| Transferred via contacts as a platform for ideal two-dimensional transistors Y Jung, MS Choi, A Nipane, A Borah, B Kim, A Zangiabadi, T Taniguchi, ... Nature Electronics 2 (5), 187-194, 2019 | 279 | 2019 |
| Electrical characterization of 2D materials-based field-effect transistors SB Mitta, MS Choi, A Nipane, F Ali, C Kim, JT Teherani, J Hone, WJ Yoo 2D Materials 8 (1), 012002, 2020 | 185 | 2020 |
| High carrier mobility in graphene doped using a monolayer of tungsten oxyselenide MS Choi, A Nipane, BSY Kim, ME Ziffer, I Datta, A Borah, Y Jung, B Kim, ... Nature Electronics 4 (10), 731-739, 2021 | 71 | 2021 |
| Engineering the electron–hole bilayer tunneling field-effect transistor S Agarwal, JT Teherani, JL Hoyt, DA Antoniadis, E Yablonovitch IEEE Transactions on Electron Devices 61 (5), 1599-1606, 2014 | 70 | 2014 |
| Absence of a Band Gap at Metal-Monolayer MoS2 Interface A Kerelsky, A Nipane, D Edelberg, D Wang, X Zhou, A Dadgar, H Gao, ... arXiv preprint arXiv:1705.08478, 2017 | 62* | 2017 |
| Ultrathin Strained-Ge Channel P-MOSFETs With High-K/Metal Gate and Sub-1-nm Equivalent Oxide Thickness O Hashemi, W Chern, H Lee, JT Teherani, Y Zhu, J Gonsalvez, ... Electron Device Letters, IEEE 33 (7), 943-945, 2012 | 61 | 2012 |
| Resonant tunnelling diodes based on twisted black phosphorus homostructures PK Srivastava, Y Hassan, DJP de Sousa, Y Gebredingle, M Joe, F Ali, ... Nature Electronics 4 (4), 269-276, 2021 | 60 | 2021 |
| Extraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained-Ge type-II heterostructures on relaxed SiGe substrates JT Teherani, W Chern, DA Antoniadis, JL Hoyt, L Ruiz, CD Poweleit, ... Physical Review B—Condensed Matter and Materials Physics 85 (20), 205308, 2012 | 56 | 2012 |
| Electrostatics of lateral pn junctions in atomically thin materials A Nipane, S Jayanti, A Borah, JT Teherani Journal of Applied Physics 122 (19), 2017 | 55 | 2017 |
| Impact of quantization energy and gate leakage in bilayer tunneling transistors JT Teherani, S Agarwal, E Yablonovitch, JL Hoyt, DA Antoniadis IEEE Electron Device Letters 34 (2), 298-300, 2013 | 44 | 2013 |
| The device level modulation of carrier transport in a 2D WSe 2 field effect transistor via a plasma treatment I Moon, S Lee, M Lee, C Kim, D Seol, Y Kim, KH Kim, GY Yeom, ... Nanoscale 11 (37), 17368-17375, 2019 | 41 | 2019 |
| Damage-Free Atomic Layer Etch of WSe2: A Platform for Fabricating Clean Two-Dimensional Devices A Nipane, MS Choi, PJ Sebastian, K Yao, A Borah, P Deshmukh, Y Jung, ... ACS Applied Materials & Interfaces 13 (1), 1930-1942, 2020 | 38 | 2020 |
| In(0.53)Ga(0.47)As/GaAs(0.5)Sb(0.5) Quantum-Well Tunnel-FETs With Tunable Backward Diode Characteristics T Yu, JT Teherani, DA Antoniadis, JL Hoyt IEEE Electron Device Letters 34 (12), 1503-1505, 2013 | 38* | 2013 |
| High-operating-temperature MWIR detector diodes HF Schaake, MA Kinch, D Chandra, F Aqariden, PK Liao, DF Weirauch, ... Journal of Electronic Materials 37 (9), 1401-1405, 2008 | 36 | 2008 |
| Low-Resistance p-Type Ohmic Contacts to Ultrathin WSe2 by Using a Monolayer Dopant A Borah, A Nipane, MS Choi, J Hone, JT Teherani ACS Applied Electronic Materials 3 (7), 2941-2947, 2021 | 35 | 2021 |
| High mobility high-κ-all-around asymmetrically-strained germanium nanowire trigate p-MOSFETs W Chern, P Hashemi, JT Teherani, T Yu, Y Dong, G Xia, DA Antoniadis, ... 2012 International Electron Devices Meeting, 16.5. 1-16.5. 4, 2012 | 33 | 2012 |
| Auger generation as an intrinsic limit to tunneling field-effect transistor performance JT Teherani, S Agarwal, W Chern, PM Solomon, E Yablonovitch, ... Journal of Applied Physics 120 (8), 2016 | 32 | 2016 |
| Effect of Uniaxial Strain on the Drain Current of a Heterojunction Tunneling Field-Effect Transistor PM Solomon, I Lauer, A Majumdar, JT Teherani, M Luisier, J Cai, ... Electron Device Letters, IEEE 32 (4), 464-466, 2011 | 25 | 2011 |
| Performance and modeling of the MWIR HgCdTe electron avalanche photodiode J Beck, R Scritchfield, B Sullivan, J Teherani, CF Wan, M Kinch, M Ohlson, ... Journal of electronic materials 38 (8), 1579-1592, 2009 | 23 | 2009 |
| Investigation of hole mobility in gate-all-around Si nanowire p-MOSFETs with high-к/metal-gate: effects of hydrogen thermal annealing and nanowire shape P Hashemi, JT Teherani, JL Hoyt 2010 International Electron Devices Meeting, 34.5. 1-34.5. 4, 2010 | 20 | 2010 |
Ankur NipaneIntel CorporationVerified email at intel.com
