| Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ... Nano letters 15 (7), 4329-4336, 2015 | 101 | 2015 |
| Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied Physics Letters 104 (14), 141603, 2014 | 67 | 2014 |
| Atomistic simulation of the electronic states of adatoms in monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee Applied Physics Letters 104 (14), 141603, 2014 | 67 | 2014 |
| Atomistic Simulation of Doping by Adatoms in Monolayer MoS2 J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee arXiv preprint arXiv:1305.7162, 2013 | 67* | 2013 |
| Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 115 (8), 084506, 2014 | 65 | 2014 |
| Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 115 (8), 084506, 2014 | 65 | 2014 |
| Atomistic full-band simulations of monolayer MoS2 transistors J Chang, LF Register, SK Banerjee Applied Physics Letters 103 (22), 223509, 2013 | 48 | 2013 |
| Theoretical study of phosphorene tunneling field effect transistors J Chang, C Hobbs Applied Physics Letters 106 (8), 083509, 2015 | 38 | 2015 |
| Density functional study of ternary topological insulator thin films J Chang, LF Register, SK Banerjee, B Sahu Physical Review B 83 (23), 235108, 2011 | 37 | 2011 |
| Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee 2D Materials 2 (4), 045009, 2015 | 28 | 2015 |
| Analytical model of short-channel double-gate JFETs J Chang, AK Kapoor, LF Register, SK Banerjee IEEE transactions on electron devices 57 (8), 1846-1855, 2010 | 28 | 2010 |
| Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 112 (12), 124511, 2012 | 27 | 2012 |
| Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors J Chang, LF Register, SK Banerjee Journal of Applied Physics 112 (12), 124511, 2012 | 27 | 2012 |
| Topological insulator-based field-effect transistor SK Banerjee, FRII Leonard, A MacDonald, BR Sahu, P Jadaun, J Chang US Patent 8,629,427, 2014 | 21 | 2014 |
| Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors J Chang Journal of Applied Physics 117 (21), 214502, 2015 | 12 | 2015 |
| Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors J Chang Journal of Applied Physics 117 (21), 214502, 2015 | 12 | 2015 |
| Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure J Chang Nanoscale, 2018 | 8 | 2018 |
| Dielectric capping effects on binary and ternary topological insulator surface states J Chang, P Jadaun, LF Register, SK Banerjee, B Sahu Physical Review B 84 (15), 155105, 2011 | 8 | 2011 |
| Tunnelling-based ternary metal–oxide–semiconductor technology JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ... Nature Electronics 2 (7), 307-312, 2019 | 4 | 2019 |
| Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X= S, Se, Te) n-MOSFETs J Chang Journal of Physics D: Applied Physics 48 (14), 145101, 2015 | 4 | 2015 |
Leonard F. RegisterProfessor of Electrical and Computer EngineeringVerified email at austin.utexas.edu
