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Massimo V Fischetti
Massimo V Fischetti
utdallas.edu의 이메일 확인됨
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Band structure, deformation potentials, and carrier mobility in strained Si, Ge, and SiGe alloys
MV Fischetti, SE Laux
Journal of Applied Physics 80 (4), 2234-2252, 1996
18951996
Monte Carlo analysis of electron transport in small semiconductor devices including band-structure and space-charge effects
MV Fischetti, SE Laux
Physical Review B 38 (14), 9721, 1988
13111988
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
10072001
Monte Carlo simulation of transport in technologically significant semiconductors of the diamond and zinc-blende structures. I. Homogeneous transport
MV Fischetti
IEEE transactions on electron devices 38 (3), 634-649, 1991
8221991
Six-band calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness
MV Fischetti, Z Ren, PM Solomon, M Yang, K Rim
Journal of Applied Physics 94 (2), 1079-1095, 2003
6182003
Monte Carlo study of electron transport in silicon inversion layers
MV Fischetti, SE Laux
Physical Review B 48 (4), 2244, 1993
6181993
Silicon CMOS devices beyond scaling
W Haensch, EJ Nowak, RH Dennard, PM Solomon, A Bryant, ...
IBM Journal of Research and Development 50 (4.5), 339-361, 2006
6032006
Monte Carlo simulation of a 30 nm dual-gate MOSFET: How short can Si go?
Laux, Fischetti
1992 International Technical Digest on Electron Devices Meeting, 553-556, 1992
4421992
Charge trapping related threshold voltage instabilities in high permittivity gate dielectric stacks
S Zafar, A Callegari, E Gusev, MV Fischetti
Journal of Applied physics 93 (11), 9298-9303, 2003
3872003
Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity
S Jin, MV Fischetti, T Tang
Journal of Applied Physics 102 (8), 2007
3652007
Quantum effects in the early universe. I. Influence of trace anomalies on homogeneous, isotropic, classical geometries
MV Fischetti, JB Hartle, BL Hu
Physical Review D 20 (8), 1757, 1979
3561979
Theory of high-field electron transport in silicon dioxide
MV Fischetti, DJ DiMaria, SD Brorson, TN Theis, JR Kirtley
Physical Review B 31 (12), 8124, 1985
3471985
Monte Carlo device simulation: full band and beyond
K Hess
Springer Science & Business Media, 2012
3392012
Understanding hot‐electron transport in silicon devices: Is there a shortcut?
MV Fischetti, SE Laux, E Crabbé
Journal of Applied Physics 78 (2), 1058-1087, 1995
2941995
On the enhanced electron mobility in strained-silicon inversion layers
MV Fischetti, F Gamiz, W Hänsch
Journal of applied physics 92 (12), 7320-7324, 2002
2832002
Generation of positive charge in silicon dioxide during avalanche and tunnel electron injection
MV Fischetti
Journal of applied physics 57 (8), 2860-2879, 1985
2301985
Hybrid-orientation technology (HOT): Opportunities and challenges
M Yang, VWC Chan, KK Chan, L Shi, DM Fried, JH Stathis, AI Chou, ...
IEEE Transactions on Electron Devices 53 (5), 965-978, 2006
2212006
Impact ionization in silicon
E Cartier, MV Fischetti, EA Eklund, FR McFeely
Applied Physics Letters 62 (25), 3339-3341, 1993
2031993
Monte Carlo analysis of semiconductor devices: The DAMOCLES program
SE Laux, MV Fischetti, DJ Frank
IBM Journal of Research and Development 34 (4), 466-494, 1990
2031990
Monte Carlo simulation of double-gate silicon-on-insulator inversion layers: The role of volume inversion
F Gamiz, MV Fischetti
Journal of Applied Physics 89 (10), 5478-5487, 2001
2012001
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