Jubong Park
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Excellent Selector Characteristics of Nanoscalefor High-Density Bipolar ReRAM Applications
M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ...
IEEE Electron Device Letters 32 (11), 1579-1581, 2011
Effect of bilayer structure on switching uniformity and reliability in nonvolatile memory applications
J Lee, EM Bourim, W Lee, J Park, M Jo, S Jung, J Shin, H Hwang
Applied Physics Letters 97 (17), 172105, 2010
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ...
ACS nano 6 (9), 8166-8172, 2012
Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012
Diode-less bilayer oxide (WOx–NbOx) device for cross-point resistive memory applications
X Liu, SM Sadaf, M Son, J Shin, J Park, J Lee, S Park, H Hwang
Nanotechnology 22 (47), 475702, 2011
Multibit Operation of -Based ReRAM by Schottky Barrier Height Engineering
J Park, KP Biju, S Jung, W Lee, J Lee, S Kim, S Park, J Shin, H Hwang
Electron Device Letters, IEEE 32 (4), 476-478, 2011
Excellent Switching Uniformity of Cu-Doped Bilayer for Nonvolatile Memory Applications
J Yoon, H Choi, D Lee, JB Park, J Lee, DJ Seong, Y Ju, M Chang, S Jung, ...
Electron Device Letters, IEEE 30 (5), 457-459, 2009
Co-Occurrence of Threshold Switching and Memory Switching in Cells for Crosspoint Memory Applications
X Liu, SM Sadaf, M Son, J Park, J Shin, W Lee, K Seo, D Lee, H Hwang
IEEE electron device letters 33 (2), 236-238, 2011
Resistive-Switching Characteristics of $ hbox {Al}/hbox {Pr} _ {0.7} hbox {Ca} _ {0.3} hbox {MnO} _ {3} $ for Nonvolatile Memory Applications
DJ Seong, M Hassan, H Choi, J Lee, J Yoon, JB Park, W Lee, MS Oh, ...
Electron Device Letters, IEEE 30 (9), 919-921, 2009
Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ...
Microelectronic Engineering 107, 33-36, 2013
Investigation of state stability of low-resistance state in resistive memory
J Park, M Jo, EM Bourim, J Yoon, DJ Seong, J Lee, W Lee, H Hwang
IEEE Electron Device Letters 31 (5), 485-487, 2010
Self-Selective Characteristics of Nanoscale Devices for High-Density ReRAM Applications
M Son, X Liu, SM Sadaf, D Lee, S Park, W Lee, S Kim, J Park, J Shin, ...
IEEE electron device letters 33 (5), 718-720, 2012
Effect of Scaling-Based RRAMs on Their Resistive Switching Characteristics
S Kim, KP Biju, M Jo, S Jung, J Park, J Lee, W Lee, J Shin, S Park, ...
IEEE electron device letters 32 (5), 671-673, 2011
Effect of oxygen migration and interface engineering on resistance switching behavior of reactive metal/polycrystalline Pr0.7Ca0.3MnO3 device for nonvolatile …
D Seong, J Park, N Lee, M Hasan, S Jung, H Choi, J Lee, M Jo, W Lee, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
Noise-Analysis-Based Model of Filamentary Switching ReRAM With Stacks
D Lee, J Lee, M Jo, J Park, M Siddik, H Hwang
Electron Device Letters, IEEE, 1-3, 2011
Improved switching uniformity and speed in filament-type RRAM using lightning rod effect
J Park, M Jo, J Lee, S Jung, S Kim, W Lee, J Shin, H Hwang
IEEE electron device letters 32 (1), 63-65, 2010
Resistive switching characteristics of ultra-thin TiOx
J Park, S Jung, J Lee, W Lee, S Kim, J Shin, H Hwang
Microelectronic Engineering, 2011
Quantized conductive filament formed by limited Cu source in sub-5nm era
J Park, W Lee, M Choe, S Jung, M Son, S Kim, S Park, J Shin, D Lee, ...
2011 International Electron Devices Meeting, 3.7. 1-3.7. 4, 2011
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
S Kim, D Lee, J Park, S Jung, W Lee, J Shin, J Woo, G Choi, H Hwang
Nanotechnology 23 (32), 325702, 2012
Nanoscale resistive switching of a copper–carbon-mixed layer for nonvolatile memory applications
H Choi, M Pyun, TW Kim, M Hasan, R Dong, J Lee, JB Park, J Yoon, ...
IEEE electron device letters 30 (3), 302-304, 2009
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