Changwook Jeong
Changwook Jeong
Associate Professor, Graduate School of Semicondutor Materials and Devices Engineering, UNIST
Verified email at - Homepage
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Highly reliable 50nm contact cell technology for 256Mb PRAM
SJ Ahn, YN Hwang, YJ Song, SH Lee, SY Lee, JH Park, CW Jeong, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 98-99, 2005
Highly manufacturable high density phase change memory of 64Mb and beyond
SJ Ahn, YJ Song, CW Jeong, JM Shin, Y Fai, YN Hwang, SH Lee, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Full integration of highly manufacturable 512Mb PRAM based on 90nm technology
JH Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
2006 International Electron Devices Meeting, 1-4, 2006
Co‐percolating graphene‐wrapped silver nanowire network for high performance, highly stable, transparent conducting electrodes
R Chen, SR Das, C Jeong, MR Khan, DB Janes, MA Alam
Advanced Functional Materials 23 (41), 5150-5158, 2013
Thermal conductivity of bulk and thin-film silicon: A Landauer approach
C Jeong, S Datta, M Lundstrom
Journal of Applied Physics 111 (9), 2012
On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients
C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 2010
Switching current scaling and reliability evaluation in PRAM
CW Jeong, SJ Ahn, YN Hwang, YJ Song, JH Oh, SY Lee, SH Lee, ...
IEEE Non-Volatile Semiconductor Memory Workshop, Monterey, CA, 28-29, 2004
Near-equilibrium transport: fundamentals and applications
MS Lundstrom, C Jeong
World Scientific Publishing Company, 2012
Prospects for nanowire-doped polycrystalline graphene films for ultratransparent, highly conductive electrodes
C Jeong, P Nair, M Khan, M Lundstrom, MA Alam
Nano letters 11 (11), 5020-5025, 2011
Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
YJ Song, YN Hwang, S Nam, SL Cho, GH Koh, CM Lee, BJ Kuh, Y Ha, ...
US Patent 7,482,616, 2009
Full integration and cell characteristics for 64Mb nonvolatile PRAM
SH Lee, YN Hwang, SY Lee, KC Ryoo, SJ Ahn, HC Koo, CW Jeong, ...
Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 20-21, 2004
Plasma-assisted atomic layer growth of high-quality aluminum oxide thin films
CW Jeong, JS Lee, SK Joo
Japanese Journal of Applied Physics 40 (1R), 285, 2001
Full dispersion versus Debye model evaluation of lattice thermal conductivity with a Landauer approach
C Jeong, S Datta, M Lundstrom
Journal of Applied Physics 109 (7), 2011
Highly reliable 256Mb PRAM with advanced ring contact technology and novel encapsulating technology
YJ Song, KC Ryoo, YN Hwang, CW Jeong, DW Lim, SS Park, JI Kim, ...
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers., 118-119, 2006
Artificial neural network-based compact modeling methodology for advanced transistors
J Wang, YH Kim, J Ryu, C Jeong, W Choi, D Kim
IEEE Transactions on Electron Devices 68 (3), 1318-1325, 2021
Phase-change random access memory device and method of operating the same
CW Jeong, SY Lee, WC Jeong, JH Park, SJ Ahn, F Yeung
US Patent 7,440,308, 2008
Learning student-friendly teacher networks for knowledge distillation
DY Park, MH Cha, C Jeong, D Kim, B Han
Advances in neural information processing systems 34, 13292-13303, 2021
Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications
HJ Cho, HS Oh, KJ Nam, YH Kim, KH Yeo, WD Kim, YS Chung, YS Nam, ...
2016 IEEE Symposium on VLSI Technology, 2016
Ge2Sb2Te5 confined structures and integration of 64 Mb phase-change random access memory
F Yeung, SJ Ahn, YN Hwang, CW Jeong, YJ Song, SY Lee, SH Lee, ...
Japanese Journal of Applied Physics 44 (4S), 2691, 2005
IEDM Tech. Dig.
CW Oh, JH Park, YS Lim, HS Lim, YT Oh, JS Kim, JM Shin, YJ Song, ...
IEDM Tech. Dig 2, 2006
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