao, D Nezich, YJ Park, R Zhao, ...
Science 362 (6415), 665-670, 2018
2652018
A roadmap for electronic grade 2D materials
N Briggs, S Subramanian, Z Lin, X Li, X Zhang, K Zhang, K Xiao, ...
2D Materials 6 (2), 022001, 2019
2512019
HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
R Yue, AT Barton, H Zhu, A Azcatl, LF Pena, J Wang, X Peng, N Lu, ...
ACS nano 9 (1), 474-480, 2015
2302015
van der Waals epitaxy: 2D materials and topological insulators
LA Walsh, CL Hinkle
Applied Materials Today 9, 504-515, 2017
1912017
Half-cycle atomic layer deposition reaction studies of Al2O3 on In0. 2Ga0. 8As (100) surfaces
M Milojevic, FS Aguirre-Tostado, CL Hinkle, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (20), 2008
1902008
Interfacial chemistry of oxides on InxGa (1− x) As and implications for MOSFET applications
CL Hinkle, EM Vogel, PD Ye, RM Wallace
Current Opinion in Solid State and Materials Science 15 (5), 188-207, 2011
1592011
Contact Metal–MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
CM Smyth, R Addou, S McDonnell, CL Hinkle, RM Wallace
The Journal of Physical Chemistry C 120 (27), 14719-14729, 2016
1552016
MoS2–Titanium Contact Interface Reactions
S McDonnell, C Smyth, CL Hinkle, RM Wallace
ACS applied materials & interfaces 8 (12), 8289-8294, 2016
1522016
Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides
R Yue, Y Nie, LA Walsh, R Addou, C Liang, N Lu, AT Barton, H Zhu, ...
2D Materials 4 (4), 045019, 2017
1432017
Investigation of postoxidation thermal treatments of interface in relationship to the kinetics of amorphous Si suboxide decomposition
BJ Hinds, F Wang, DM Wolfe, CL Hinkle, G Lucovsky
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
1371998
Half-cycle atomic layer deposition reaction studies of Al2O3 on (NH4) 2S passivated GaAs (100) surfaces
M Milojevic, CL Hinkle, FS Aguirre-Tostado, HC Kim, EM Vogel, J Kim, ...
Applied Physics Letters 93 (25), 2008
1332008
Progression of solid electrolyte interphase formation on hydrogenated amorphous silicon anodes for lithium-ion batteries
DE Arreaga-Salas, AK Sra, K Roodenko, YJ Chabal, CL Hinkle
The Journal of Physical Chemistry C 116 (16), 9072-9077, 2012
1322012
Frequency dispersion reduction and bond conversion on n-type GaAs by in situ surface oxide removal and passivation
CL Hinkle, AM Sonnet, EM Vogel, S McDonnell, GJ Hughes, M Milojevic, ...
Applied Physics Letters 91 (16), 2007
1272007
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