| The origin of deep-level impurity transitions in hexagonal boron nitride XZ Du, J Li, JY Lin, HX Jiang Applied Physics Letters 106 (2), 2015 | 104 | 2015 |
| Optical and electrical properties of Mg-doped AlN nanowires grown by molecular beam epitaxy AT Connie, S Zhao, SM Sadaf, I Shih, Z Mi, X Du, J Lin, H Jiang Applied Physics Letters 106 (21), 2015 | 67 | 2015 |
| Large-scale growth of high-quality hexagonal boron nitride crystals at atmospheric pressure from an Fe–Cr flux S Liu, R He, Z Ye, X Du, J Lin, H Jiang, B Liu, JH Edgar Crystal growth & design 17 (9), 4932-4935, 2017 | 60 | 2017 |
| The origins of near band-edge transitions in hexagonal boron nitride epilayers XZ Du, J Li, JY Lin, HX Jiang Applied Physics Letters 108 (5), 2016 | 56 | 2016 |
| Optical properties of strain-free AlN nanowires grown by molecular beam epitaxy on Si substrates Q Wang, S Zhao, AT Connie, I Shih, Z Mi, T Gonzalez, MP Andrews, ... Applied Physics Letters 104 (22), 2014 | 53 | 2014 |
| Characterization of bulk hexagonal boron nitride single crystals grown by the metal flux technique JH Edgar, TB Hoffman, B Clubine, M Currie, XZ Du, JY Lin, HX Jiang Journal of crystal growth 403, 110-113, 2014 | 51 | 2014 |
| Layer number dependent optical properties of multilayer hexagonal BN epilayers XZ Du, MR Uddin, J Li, JY Lin, HX Jiang Applied Physics Letters 110 (9), 2017 | 29 | 2017 |
| Temperature dependence of the energy bandgap of two-dimensional hexagonal boron nitride probed by excitonic photoluminescence XZ Du, CD Frye, JH Edgar, JY Lin, HX Jiang Journal of Applied Physics 115 (5), 2014 | 23 | 2014 |
| Temperature dependence of the energy bandgap of multi-layer hexagonal boron nitride XZ Du, J Li, JY Lin, HX Jiang Applied Physics Letters 111 (13), 2017 | 13 | 2017 |
| UV light-emitting diodes at 340 nm fabricated on a bulk GaN substrate D Xiao-Zhang, L Hai, C Dun-Jun, X Xiang-Qian, Z Rong, Z You-Dou Chinese Physics Letters 27 (8), 088105, 2010 | 11 | 2010 |
| Synthesis and photoluminescence properties of hexagonal BGaN alloys and quantum wells QW Wang, R Uddin, XZ Du, J Li, JY Lin, HX Jiang Applied Physics Express 12, 011002, 2018 | 6 | 2018 |
| Erbium-doped AlN epilayers synthesized by metal-organic chemical vapor deposition TM Al Tahtamouni, X Du, J Lin, H Jiang Optical Materials Express 5 (3), 648-654, 2015 | 6 | 2015 |
| Temperature dependence of polarized electroluminescence side emission from (0001)-oriented blue and violet InGaN∕ GaN light-emitting diodes X Du, H Lu, P Han, R Zhang, Y Zheng Applied Physics Letters 92 (20), 2008 | 5 | 2008 |
| Erbium-doped a-plane GaN epilayers synthesized by metal-organic chemical vapor deposition TM Al Tahtamouni, X Du, J Li, J Lin, H Jiang Optical Materials Express 5 (2), 274-280, 2015 | 4 | 2015 |
| InGaN/GaN multi-quantum-well planar metal-semiconductor-metal light-emitting diodes C Miao, H Lu, XZ Du, Y Li, R Zhang, YD Zheng Electronics Letters 44 (6), 441-443, 2008 | 3 | 2008 |
| p-Type AlN nanowires and AlN nanowire light emitting diodes on Si S Zhao, AT Connie, BH Le, X Kong, H Guo, XZ Du, JY Lin, HX Jiang, ... 2015 IEEE Summer Topicals Meeting Series (SUM), 131-132, 2015 | 2 | 2015 |
| Optical study on hexagonal boron nitride X Du | | 2018 |
