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Geun-Young Yeom
Geun-Young Yeom
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Fabrication of InAs composite channel high electron mobility transistors by utilizing Ne-based atomic layer etching
TW Kim, JI Song, JH Jang, DH Kim, SD Park, JW Bae, GY Yeom
Applied physics letters 91 (10), 2007
9502007
Atomic layer etching apparatus and etching method using the same
G Yeom, WS Lim, P Sang-Duk, YY Kim, BJ Park, JK Yeon
US Patent App. 12/712,944, 2011
4802011
Atomic layer deposition apparatus using neutral beam and method of depositing atomic layer using the same
G Yeom, DH Lee, BJ Park, KJ Ahn
US Patent 7,919,142, 2011
3772011
Neutral beam-assisted atomic layer chemical vapor deposition apparatus and method of processing substrate using the same
G Yeom, BJ Park, SW Kim, JT Lim
US Patent 7,799,706, 2010
3652010
Flexible Molybdenum Disulfide (MoS2) Atomic Layers for Wearable Electronics and Optoelectronics
E Singh, P Singh, KS Kim, GY Yeom, HS Nalwa
ACS applied materials & interfaces 11 (12), 11061-11105, 2019
3612019
Atomically Thin-Layered Molybdenum Disulfide (MoS2) for Bulk-Heterojunction Solar Cells
E Singh, KS Kim, GY Yeom, HS Nalwa
ACS applied materials & interfaces 9 (4), 3223-3245, 2017
2762017
High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ...
Advanced Materials 28 (32), 6985-6992, 2016
2422016
Recent advances in doping of molybdenum disulfide: industrial applications and future prospects
VP Pham, GY Yeom
Advanced Materials 28 (41), 9024-9059, 2016
2372016
Low‐temperature synthesis of large‐scale molybdenum disulfide thin films directly on a plastic substrate using plasma‐enhanced chemical vapor deposition
C Ahn, J Lee, HU Kim, H Bark, M Jeon, GH Ryu, Z Lee, GY Yeom, K Kim, ...
Advanced Materials 27 (35), 5223-5229, 2015
2242015
Two-dimensional transition metal dichalcogenide-based counter electrodes for dye-sensitized solar cells
E Singh, KS Kim, GY Yeom, HS Nalwa
RSC advances 7 (45), 28234-28290, 2017
2052017
A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique
SH Jo, DH Kang, J Shim, J Jeon, MH Jeon, G Yoo, J Kim, J Lee, GY Yeom, ...
Advanced Materials 28 (24), 4824-4831, 2016
1732016
Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane
DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ...
ACS nano 9 (2), 1099-1107, 2015
1722015
Room-temperature GaN vertical-cavity surface-emitting laser operation in an extended cavity scheme
SH Park, J Kim, H Jeon, T Sakong, SN Lee, S Chae, Y Park, CH Jeong, ...
Applied Physics Letters 83 (11), 2121-2123, 2003
1272003
A study of transparent indium tin oxide (ITO) contact to p-GaN
DW Kim, YJ Sung, JW Park, GY Yeom
Thin Solid Films 398, 87-92, 2001
1272001
Atomic layer etching of graphene for full graphene device fabrication
WS Lim, YY Kim, H Kim, S Jang, N Kwon, BJ Park, JH Ahn, I Chung, ...
Carbon 50 (2), 429-435, 2012
1232012
A comparative study of CF4/O2/Ar and C4F8/O2/Ar plasmas for dry etching applications
I Chun, A Efremov, GY Yeom, KH Kwon
Thin solid films 579, 136-143, 2015
1152015
Atomic Layer Etching Mechanism of MoS2 for Nanodevices
KS Kim, KH Kim, Y Nam, J Jeon, S Yim, E Singh, JY Lee, SJ Lee, YS Jung, ...
ACS Applied Materials & Interfaces 9 (13), 11967-11976, 2017
1112017
Non-epitaxial single-crystal 2D material growth by geometric confinement
KS Kim, D Lee, CS Chang, S Seo, Y Hu, S Cha, H Kim, J Shin, JH Lee, ...
Nature 614 (7946), 88-94, 2023
1072023
Controlled Layer-by-Layer Etching of MoS2
TZ Lin, BT Kang, MH Jeon, C Huffman, JH Jeon, SJ Lee, W Han, JY Lee, ...
ACS applied materials & interfaces 7 (29), 15892-15897, 2015
1042015
An optogenetics‐inspired flexible van der Waals optoelectronic synapse and its application to a convolutional neural network
S Seo, JJ Lee, RG Lee, TH Kim, S Park, S Jung, HK Lee, M Andreev, ...
Advanced Materials 33 (40), 2102980, 2021
992021
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