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Jong H. Na
Jong H. Na
OSRAM Opto-semiconductors
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High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
JH Na, M Kitamura, Y Arakawa
Applied Physics Letters 93 (6), 063501, 2008
1952008
Hybrid junction light-emitting diodes based on sputtered ZnO and organic semiconductors
JH Na, M Kitamura, M Arita, Y Arakawa
Applied Physics Letters 95 (25), 329, 2009
742009
Organic/inorganic hybrid complementary circuits based on pentacene and amorphous indium gallium zinc oxide transistors
JH Na, M Kitamura, Y Arakawa
Applied Physics Letters 93 (21), 213505, 2008
742008
Quantum-confined Stark effect in a single InGaN quantum dot under a lateral electric field
JW Robinson, JH Rice, KH Lee, JH Na, RA Taylor, DG Hasko, RA Oliver, ...
Applied Physics Letters 86 (21), 213103, 2005
702005
Quantum dot emission from site-controlled micropyramid arrays
PR Edwards, RW Martin, IM Watson, C Liu, RA Taylor, JH Rice, JH Na, ...
Applied Physics Letters 85 (19), 4281-4283, 2004
682004
Threshold voltage control of bottom-contact -channel organic thin-film transistors using modified drain/source electrodes
M Kitamura, Y Kuzumoto, S Aomori, M Kamura, JH Na, Y Arakawa
Applied Physics Letters 94 (8), 65, 2009
672009
Simple analysis method for determining internal quantum efficiency and relative recombination ratios in light emitting diodes
YS Yoo, TM Roh, JH Na, SJ Son, YH Cho
Applied Physics Letters 102 (21), 211107, 2013
522013
Bottom-contact fullerene thin-film transistors with high field-effect mobilities
M Kitamura, S Aomori, JH Na, Y Arakawa
Applied Physics Letters 93 (3), 269, 2008
512008
Registration of single quantum dots using cryogenic laser photolithography
KH Lee, AM Green, RA Taylor, DN Sharp, J Scrimgeour, OM Roche, ...
Applied physics letters 88 (19), 193106, 2006
432006
Dependence of carrier localization in multiple-quantum wells on well thickness
JH Na, RA Taylor, KH Lee, T Wang, A Tahraoui, P Parbrook, AM Fox, ...
Applied physics letters 89 (25), 253120, 2006
392006
Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field
YS Yoo, JH Na, SJ Son, YH Cho
Scientific reports 6 (1), 1-9, 2016
382016
Biexciton and exciton dynamics in single InGaN quantum dots
JH Rice, JW Robinson, JH Na, KH Lee, RA Taylor, DP Williams, ...
Nanotechnology 16 (9), 1477, 2005
342005
Low-voltage-operating organic complementary circuits based on pentacene and C60 transistors
JH Na, M Kitamura, Y Arakawa
Thin Solid Films 517 (6), 2079-2082, 2009
322009
High performance flexible pentacene thin-film transistors fabricated on titanium silicon oxide gate dielectrics
JH Na, M Kitamura, D Lee, Y Arakawa
Applied physics letters 90 (16), 163514, 2007
322007
High performance -channel thin-film transistors with an amorphous phase film on plastic substrate
JH Na, M Kitamura, Y Arakawa
Applied Physics Letters 91 (19), 193501, 2007
302007
Luminescence properties of isolated InGaN/GaN quantum dots
RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, ...
physica status solidi (a) 202 (3), 372-376, 2005
302005
Luminescence properties of isolated InGaN/GaN quantum dots
RW Martin, PR Edwards, RA Taylor, JH Rice, JH Na, JW Robinson, ...
physica status solidi (a) 202 (3), 372-376, 2005
302005
Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy
YS Park, HS Lee, JH Na, HJ Kim, SM Si, HM Kim, TW Kang, JE Oh
Journal of applied physics 94 (1), 800-802, 2003
302003
Time-resolved and time-integrated photoluminescence studies of coupled asymmetric GaN quantum discs embedded in AlGaN barriers
JH Na, RA Taylor, JH Rice, JW Robinson, KH Lee, YS Park, CM Park, ...
Applied Physics Letters 86 (8), 083109, 2005
252005
Complementary two-input NAND gates with low-voltage-operating organic transistors on plastic substrates
JH Na, M Kitamura, Y Arakawa
Applied physics express 1 (2), 021803, 2008
232008
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