High-mobility BaSnO3 grown by oxide molecular beam epitaxy S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer Apl Materials 4 (1), 2016 | 242 | 2016 |
Symmetry lowering in extreme-electron-density perovskite quantum wells JY Zhang, J Hwang, S Raghavan, S Stemmer Physical review letters 110 (25), 256401, 2013 | 74 | 2013 |
Long-term retention in organic ferroelectric-graphene memories S Raghavan, I Stolichnov, N Setter, JS Heron, M Tosun, A Kis Applied Physics Letters 100 (2), 2012 | 72 | 2012 |
Growth window and effect of substrate symmetry in hybrid molecular beam epitaxy of a Mott insulating rare earth titanate P Moetakef, JY Zhang, S Raghavan, AP Kajdos, S Stemmer Journal of Vacuum Science & Technology A 31 (4), 2013 | 65 | 2013 |
Structure and optical band gaps of (Ba, Sr) SnO3 films grown by molecular beam epitaxy T Schumann, S Raghavan, K Ahadi, H Kim, S Stemmer Journal of Vacuum Science & Technology A 34 (5), 2016 | 64 | 2016 |
Ferroelectric transition in compressively strained SrTiO3 thin films A Verma, S Raghavan, S Stemmer, D Jena Applied Physics Letters 107 (19), 2015 | 63 | 2015 |
Direct Observation of Sr Vacancies in by Quantitative Scanning Transmission Electron Microscopy H Kim, JY Zhang, S Raghavan, S Stemmer Physical Review X 6 (4), 041063, 2016 | 62 | 2016 |
Conduction band edge effective mass of La-doped BaSnO3 S James Allen, S Raghavan, T Schumann, KM Law, S Stemmer Applied Physics Letters 108 (25), 2016 | 60 | 2016 |
Correlation between metal-insulator transitions and structural distortions in high-electron-density SrTiO 3 quantum wells JY Zhang, CA Jackson, R Chen, S Raghavan, P Moetakef, L Balents, ... Physical Review B 89 (7), 075140, 2014 | 58 | 2014 |
Carrier density independent scattering rate in SrTiO3-based electron liquids E Mikheev, S Raghavan, JY Zhang, PB Marshall, AP Kajdos, L Balents, ... Scientific reports 6 (1), 20865, 2016 | 50 | 2016 |
APL Mater. 4, 016106 (2016) S Raghavan, T Schumann, H Kim, JY Zhang, TA Cain, S Stemmer | 44 | |
BaTiO3/SrTiO3 heterostructures for ferroelectric field effect transistors SS Omor F Shoron, Santosh Raghavan, Christopher R Freeze Applied Physics Letters 110 (23), 232902, 2017 | 43 | 2017 |
Probing the Metal-Insulator Transition in by Electrostatic Doping S Raghavan, JY Zhang, OF Shoron, S Stemmer Physical Review Letters 117 (3), 037602, 2016 | 40 | 2016 |
Two-dimensional electron liquid at the (111) SmTiO3/SrTiO3 interface S Raghavan, JY Zhang, S Stemmer Applied Physics Letters 106 (13), 2015 | 33 | 2015 |
Au-gated SrTiO3 field-effect transistors with large electron concentration and current modulation A Verma, S Raghavan, S Stemmer, D Jena Applied Physics Letters 105 (11), 2014 | 32 | 2014 |
Magnetism and local structure in low-dimensional Mott insulating GdTiO 3 JY Zhang, CA Jackson, S Raghavan, J Hwang, S Stemmer Physical Review B 88 (12), 121104, 2013 | 32 | 2013 |
Determination of the Mott-Hubbard gap in GdTiO3 CGVW L. Bjaalie, A. Verma, B. Himmetoglu, A. Janotti, S. Raghavan, V ... PRB 92, 085111, 2015 | 23* | 2015 |
Pseudogaps and Emergence of Coherence in Two-Dimensional Electron Liquids in PB Marshall, E Mikheev, S Raghavan, S Stemmer Physical Review Letters 117 (4), 046402, 2016 | 18 | 2016 |
Subband structure of two-dimensional electron gases in SrTiO3 S Raghavan, S James Allen, S Stemmer Applied Physics Letters 103 (21), 2013 | 16 | 2013 |
Adsorbate-localized states at water-covered (100) SrTiO3 surfaces S Raghavan, A Carvalho, F Le Formal, N Setter, S Öberg, PR Briddon Applied physics letters 98 (1), 2011 | 10 | 2011 |