| An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR O Jardel, F De Groote, T Reveyrand, JC Jacquet, C Charbonniaud, ... IEEE Transactions on Microwave Theory and Techniques 55 (12), 2660-2669, 2007 | 306 | 2007 |
| 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization JP Teyssier, P Bouysse, Z Ouarch, D Barataud, T Peyretaillade, R Quéré IEEE Transactions on Microwave Theory and Techniques 46 (12), 2043-2052, 1998 | 111 | 1998 |
| New trends for the nonlinear measurement and modeling of high-power RF transistors and amplifiers with memory effects P Roblin, DE Root, J Verspecht, Y Ko, JP Teyssier IEEE Transactions on Microwave Theory and Techniques 60 (6), 1964-1978, 2012 | 93 | 2012 |
| A drain-lag model for AlGaN/GaN power HEMTs O Jardel, F De Groote, C Charbonniaud, T Reveyrand, JP Teyssier, ... 2007 IEEE/MTT-S international microwave symposium, 601-604, 2007 | 62 | 2007 |
| An active pulsed RF and pulsed DC load-pull system for the characterization of HBT power amplifiers used in coherent radar and communication systems C Arnaud, D Basataud, J Nebus, J Teyssier, J Villotte, D Floriot IEEE Transactions on Microwave Theory and Techniques 48 (12), 2625-2629, 2000 | 48 | 2000 |
| The use of artificial neural networks in nonlinear microwave devices and circuits modeling: An application to telecommunication system design (invited article) Y Harkouss, J Rousset, H Chehade, E Ngoya, D Barataud, JP Teyssier International Journal of RF and Microwave Computer‐Aided Engineering 9 (3 …, 1999 | 48 | 1999 |
| A new nonlinear I (V) model for FET devices including breakdown effects JP Teyssier, JP Viaud, R Quéré IEEE Microwave and Guided Wave Letters 4 (4), 104-106, 1994 | 48 | 1994 |
| Method and an apparatus for characterizing a high-frequency device-under-test in a large signal impedance tuning environment J Verspecht, JP Teyssier US Patent 7,282,926, 2007 | 47 | 2007 |
| A pulsed S-parameters measurement setup for the non-linear characterization of FETs and bipolar power transistors JP Teyssier, M Campovecchio, C Sommet, J Portilla, R Quéré 1993 23rd European Microwave Conference, 489-493, 1993 | 46 | 1993 |
| Fully integrated nonlinear modeling and characterization system of microwave transistors with on-wafer pulsed measurements JP Teyssier, JP Viaud, JJ Raoux, R Quere Proceedings of 1995 IEEE MTT-S International Microwave Symposium, 1033-1036, 1995 | 45 | 1995 |
| Introduction to measurements for power transistor characterization F De Groote, JP Teyssier, T Gasseling, O Jardel, J Verspecht IEEE Microwave Magazine 9 (3), 70-85, 2008 | 40 | 2008 |
| Hot S-parameter techniques: 6= 4+ 2 J Verspecht, D Barataud, JP Teyssier, JM Nébus 2005 66th ARFTG Microwave Measurement Conference (ARFTG), 1-9, 2005 | 40 | 2005 |
| Characterizing amplifier modulation distortion using a vector network analyzer J Verspecht, A Stav, JP Teyssier, S Kusano 2019 93rd ARFTG Microwave Measurement Conference (ARFTG), 1-4, 2019 | 39 | 2019 |
| An improved coupling method for time domain load-pull measurements F De Groote, J Verspecht, D Barataud, JP Teyssier 2005 European Microwave Conference 1, 4 pp., 2005 | 36 | 2005 |
| A new nonlinear HEMT model for AlGaN/GaN switch applications G Callet, J Faraj, O Jardel, C Charbonniaud, JC Jacquet, T Reveyrand, ... International journal of microwave and wireless technologies 2 (3-4), 283-291, 2010 | 35 | 2010 |
| Measurement based nonlinear electrothermal modeling of GaAs FET with dynamical trapping effects Z Ouarch, JM Collantes, JP Teyssier, R Quere 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 98CH36192 …, 1998 | 35 | 1998 |
| Characterization and modeling of nonlinear trapping effects in power SiC MESFETs D Siriex, D Barataud, R Sommet, O Noblanc, Z Ouarch, C Brylinski, ... 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No. 00CH37017 …, 2000 | 31 | 2000 |
| Pulsed-IV Pulsed-RF Cold-FET Parasitic Extraction of Biased AlGaN/GaN HEMTs Using Large Signal Network Analyzer CK Yang, P Roblin, F De Groote, SA Ringel, S Rajan, JP Teyssier, ... IEEE transactions on microwave theory and techniques 58 (5), 1077-1088, 2010 | 30 | 2010 |
| A new nonlinear HEMT model for AlGaN/GaN switch applications O Jardel, G Callet, C Charbonniaud, JC Jacquet, N Sarazin, E Morvan, ... 2009 European Microwave Integrated Circuits Conference (EuMIC), 73-76, 2009 | 30 | 2009 |
| Electrothermal and trapping effects characterisation of AlGaN/GaN HEMTs C Charbonniaud, S De Meyer, R Quéré, JP Teyssier Horizon house, 2003 | 29 | 2003 |
