Jiyong Woo
Cited by
Cited by
Neuromorphic computing using non-volatile memory
YL Geoffrey W. Burr, Robert M. Shelby, Abu Sebastian, Sangbum Kim, Seyoung ...
ADVANCES IN PHYSICS: X 2 (1), 89-124, 2016
Improved Synaptic Behavior under Identical Pulses using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems
J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang
IEEE Electron Device Letters 37 (8), 994-997, 2016
RRAM-based synapse for neuromorphic system with pattern recognition function
S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ...
2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012
HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications
S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang
IEEE Electron Device Letters 38 (6), 732-735, 2017
High Current Density and Nonlinearity Combination of Selection Device Based on TaOx/TiO2/TaOx Structure for One Selector–One Resistor Arrays
W Lee, J Park, S Kim, J Woo, J Shin, G Choi, S Park, D Lee, E Cha, ...
ACS nano 6 (9), 8166-8172, 2012
TiOx-Based RRAM Synapse With 64-Levels of Conductance and Symmetric Conductance Change by Adopting a Hybrid Pulse Scheme for Neuromorphic …
J Park, M Kwak, K Moon, J Woo, D Lee, H Hwang
IEEE Electron Device Letters 37 (12), 1559-1562, 2016
Threshold selector with high selectivity and steep slope for cross-point memory array
J Song, J Woo, A Prakash, D Lee, H Hwang
IEEE Electron Device Letters 36 (7), 681-683, 2015
Demonstration of Low Power 3-bit Multilevel Cell Characteristics in a TaOx-Based RRAM by Stack Engineering
A Prakash, J Park, J Song, J Woo, EJ Cha, H Hwang
IEEE Electron Device Letters 36 (1), 32-34, 2014
Varistor-type bidirectional switch (JMAX>107A/cm2, selectivity∼104) for 3D bipolar resistive memory arrays
W Lee, J Park, J Shin, J Woo, S Kim, G Choi, S Jung, S Park, D Lee, ...
2012 Symposium on VLSI Technology (VLSIT), 37-38, 2012
Nanoscale (∼10nm) 3D vertical ReRAM and NbO2threshold selector with TiN electrode
E Cha, J Woo, D Lee, S Lee, J Song, Y Koo, J Lee, CG Park, MY Yang, ...
2013 IEEE International Electron Devices Meeting, 10.5. 1-10.5. 4, 2013
Ultrathin (<10nm) Nb2O5/NbO2hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
S Kim, X Liu, J Park, S Jung, W Lee, J Woo, J Shin, G Choi, C Cho, S Park, ...
2012 Symposium on VLSI Technology (VLSIT), 155-156, 2012
RRAM-based synapse devices for neuromorphic systems
K Moon, S Lim, J Park, C Sung, S Oh, J Woo, J Lee, H Hwang
Faraday discussions 213, 421-451, 2019
Comprehensive scaling study of NbO2 insulator-metal-transition selector for cross point array application
E Cha, J Park, J Woo, D Lee, A Prakash, H Hwang
Applied Physics Letters 108 (15), 153502, 2016
Threshold-switching characteristics of a nanothin-NbO2-layer-based Pt/NbO2/Pt stack for use in cross-point-type resistive memories
S Kim, J Park, J Woo, C Cho, W Lee, J Shin, G Choi, S Park, D Lee, ...
Microelectronic Engineering 107, 33-36, 2013
Optimized Programming Scheme Enabling Linear Potentiation in Filamentary HfO2 RRAM Synapse for Neuromorphic Systems
J Woo, K Moon, J Song, M Kwak, J Park, H Hwang
IEEE Transactions on Electron Devices 63 (12), 5064-5067, 2016
Linking Conductive Filament Properties and Evolution to Synaptic Behavior of RRAM Devices for Neuromorphic Applications
J Woo, A Padovani, K Moon, M Kwak, L Larcher, H Hwang
IEEE Electron Device Letters 38 (9), 1220-1223, 2017
Resistive memory-based analog synapse: The pursuit for linear and symmetric weight update
J Woo, S Yu
IEEE Nanotechnology magazine 12 (3), 36-44, 2018
Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics
J Yoo, J Woo, J Song, H Hwang
AIP Advances 5 (12), 127221, 2015
Defect engineering: reduction effect of hydrogen atom impurities in HfO2-based resistive-switching memory devices
S Kim, D Lee, J Park, S Jung, W Lee, J Shin, J Woo, G Choi, H Hwang
Nanotechnology 23 (32), 325702, 2012
Steep Slope Field-Effect Transistors With Ag/TiO2-Based Threshold Switching Device
J Song, J Woo, S Lee, A Prakash, J Yoo, K Moon, H Hwang
IEEE Electron Device Letters 37 (7), 932-934, 2016
The system can't perform the operation now. Try again later.
Articles 1–20