Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 137 | 2015 |
Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied physics letters 104 (14), 141603, 2014 | 74 | 2014 |
Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied Physics Letters 104 (14), 141603, 2014 | 74 | 2014 |
Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied Physics Letters 104 (14), 141603, 2014 | 74 | 2014 |
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 115 (8), 084506, 2014 | 73 | 2014 |
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 115 (8), 084506, 2014 | 73 | 2014 |
Atomistic full-band simulations of monolayer MoS2 transistors J Chang, LF Register, SK Banerjee Applied Physics Letters 103 (22), 223509, 2013 | 52 | 2013 |
Theoretical study of phosphorene tunneling field effect transistors J Chang, C Hobbs Applied Physics Letters 106 (8), 083509, 2015 | 44 | 2015 |
Density functional study of ternary topological insulator thin films J Chang, LF Register, SK Banerjee, B Sahu Physical Review B 83 (23), 235108, 2011 | 38 | 2011 |
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee 2D Materials 2 (4), 045009, 2015 | 35 | 2015 |
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 112 (12), 124511, 2012 | 32 | 2012 |
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 112 (12), 124511, 2012 | 32 | 2012 |
Analytical model of short-channel double-gate JFETs J Chang, AK Kapoor, LF Register, SK Banerjee IEEE transactions on electron devices 57 (8), 1846-1855, 2010 | 32 | 2010 |
Topological insulator-based field-effect transistor SK Banerjee, IILF Register, A MacDonald, BR Sahu, P Jadaun, J Chang US Patent 8,629,427, 2014 | 23 | 2014 |
Tunnelling-based ternary metal–oxide–semiconductor technology JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ... Nature Electronics 2 (7), 307-312, 2019 | 21 | 2019 |
Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure J Chang Nanoscale, 2018 | 19 | 2018 |
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors J Chang Journal of Applied Physics 117 (21), 214502, 2015 | 14 | 2015 |
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors J Chang Journal of Applied Physics 117 (21), 214502, 2015 | 14 | 2015 |
Dielectric capping effects on binary and ternary topological insulator surface states J Chang, P Jadaun, LF Register, SK Banerjee, B Sahu Physical Review B 84 (15), 155105, 2011 | 8 | 2011 |
Doping-free arsenene heterostructure metal-oxide-semiconductor field effect transistors enabled by thickness modulated semiconductor to metal transition in arsenene D Seo, J Chang Scientific reports 9 (1), 1-10, 2019 | 5 | 2019 |