Remis Gaska

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Michael ShurPatricia W. and C. Sheldon Roberts Professor, Rensselaer PolytechnicVerified email at rpi.edu
Grigory SiminUniversity of South CarolinaVerified email at engr.sc.edu
Max ShatalovCVD Equipment CorporationVerified email at cvdequipment.com
Nezih PalaElectrical & Computer Engineering, Florida International UniversityVerified email at fiu.edu
Juras MickeviciusVilnius UniversityVerified email at ff.vu.lt
Craig MoeAkoustis TechnologiesVerified email at akoustis.com
Saulius Jursenasprofesorius, Vilniaus universitetasVerified email at ff.vu.lt
WOJCIECH KNAPCENTERA LABORATORIES - Polish Academy of Sciences and Technical University WARSAW POLANDVerified email at unipress.waw.pl
Marcinkevicius SauliusKTH Royal Institute of TechnologyVerified email at kth.se
Karolis KazlauskasChief Researcher, Vilnius UniversityVerified email at ff.vu.lt
Ramunas AleksiejunasVilnius UniversityVerified email at ff.vu.lt
Jonas JurkevičiusResearch fellow, Vilnius UniversityVerified email at ff.vu.lt
Thomas M KatonaCalifornia Polytechnic State UniversityVerified email at calpoly.edu
Kai LiuTAECVerified email at taec.toshiba.com
Gregory SniderProfessor of Electrical EngineeringVerified email at nd.edu
Alexei O. OrlovResearch Professor of Electrical Engineering, University of Notre DameVerified email at nd.edu
Ilesanmi AdesidaNazarbayev University and University of IllinoisVerified email at nu.edu.kz
Alok KumarProfessor of Finance, University of MiamiVerified email at miami.edu
Himanshu SaxenaIIT KGP, IIT Kanpur, University of Central FloridaVerified email at knights.ucf.edu
R PealePhysics, University of Central Florida, Lehigh University, Cornell UniversityVerified email at ucf.edu

Remis Gaska

UVTON, Inc.

Verified email at uvton.com - Homepage

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Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Introduction to solid-state lighting A Žukauskas, M Shur, R Gaska (No Title), 2002	991	2002
AlGaN deep-ultraviolet light-emitting diodes with external quantum efficiency above 10% M Shatalov, W Sun, A Lunev, X Hu, A Dobrinsky, Y Bilenko, J Yang, ... Applied Physics Express 5 (8), 082101, 2012	538	2012
Nonresonant detection of terahertz radiation in field effect transistors LCB W Knap, V Kachorovskii, Y Deng, S Rumyantsev, JQ Lü, R Gaska, MS Shur ... Journal of Applied Physics 91 (11), 9346-9353, 2002	503	2002
AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor MA Khan, X Hu, G Sumin, A Lunev, J Yang, R Gaska, MS Shur IEEE Electron Device Letters 21 (2), 63-65, 2000	480	2000
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates MA Khan, X Hu, A Tarakji, G Simin, J Yang, R Gaska, MS Shur Applied Physics Letters 77 (9), 1339-1341, 2000	433	2000
Self-heating in high-power AlGaN-GaN HFETs R Gaska, A Osinsky, JW Yang, MS Shur IEEE Electron Device Letters 19 (3), 89-91, 1998	393	1998
Deep-ultraviolet light-emitting diodes MS Shur, R Gaska IEEE Transactions on electron devices 57 (1), 12-25, 2009	386	2009
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates R Gaska, JW Yang, A Osinsky, Q Chen, MA Khan, AO Orlov, GL Snider, ... Applied Physics Letters 72 (6), 707-709, 1998	329	1998
–metal–insulator–semiconductor heterostructure field–effect transistors X Hu, A Koudymov, G Simin, J Yang, MA Khan, A Tarakji, MS Shur, ... Applied Physics Letters 79 (17), 2832-2834, 2001	328	2001
Low noise p-π-n GaN ultraviolet photodetectors A Osinsky, S Gangopadhyay, R Gaska, B Williams, MA Khan, ... Applied Physics Letters 71 (16), 2334-2336, 1997	321	1997
White light emitting device and method A Zukauskas, R Gaska, M Shur US Patent 7,095,056, 2006	288	2006
High-temperature performance of AlGaN/GaN HFETs on SiC substrates R Gaska, Q Chen, J Yang, A Osinsky, MA Khan, MS Shur IEEE Electron Device Letters 18 (10), 492-494, 1997	288	1997
Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate X Hu, G Simin, J Yang, MA Khan, R Gaska, MS Shur Electronics Letters 36 (8), 753-754, 2000	271	2000
Electron mobility in modulation-doped AlGaN–GaN heterostructures R Gaska, MS Shur, AD Bykhovski, AO Orlov, GL Snider Applied physics letters 74 (2), 287-289, 1999	244	1999
High power AlGaN ultraviolet light emitters M Shatalov, W Sun, R Jain, A Lunev, X Hu, A Dobrinsky, Y Bilenko, ... Semiconductor Science and Technology 29 (8), 084007, 2014	218	2014
High-efficiency 269 nm emission deep ultraviolet light-emitting diodes V Adivarahan, S Wu, JP Zhang, A Chitnis, M Shatalov, V Mandavilli, ... Applied Physics Letters 84 (23), 4762-4764, 2004	214	2004
Visible-blind GaN Schottky barrier detectors grown on Si (111) A Osinsky, S Gangopadhyay, JW Yang, R Gaska, D Kuksenkov, H Temkin, ... Applied physics letters 72 (5), 551-553, 1998	207	1998
Optimization of white polychromatic semiconductor lamps A Žukauskas, R Vaicekauskas, F Ivanauskas, R Gaska, MS Shur Applied Physics Letters 80 (2), 234-236, 2002	205	2002
Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells E Kuokstis, JW Yang, G Simin, MA Khan, R Gaska, MS Shur Applied Physics Letters 80 (6), 977-979, 2002	200	2002
Lattice and energy band engineering in AlInGaN/GaN heterostructures MA Khan, JW Yang, G Simin, R Gaska, MS Shur, HC zur Loye, ... Applied Physics Letters 76 (9), 1161-1163, 2000	186	2000

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