|High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays|
W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ...
ACS nano 6 (9), 8166-8172, 2012
|Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering|
A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang
IEEE Electron Device Letters 36 (1), 32-34, 2014
|Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays|
W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ...
2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012
|Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode|
E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ...
2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013
|Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications|
S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012
|Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application|
E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang
Applied Physics Letters 108 (15), 153502, 2016
|Multi-layered NiO y/NbO x/NiO y fast drift-free threshold switch with high I on/I off ratio for selector application|
J Park, T Hadamek, AB Posadas, E Cha, AA Demkov, H Hwang
Scientific reports 7 (1), 1-8, 2017
|Complementary resistive switching in niobium oxide-based resistive memory devices|
X Liu, SM Sadaf, S Park, S Kim, E Cha, D Lee, GY Jung, H Hwang
IEEE electron device letters 34 (2), 235-237, 2013
|High density neuromorphic system with Mo/Pr0. 7Ca0. 3MnO3 synapse and NbO2 IMT oscillator neuron|
K Moon, E Cha, J Park, S Gi, M Chu, K Baek, B Lee, S Oh, H Hwang
2015 IEEE International Electron Devices Meeting (IEDM), 17.6. 1-17.6. 4, 2015
|Structurally engineered stackable and scalable 3D titanium‐oxide switching devices for high‐density nanoscale memory|
D Lee, J Park, J Park, J Woo, E Cha, S Lee, K Moon, J Song, Y Koo, ...
Advanced Materials 27 (1), 59-64, 2015
|Quantized conductive filament formed by limited Cu source in sub-5nm era|
J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ...
2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011
|Bidirectional threshold switching in engineered multilayer (Cu2O/Ag:Cu2O/Cu2O) stack for cross-point selector application|
J Song, A Prakash, D Lee, J Woo, E Cha, S Lee, H Hwang
Applied Physics Letters 107 (11), 113504, 2015
|Highly uniform and reliable resistance switching properties in bilayer WOx/NbOx RRAM devices|
SM Sadaf, X Liu, M Son, S Park, SH Choudhury, E Cha, M Siddik, J Shin, ...
physica status solidi (a) 209 (6), 1179-1183, 2012
|Dynamics of electroforming and electrically driven insulator-metal transition in NbOx selector|
J Park, E Cha, I Karpov, H Hwang
Applied Physics Letters 108 (23), 232101, 2016
|Multi-layer tunnel barrier (Ta2O5/TaOx/TiO2) engineering for bipolar RRAM selector applications|
J Woo, W Lee, S Park, S Kim, D Lee, G Choi, E Cha, J hyun Lee, ...
2013 Symposium on VLSI Technology, T168-T169, 2013
|Self‐formed Schottky barrier induced selector‐less RRAM for cross‐point memory applications|
S Park, S Jung, M Siddik, M Jo, J Park, S Kim, W Lee, J Shin, D Lee, ...
physica status solidi (RRL)–Rapid Research Letters 6 (11), 454-456, 2012
|Hardware implementation of associative memory characteristics with analogue-type resistive-switching device|
K Moon, S Park, J Jang, D Lee, J Woo, E Cha, S Lee, J Park, J Song, ...
Nanotechnology 25 (49), 495204, 2014
|Effects of RESET current overshoot and resistance state on reliability of RRAM|
J Song, D Lee, J Woo, Y Koo, E Cha, S Lee, J Park, K Moon, SH Misha, ...
IEEE electron device letters 35 (6), 636-638, 2014
|Analog synapse device with 5-b MLC and improved data retention for neuromorphic system|
K Moon, E Cha, J Park, S Gi, M Chu, K Baek, B Lee, SH Oh, H Hwang
IEEE Electron Device Letters 37 (8), 1067-1070, 2016
|Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments|
W Lee, J Park, S Kim, J Woo, J Shin, D Lee, E Cha, H Hwang
Applied Physics Letters 100 (14), 142106, 2012