| Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning PD Kirsch, P Sivasubramani, J Huang, CD Young, MA Quevedo-Lopez, ... Applied Physics Letters 92 (9), 092901, 2008 | 206 | 2008 |
| Work function engineering using lanthanum oxide interfacial layers HN Alshareef, M Quevedo-Lopez, HC Wen, R Harris, P Kirsch, P Majhi, ... Applied physics letters 89 (23), 232103-232103-3, 2006 | 132 | 2006 |
| Dual work function metal gates using full nickel silicidation of doped poly-Si JH Sim, HC Wen, JP Lu, DL Kwong IEEE Electron Device Letters 24 (10), 631-633, 2003 | 87 | 2003 |
| Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE) BH Lee, CD Young, R Choi, JH Sim, G Bersuker, CY Kang, R Harris, ... Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International …, 2004 | 84 | 2004 |
| In 0.53 Ga 0.47 As based metal oxide semiconductor capacitors with atomic layer deposition ZrO 2 gate oxide demonstrating low gate leakage current and equivalent oxide … S Koveshnikov, N Goel, P Majhi, H Wen, MB Santos, S Oktyabrsky, ... Applied Physics Letters 92 (22), 222904-222904-3, 2008 | 83 | 2008 |
| Origin of the Flatband-Voltage Roll-Off Phenomenon in Metal/High-Gate Stacks G Bersuker, CS Park, HC Wen, K Choi, J Price, P Lysaght, HH Tseng, ... Electron Devices, IEEE Transactions on 57 (9), 2047-2056, 2010 | 77 | 2010 |
| Control and stability of self-assembled monolayers under biosensing conditions O Seitz, PG Fernandes, R Tian, N Karnik, HC Wen, H Stiegler, ... Journal of Materials Chemistry 21 (12), 4384-4392, 2011 | 75 | 2011 |
| Metal gate work function engineering using interfacial layers HN Alshareef, HF Luan, K Choi, HR Harris, HC Wen, MA Quevedo-Lopez, ... Applied physics letters 88 (11), 112114, 2006 | 72 | 2006 |
| Dual-work-function metal gates by full silicidation of Poly-Si with Co-Ni bi-layers J Liu, HC Wen, JP Lu, DL Kwong IEEE electron device letters 26 (4), 228-230, 2005 | 70 | 2005 |
| Growth mechanism of TiN film on dielectric films and the effects on the work function K Choi, P Lysaght, H Alshareef, C Huffman, HC Wen, R Harris, H Luan, ... Thin Solid Films 486 (1), 141-144, 2005 | 64 | 2005 |
| Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes HC Wen, P Majhi, K Choi, CS Park, HN Alshareef, H Rusty Harris, H Luan, ... Microelectronic Engineering 85 (1), 2-8, 2008 | 61 | 2008 |
| Comparison of effective work function extraction methods using capacitance and current measurement techniques HC Wen, R Choi, GA Brown, T BosckeBoscke, K Matthews, HR Harris, ... Electron Device Letters, IEEE 27 (7), 598-601, 2006 | 61 | 2006 |
| Thermally stable N-metal gate MOSFETs using La-incorporated HfSiO dielectric HN Alshareef, HR Harris, HC Wen, CS Park, C Huffman, K Choi, HF Luan, ... VLSI Technology, 2006. Digest of Technical Papers. 2006 Symposium on, 7-8, 2006 | 59 | 2006 |
| The effect of metal thickness, overlayer and high-k surface treatment on the effective work function of metal electrode K Choi, HC Wen, H Alshareef, R Harris, P Lysaght, H Luan, P Majhi, ... Solid-State Device Research Conference, 2005. ESSDERC 2005. Proceedings of …, 2005 | 58 | 2005 |
| Effective work function modification of atomic-layer-deposited-TaN film by capping layer K Choi, HN Alshareef, HC Wen, H Harris, H Luan, Y Senzaki, P Lysaght, ... Applied physics letters 89 (3), 032113, 2006 | 53 | 2006 |
| Composition dependence of the work function of Ta 1-x Al x N y metal gates HN Alshareef, K Choi, HC Wen, H Luan, H Harris, Y Senzaki, P Majhi, ... Applied physics letters 88 (7), 072108-072108-3, 2006 | 50 | 2006 |
| Mechanism of flatband voltage roll-off studied with AlO film deposited on terraced oxide K Choi, HC Wen, G Bersuker, R Harris, BH Lee Applied Physics Letters 93, 133506, 2008 | 43 | 2008 |
| SPICE macromodel of silicon-on-insulator-field-effect-transistor-based biological sensors PG Fernandes, HJ Stiegler, M Zhao, KD Cantley, B Obradovic, ... Sensors and Actuators B: Chemical 161 (1), 163-170, 2012 | 40 | 2012 |
| Three-layer laminated metal gate electrodes with tunable work functions for CMOS applications WP Bai, SH Bae, HC Wen, S Mathew, LK Bera, N Balasubramanian, ... IEEE electron device letters 26 (4), 231-233, 2005 | 38 | 2005 |
| Thermal response of Ru electrodes in contact with SiO 2 and Hf-based high-k gate dielectrics HC Wen, P Lysaght, HN Alshareef, C Huffman, HR Harris, K Choi, ... Journal of applied physics 98 (4), 043520-043520-6, 2005 | 36 | 2005 |
Husam N AlshareefKAUST, Saudi Arabia; Univeristy of Texas at Dallas (Adjunct)kaust.edu.sa의 이메일 확인됨
