Meng Qi
Meng Qi
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1.9-kV AlGaN/GaN lateral Schottky barrier diodes on silicon
M Zhu, B Song, M Qi, Z Hu, K Nomoto, X Yan, Y Cao, W Johnson, E Kohn, ...
IEEE Electron Device Letters 36 (4), 375-377, 2015
1.7-kV and 0.55- GaN p-n Diodes on Bulk GaN Substrates With Avalanche Capability
K Nomoto, B Song, Z Hu, M Zhu, M Qi, N Kaneda, T Mishima, T Nakamura, ...
IEEE Electron Device Letters 37 (2), 161-164, 2015
Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN pn diodes with avalanche breakdown
Z Hu, K Nomoto, B Song, M Zhu, M Qi, M Pan, X Gao, V Protasenko, ...
Applied Physics Letters 107 (24), 2015
Novel gate-recessed vertical InAs/GaSb TFETs with record high IONof 180 μA/μm at VDS= 0.5 V
G Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
2012 International Electron Devices Meeting, 32.6. 1-32.6. 4, 2012
Hot electron transistor with van der Waals base-collector heterojunction and high-performance GaN emitter
A Zubair, A Nourbakhsh, JY Hong, M Qi, Y Song, D Jena, J Kong, ...
Nano letters 17 (5), 3089-3096, 2017
GaN-on-GaN pn power diodes with 3.48 kV and 0.95 mΩ-cm2: A record high figure-of-merit of 12.8 GW/cm2
K Nomoto, Z Hu, B Song, M Zhu, M Qi, R Yan, V Protasenko, E Imhoff, ...
2015 IEEE international electron devices meeting (IEDM), 9.7. 1-9.7. 4, 2015
1.1-kV vertical GaN pn diodes with p-GaN regrown by molecular beam epitaxy
Z Hu, K Nomoto, M Qi, W Li, M Zhu, X Gao, D Jena, HG Xing
IEEE Electron Device Letters 38 (8), 1071-1074, 2017
High breakdown single-crystal GaN pn diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 2015
Strained GaN Quantum-Well FETs on Single Crystal Bulk AlN Substrates
M Qi, G Li, S Ganguly, P Zhao, X Yan, J Verma, B Song, M Zhu, K Nomoto, ...
Applied Physics Letters 110 (6), 063501, 2017
Ultralow-leakage AlGaN/GaN high electron mobility transistors on Si with non-alloyed regrown ohmic contacts
B Song, M Zhu, Z Hu, M Qi, K Nomoto, X Yan, Y Cao, D Jena, HG Xing
IEEE Electron Device Letters 37 (1), 16-19, 2015
IEDM Tech. Dig.
J Zhou, R Li, T Vasen, M Qi, S Chae, Y Lu, Q Zhang, H Zhu, JM Kuo, ...
IEDM Tech. Dig, 773, 2012
Dual optical marker Raman characterization of strained GaN-channels on AlN using AlN/GaN/AlN quantum wells and 15N isotopes
M Qi, G Li, V Protasenko, P Zhao, J Verma, B Song, S Ganguly, M Zhu, ...
Applied Physics Letters 106 (4), 2015
Band Anticrossing in Dilute Germanium Carbides Using Hybrid Functionals
CA Stephenson, WA O'brien, M Qi, M Penninger, W Schneider, MA Wistey
Journal of Electronic Materials April 2016, Volume 45, Issue 4, pp 2121–2126, 2014
Electron mobility in polarization-doped Al0-0.2 GaN with a low concentration near 1017 cm− 3
M Zhu, M Qi, K Nomoto, Z Hu, B Song, M Pan, X Gao, D Jena, HG Xing
Applied Physics Letters 110 (18), 2017
Unique opportunity to harness polarization in GaN to override the conventional power electronics figure-of-merits
HG Xing, B Song, M Zhu, Z Hu, M Qi, K Nomoto, D Jena
2015 73rd Annual Device Research Conference (DRC), 51-52, 2015
Characteristics of In0.17Al0.83N/AlN/GaN MOSHEMTs with steeper than 60 mV/decade sub-threshold slopes in the deep sub-threshold region
Z Hu, R Jana, M Qi, S Ganguly, B Song, E Kohn, D Jena, HG Xing
72nd Device Research Conference, 27-28, 2014
Ge quantum dots encapsulated by AlAs grown by molecular beam epitaxy on GaAs without extended defects
M Qi, CA Stephenson, V Protasenko, WA O’Brien, A Mintairov, HG Xing, ...
Applied Physics Letters 104 (7), 2014
First demonstration of strained AlN/GaN/AlN quantum well FETs on SiC
SM Islam, M Qi, B Song, K Nomoto, V Protasenko, J Wang, S Rouvimov, ...
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
Extended defect propagation in highly tensile-strained Ge waveguides
M Qi, WA O’Brien, CA Stephenson, V Patel, N Cao, BJ Thibeault, ...
Crystals 7 (6), 157, 2017
GaN tunnel switch diodes
A Chaney, M Qi, SM Islam, HG Xing, D Jena
2016 74th Annual Device Research Conference (DRC), 1-2, 2016
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