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Myoung-Jae Lee
Myoung-Jae Lee
Daegu Gyeongubuk Institute of Science & Technology (DGIST)
Verified email at dgist.ac.kr
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A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5− x/TaO2− x bilayer structures
MJ Lee, CB Lee, D Lee, SR Lee, M Chang, JH Hur, YB Kim, CJ Kim, ...
Nature materials 10 (8), 625-630, 2011
20482011
Reproducible resistance switching in polycrystalline NiO films
S Seo, MJ Lee, DH Seo, EJ Jeoung, DS Suh, YS Joung, IK Yoo, ...
Applied Physics Letters 85 (23), 5655-5657, 2004
11472004
Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
IG Baek, MS Lee, S Seo, MJ Lee, DH Seo, DS Suh, JC Park, SO Park, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 íŽ, 2004
8772004
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
DC Kim, S Seo, SE Ahn, DS Suh, MJ Lee, BH Park, IK Yoo, IG Baek, ...
Applied physics letters 88 (20), 202102, 2006
6372006
Two series oxide resistors applicable to high speed and high density nonvolatile memory
MJ Lee, Y Park, DS Suh, EH Lee, S Seo, DC Kim, R Jung, BS Kang, ...
Advanced Materials 19 (22), 3919-3923, 2007
511*2007
Electrical manipulation of nanofilaments in transition-metal oxides for resistance-based memory
MJ Lee, S Han, SH Jeon, BH Park, BS Kang, SE Ahn, KH Kim, CB Lee, ...
Nano letters 9 (4), 1476-1481, 2009
4582009
Random circuit breaker network model for unipolar resistance switching
SC Chae, JS Lee, S Kim, SB Lee, SH Chang, C Liu, B Kahng, H Shin, ...
Advanced Materials 20 (6), 1154-1159, 2008
3782008
Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
IG Baek, DC Kim, MJ Lee, HJ Kim, EK Yim, MS Lee, JE Lee, SE Ahn, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest íŽ, 2005
3282005
In situ observation of filamentary conducting channels in an asymmetric Ta2O5− x/TaO2− x bilayer structure
GS Park, YB Kim, SY Park, XS Li, S Heo, MJ Lee, M Chang, JH Kwon, ...
Nature communications 4 (1), 1-9, 2013
3172013
Observation of electric-field induced Ni filament channels in polycrystalline film
GS Park, XS Li, DC Kim, RJ Jung, MJ Lee, S Seo
Applied Physics Letters 91 (22), 222103, 2007
2712007
2-stack 1D-1R cross-point structure with oxide diodes as switch elements for high density resistance RAM applications
MJ Lee, Y Park, BS Kang, SE Ahn, C Lee, K Kim, W Xianyu, G Stefanovich, ...
2007 IEEE International Electron Devices Meeting, 771-774, 2007
2662007
Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-type SnS2 and Orthorhombic p-type SnS Crystals
JH Ahn, MJ Lee, H Heo, JH Sung, K Kim, H Hwang, MH Jo
Nano Letters, 2015
2622015
Low‐temperature‐grown transition metal oxide based storage materials and oxide transistors for high‐density non‐volatile memory
MJ Lee, SI Kim, CB Lee, H Yin, SE Ahn, BS Kang, KH Kim, JC Park, ...
Advanced Functional Materials 19 (10), 1587-1593, 2009
2572009
A low‐temperature‐grown oxide diode as a new switch element for high‐density, nonvolatile memories
MJ Lee, S Seo, DC Kim, SE Ahn, DH Seo, IK Yoo, IG Baek, DS Kim, ...
Advanced Materials 19 (1), 73-76, 2007
2572007
Conductivity switching characteristics and reset currents in NiO films
S Seo, MJ Lee, DH Seo, SK Choi, DS Suh, YS Joung, IK Yoo, IS Byun, ...
Applied Physics Letters 86 (9), 093509, 2005
2382005
Improvement of resistive memory switching in NiO using
DC Kim, MJ Lee, SE Ahn, S Seo, JC Park, IK Yoo, IG Baek, HJ Kim, ...
Applied physics letters 88 (23), 232106, 2006
2332006
Effects of metal electrodes on the resistive memory switching property of NiO thin films
CB Lee, BS Kang, A Benayad, MJ Lee, SE Ahn, KH Kim, G Stefanovich, ...
Applied Physics Letters 93 (4), 042115, 2008
2172008
Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications
D Lee, H Choi, H Sim, D Choi, H Hwang, MJ Lee, SA Seo, IK Yoo
IEEE electron device letters 26 (10), 719-721, 2005
2062005
Modeling for bipolar resistive memory switching in transition-metal oxides
JH Hur, MJ Lee, CB Lee, YB Kim, CJ Kim
Physical Review B 82 (15), 155321, 2010
1942010
Write current reduction in transition metal oxide based resistance change memory
SE Ahn, MJ Lee, Y Park, BS Kang, CB Lee, KH Kim, S Seo, DS Suh, ...
Advanced materials 20 (5), 924-928, 2008
1842008
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