| Perovskite-related (CH 3 NH 3) 3 Sb 2 Br 9 for forming-free memristor and low-energy-consuming neuromorphic computing JM Yang, ES Choi, SY Kim, JH Kim, JH Park, NG Park Nanoscale 11 (13), 6453-6461, 2019 | 143 | 2019 |
| Layered (C6H5CH2NH3)2CuBr4 Perovskite for Multilevel Storage Resistive Switching Memory SY Kim, JM Yang, ES Choi, NG Park Advanced Functional Materials, 2002653, 2020 | 101 | 2020 |
| Efficient surface passivation of perovskite films by a post-treatment method with a minimal dose DH Kang, SY Kim, JW Lee, NG Park Journal of Materials Chemistry A 9 (6), 3441-3450, 2021 | 75 | 2021 |
| Effect of interlayer spacing in layered perovskites on resistive switching memory SY Kim, JM Yang, ES Choi, NG Park Nanoscale 11 (30), 14330-14338, 2019 | 46 | 2019 |
| Synthetic Powder-Based Thin (<0.1 μm) Cs3Bi2Br9 Perovskite Films for Air-Stable and Viable Resistive Switching Memory SY Kim, DA Park, NG Park ACS Applied Electronic Materials 4 (5), 2388-2395, 2022 | 30 | 2022 |
| Asymmetric carrier transport in flexible interface-type memristor enables artificial synapses with sub-femtojoule energy consumption JM Yang, YK Jung, JH Lee, YC Kim, SY Kim, S Seo, DA Park, JH Kim, ... Nanoscale Horizons 6 (12), 987-997, 2021 | 27 | 2021 |
| A layered (n-C 4 H 9 NH 3) 2 CsAgBiBr 7 perovskite for bipolar resistive switching memory with a high ON/OFF ratio SY Kim, JM Yang, SH Lee, NG Park Nanoscale 13 (29), 12475-12483, 2021 | 27 | 2021 |
| Mixed‐Dimensional Formamidinium Bismuth Iodides Featuring In‐Situ Formed Type‐I Band Structure for Convolution Neural Networks JM Yang, JH Lee, YK Jung, SY Kim, JH Kim, SG Kim, JH Kim, S Seo, ... Advanced Science 9 (14), 2200168, 2022 | 17 | 2022 |
| High-performing laminated perovskite solar cells by surface engineering of perovskite films OY Gong, MK Seo, JH Choi, SY Kim, DH Kim, IS Cho, NG Park, GS Han, ... Applied Surface Science 591, 153148, 2022 | 16 | 2022 |
| The effect of compositional engineering of imidazolium lead iodide on the resistive switching properties ES Choi, JM Yang, SG Kim, C Cuhadar, SY Kim, SH Kim, D Lee, NG Park Nanoscale 11 (30), 14455-14464, 2019 | 16 | 2019 |
| Artificial Synapse Based on a δ-FAPbI3/Atomic-Layer-Deposited SnO2 Bilayer Memristor SU Lee, SY Kim, JH Lee, JH Baek, JW Lee, HW Jang, NG Park Nano Letters, 2024 | 6 | 2024 |
| Intact metal/metal halide van der Waals junction enables reliable memristive switching with high endurance JH Lee, JM Yang, SY Kim, S Baek, S Lee, SJ Lee, NG Park, JW Lee Advanced Functional Materials 33 (14), 2214142, 2023 | 6 | 2023 |
| Operating Mechanism Principles and Advancements for Halide Perovskite-Based Memristors and Neuromorphic Devices SY Kim, H Zhang, J Rubio-Magnieto The Journal of Physical Chemistry Letters 15, 10087–10103, 2024 | | 2024 |
Nam-Gyu ParkProfessor of School of Chemical Engineering, Sungkyunkwan UniversityVerified email at skku.edu
