Jiwon Chang
Jiwon Chang
Verified email at yonsei.ac.kr
Title
Cited by
Cited by
Year
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
1372015
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied physics letters 104 (14), 141603, 2014
742014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
742014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
742014
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
732014
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
732014
Atomistic full-band simulations of monolayer MoS2 transistors
J Chang, LF Register, SK Banerjee
Applied Physics Letters 103 (22), 223509, 2013
522013
Theoretical study of phosphorene tunneling field effect transistors
J Chang, C Hobbs
Applied Physics Letters 106 (8), 083509, 2015
442015
Density functional study of ternary topological insulator thin films
J Chang, LF Register, SK Banerjee, B Sahu
Physical Review B 83 (23), 235108, 2011
382011
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee
2D Materials 2 (4), 045009, 2015
352015
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
322012
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
322012
Analytical model of short-channel double-gate JFETs
J Chang, AK Kapoor, LF Register, SK Banerjee
IEEE transactions on electron devices 57 (8), 1846-1855, 2010
322010
Topological insulator-based field-effect transistor
SK Banerjee, IILF Register, A MacDonald, BR Sahu, P Jadaun, J Chang
US Patent 8,629,427, 2014
232014
Tunnelling-based ternary metal–oxide–semiconductor technology
JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ...
Nature Electronics 2 (7), 307-312, 2019
212019
Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure
J Chang
Nanoscale, 2018
192018
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
J Chang
Journal of Applied Physics 117 (21), 214502, 2015
142015
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
J Chang
Journal of Applied Physics 117 (21), 214502, 2015
142015
Dielectric capping effects on binary and ternary topological insulator surface states
J Chang, P Jadaun, LF Register, SK Banerjee, B Sahu
Physical Review B 84 (15), 155105, 2011
82011
Doping-free arsenene heterostructure metal-oxide-semiconductor field effect transistors enabled by thickness modulated semiconductor to metal transition in arsenene
D Seo, J Chang
Scientific reports 9 (1), 1-10, 2019
52019
The system can't perform the operation now. Try again later.
Articles 1–20