Jiwon Chang
Jiwon Chang
Verified email at unist.ac.kr
Title
Cited by
Cited by
Year
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
A Rai, A Valsaraj, HCP Movva, A Roy, R Ghosh, S Sonde, S Kang, ...
Nano letters 15 (7), 4329-4336, 2015
1012015
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
672014
Atomistic simulation of the electronic states of adatoms in monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
Applied Physics Letters 104 (14), 141603, 2014
672014
Atomistic Simulation of Doping by Adatoms in Monolayer MoS2
J Chang, S Larentis, E Tutuc, LF Register, SK Banerjee
arXiv preprint arXiv:1305.7162, 2013
67*2013
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
652014
Ballistic performance comparison of monolayer transition metal dichalcogenide MX2 (M= Mo, W; X= S, Se, Te) metal-oxide-semiconductor field effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 115 (8), 084506, 2014
652014
Atomistic full-band simulations of monolayer MoS2 transistors
J Chang, LF Register, SK Banerjee
Applied Physics Letters 103 (22), 223509, 2013
482013
Theoretical study of phosphorene tunneling field effect transistors
J Chang, C Hobbs
Applied Physics Letters 106 (8), 083509, 2015
382015
Density functional study of ternary topological insulator thin films
J Chang, LF Register, SK Banerjee, B Sahu
Physical Review B 83 (23), 235108, 2011
372011
Theoretical and experimental investigation of vacancy-based doping of monolayer MoS2 on oxide
A Valsaraj, J Chang, A Rai, LF Register, SK Banerjee
2D Materials 2 (4), 045009, 2015
282015
Analytical model of short-channel double-gate JFETs
J Chang, AK Kapoor, LF Register, SK Banerjee
IEEE transactions on electron devices 57 (8), 1846-1855, 2010
282010
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
272012
Topological insulator Bi2Se3 thin films as an alternative channel material in metal-oxide-semiconductor field-effect transistors
J Chang, LF Register, SK Banerjee
Journal of Applied Physics 112 (12), 124511, 2012
272012
Topological insulator-based field-effect transistor
SK Banerjee, FRII Leonard, A MacDonald, BR Sahu, P Jadaun, J Chang
US Patent 8,629,427, 2014
212014
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
J Chang
Journal of Applied Physics 117 (21), 214502, 2015
122015
Modeling of anisotropic two-dimensional materials monolayer HfS2 and phosphorene metal-oxide semiconductor field effect transistors
J Chang
Journal of Applied Physics 117 (21), 214502, 2015
122015
Novel Antimonene Tunneling Field-Effect Transistors Using Abrupt Transition of Semiconductor to Metal in Monolayer and Multilayer Antimonene Heterostructure
J Chang
Nanoscale, 2018
82018
Dielectric capping effects on binary and ternary topological insulator surface states
J Chang, P Jadaun, LF Register, SK Banerjee, B Sahu
Physical Review B 84 (15), 155105, 2011
82011
Tunnelling-based ternary metal–oxide–semiconductor technology
JW Jeong, YE Choi, WS Kim, JH Park, S Kim, S Shin, K Lee, J Chang, ...
Nature Electronics 2 (7), 307-312, 2019
42019
Simulation of channel orientation dependent transport in ultra-scaled monolayer MoX2 (X= S, Se, Te) n-MOSFETs
J Chang
Journal of Physics D: Applied Physics 48 (14), 145101, 2015
42015
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Articles 1–20