| Highly efficient gate-tunable photocurrent generation in vertical heterostructures of layered materials WJ Yu, Y Liu, H Zhou, A Yin, Z Li, Y Huang, X Duan Nature nanotechnology 8 (12), 952-958, 2013 | 1125 | 2013 |
| Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters WJ Yu, Z Li, H Zhou, Y Chen, Y Wang, Y Huang, X Duan Nature materials 12 (3), 246-252, 2013 | 887 | 2013 |
| Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene H Zhou, WJ Yu, L Liu, R Cheng, Y Chen, X Huang, Y Liu, Y Wang, ... Nature communications 4 (1), 2096, 2013 | 614 | 2013 |
| Transferred wrinkled Al2O3 for highly stretchable and transparent graphene–carbon nanotube transistors SH Chae, WJ Yu, JJ Bae, DL Duong, D Perello, HY Jeong, QH Ta, TH Ly, ... Nature materials 12 (5), 403-409, 2013 | 327 | 2013 |
| High-yield chemical vapor deposition growth of high-quality large-area AB-stacked bilayer graphene L Liu, H Zhou, R Cheng, WJ Yu, Y Liu, Y Chen, J Shaw, X Zhong, ... Acs Nano 6 (9), 8241-8249, 2012 | 271 | 2012 |
| Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio QA Vu, YS Shin, YR Kim, VL Nguyen, WT Kang, H Kim, DH Luong, IM Lee, ... Nature communications 7 (1), 12725, 2016 | 249 | 2016 |
| Reduction-controlled viologen in bisolvent as an environmentally stable n-type dopant for carbon nanotubes SM Kim, JH Jang, KK Kim, HK Park, JJ Bae, WJ Yu, IH Lee, G Kim, ... Journal of the American Chemical Society 131 (1), 327-331, 2009 | 213 | 2009 |
| Tuning carrier tunneling in van der Waals heterostructures for ultrahigh detectivity QA Vu, JH Lee, VL Nguyen, YS Shin, SC Lim, K Lee, J Heo, S Park, K Kim, ... Nano letters 17 (1), 453-459, 2017 | 173 | 2017 |
| Toward tunable band gap and tunable dirac point in bilayer graphene with molecular doping WJ Yu, L Liao, SH Chae, YH Lee, X Duan Nano letters 11 (11), 4759-4763, 2011 | 163 | 2011 |
| Small hysteresis nanocarbon-based integrated circuits on flexible and transparent plastic substrate WJ Yu, SY Lee, SH Chae, D Perello, GH Han, M Yun, YH Lee Nano letters 11 (3), 1344-1350, 2011 | 163 | 2011 |
| Highly flexible electronics from scalable vertical thin film transistors Y Liu, H Zhou, R Cheng, W Yu, Y Huang, X Duan Nano letters 14 (3), 1413-1418, 2014 | 148 | 2014 |
| Ultra‐transparent, flexible single‐walled carbon nanotube non‐volatile memory device with an oxygen‐decorated graphene electrode WJ Yu, SH Chae, SY Lee, DL Duong, YH Lee Advanced Materials 23 (16), 1889-1893, 2011 | 141 | 2011 |
| Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers WJ Yu, QA Vu, H Oh, HG Nam, H Zhou, S Cha, JY Kim, A Carvalho, ... Nature communications 7 (1), 13278, 2016 | 130 | 2016 |
| Adaptive logic circuits with doping-free ambipolar carbon nanotube transistors WJ Yu, UJ Kim, BR Kang, IH Lee, EH Lee, YH Lee Nano Letters 9 (4), 1401-1405, 2009 | 125 | 2009 |
| Graphene oxide thin film field effect transistors without reduction M Jin, HK Jeong, WJ Yu, DJ Bae, BR Kang, YH Lee Journal of Physics D: Applied Physics 42 (13), 135109, 2009 | 116 | 2009 |
| Synthesis and systematic characterization of functionalized graphene sheets generated by thermal exfoliation at low temperature M Jin, HK Jeong, TH Kim, KP So, Y Cui, WJ Yu, EJ Ra, YH Lee Journal of Physics D: Applied Physics 43 (27), 275402, 2010 | 114 | 2010 |
| Self-selective van der Waals heterostructures for large scale memory array L Sun, Y Zhang, G Han, G Hwang, J Jiang, B Joo, K Watanabe, ... Nature communications 10 (1), 3161, 2019 | 112 | 2019 |
| A high‐on/off‐ratio floating‐gate memristor array on a flexible substrate via CVD‐grown large‐area 2D layer stacking QA Vu, H Kim, VL Nguyen, UY Won, S Adhikari, K Kim, YH Lee, WJ Yu Advanced Materials 29 (44), 1703363, 2017 | 108 | 2017 |
| Scalable complementary logic gates with chemically doped semiconducting carbon nanotube transistors SY Lee, SW Lee, SM Kim, WJ Yu, YW Jo, YH Lee Acs Nano 5 (3), 2369-2375, 2011 | 106 | 2011 |
| Near-zero hysteresis and near-ideal subthreshold swing in h-BN encapsulated single-layer MoS2 field-effect transistors QA Vu, S Fan, SH Lee, MK Joo, WJ Yu, YH Lee 2D Materials 5 (3), 031001, 2018 | 94 | 2018 |
