| The 2017 Plasma Roadmap: Low temperature plasma science and technology I Adamovich, SD Baalrud, A Bogaerts, PJ Bruggeman, M Cappelli, ... Journal of Physics D: Applied Physics 50 (32), 323001, 2017 | 805 | 2017 |
| Study of the -to- etch selectivity mechanism in inductively coupled fluorocarbon plasmas and a comparison with the -to-Si mechanism M Schaepkens, T Standaert, NR Rueger, PGM Sebel, GS Oehrlein, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17 (1 …, 1999 | 324 | 1999 |
| Role of steady state fluorocarbon films in the etching of silicon dioxide using CHF in an inductively coupled plasma reactor NR Rueger, JJ Beulens, M Schaepkens, MF Doemling, JM Mirza, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 15 (4 …, 1997 | 311 | 1997 |
| Role of fluorocarbon film formation in the etching of silicon, silicon dioxide, silicon nitride, and amorphous hydrogenated silicon carbide T Standaert, C Hedlund, EA Joseph, GS Oehrlein, TJ Dalton Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (1 …, 2004 | 305 | 2004 |
| High density fluorocarbon etching of silicon in an inductively coupled plasma: mechanism of etching through a thick steady state fluorocarbon layer T Standaert, M Schaepkens, NR Rueger, PGM Sebel, GS Oehrlein, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 16 (1 …, 1998 | 294 | 1998 |
| Reactor for plasma-based atomic layer etching of materials GS Oehrlein, D Metzler US Patent 9,620,382, 2017 | 275 | 2017 |
| Fluorocarbon high‐density plasmas. I. Fluorocarbon film deposition and etching using CF4 and CHF3 GS Oehrlein, Y Zhang, D Vender, M Haverlag Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (2 …, 1994 | 266 | 1994 |
| Surface chemistry studies of copper chemical mechanical planarization J Hernandez, P Wrschka, GS Oehrlein Journal of the Electrochemical Society 148 (7), G389, 2001 | 242 | 2001 |
| Silicon etching mechanisms in a CF4/H2 glow discharge GS Oehrlein, HL Williams Journal of applied physics 62 (2), 662-672, 1987 | 223 | 1987 |
| Atomic layer etching at the tipping point: an overview GS Oehrlein, D Metzler, C Li ECS Journal of Solid State Science and Technology 4 (6), N5041, 2015 | 221 | 2015 |
| Plasma-polymer interactions: A review of progress in understanding polymer resist mask durability during plasma etching for nanoscale fabrication GS Oehrlein, RJ Phaneuf, DB Graves Journal of Vacuum Science & Technology B, Nanotechnology and …, 2011 | 207 | 2011 |
| Fluorocarbon high‐density plasmas. II. Silicon dioxide and silicon etching using CF4 and CHF3 GS Oehrlein, Y Zhang, D Vender, O Joubert Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 12 (2 …, 1994 | 204 | 1994 |
| Chemical dry etching of silicon nitride and silicon dioxide using CF4/O2/N2 gas mixtures BEE Kastenmeier, PJ Matsuo, JJ Beulens, GS Oehrlein Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (5 …, 1996 | 197 | 1996 |
| Dry etching damage of silicon: A review GS Oehrlein Materials Science and Engineering: B 4 (1-4), 441-450, 1989 | 193 | 1989 |
| Near‐surface damage and contamination after CF 4/H 2 reactive ion etching of Si GS Oehrlein, RM Tromp, JC Tsang, YH Lee, EJ Petrillo Journal of the Electrochemical Society 132 (6), 1441, 1985 | 189 | 1985 |
| Fluorocarbon assisted atomic layer etching of SiO2 using cyclic Ar/C4F8 plasma D Metzler, RL Bruce, S Engelmann, EA Joseph, GS Oehrlein Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 32 (2 …, 2014 | 187 | 2014 |
| Study of sidewall passivation and microscopic silicon roughness phenomena in chlorine‐based reactive ion etching of silicon trenches GS Oehrlein, JF Rembetski, EH Payne Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990 | 163 | 1990 |
| Oxidation temperature dependence of the dc electrical conduction characteristics and dielectric strength of thin Ta2O5 films on silicon GS Oehrlein Journal of applied physics 59 (5), 1587-1595, 1986 | 148 | 1986 |
| Apparatus for hot wall reactive ion etching using a dielectric or metallic liner with temperature control to achieve process stability GS Oehrlein, D Vender, Y Zhang, M Haverlag US Patent 5,798,016, 1998 | 146 | 1998 |
| Properties of inductively coupled plasmas. II. Plasma chemistry and reaction mechanism for modeling of discharges AV Vasenkov, X Li, GS Oehrlein, MJ Kushner Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 22 (3 …, 2004 | 145 | 2004 |
