| Doping selective lateral electrochemical etching of GaN for chemical lift-off J Park, KM Song, SR Jeon, JH Baek, SW Ryu Applied physics letters 94 (22), 2009 | 113 | 2009 |
| Demonstration of nonpolar a-plane InGaN/GaN light emitting diode on r-plane sapphire substrate SM Hwang, YG Seo, KH Baik, IS Cho, JH Baek, S Jung, TG Kim, M Cho Applied Physics Letters 95 (7), 2009 | 103 | 2009 |
| Effect of annealing temperature on optical band-gap of amorphous indium zinc oxide film JW Jeon, DW Jeon, T Sahoo, M Kim, JH Baek, JL Hoffman, NS Kim, ... Journal of Alloys and Compounds 509 (41), 10062-10065, 2011 | 93 | 2011 |
| Room-temperature ferromagnetism of Cu-implanted GaN JH Lee, IH Choi, S Shin, S Lee, J Lee, C Whang, SC Lee, KR Lee, ... Applied physics letters 90 (3), 2007 | 87 | 2007 |
| GaN/In1− xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays CH Lee, J Yoo, YJ Hong, J Cho, YJ Kim, SR Jeon, JH Baek, GC Yi Applied Physics Letters 94 (21), 2009 | 83 | 2009 |
| Transfer of GaN LEDs from sapphire to flexible substrates by laser lift-off and contact printing J Chun, Y Hwang, YS Choi, T Jeong, JH Baek, HC Ko, SJ Park IEEE Photonics Technology Letters 24 (23), 2115-2118, 2012 | 80 | 2012 |
| Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light‐Emitting Diodes by Ag and Ag/SiO2 Nanoparticles LW Jang, DW Jeon, M Kim, JW Jeon, AY Polyakov, JW Ju, SJ Lee, ... Advanced Functional Materials 22 (13), 2728-2734, 2012 | 72 | 2012 |
| Enhanced frequency response associated with negative photoconductance in an InGaAs/InAlAs avalanche photodetector G Kim, IG Kim, JH Baek, OK Kwon Applied physics letters 83 (6), 1249-1251, 2003 | 69 | 2003 |
| Vertically stacked color tunable light-emitting diodes fabricated using wafer bonding and transfer printing J Chun, KJ Lee, YC Leem, WM Kang, T Jeong, JH Baek, HJ Lee, BJ Kim, ... ACS Applied Materials & Interfaces 6 (22), 19482-19487, 2014 | 50 | 2014 |
| Laser lift-off transfer printing of patterned GaN light-emitting diodes from sapphire to flexible substrates using a Cr/Au laser blocking layer J Chun, Y Hwang, YS Choi, JJ Kim, T Jeong, JH Baek, HC Ko, SJ Park Scripta Materialia 77, 13-16, 2014 | 44 | 2014 |
| Synthesis and characterization of porous ZnO nanoparticles by hydrothermal treatment of as pure aqueous precursor T Sahoo, M Kim, JH Baek, SR Jeon, JS Kim, YT Yu, CR Lee, IH Lee Materials Research Bulletin 46 (4), 525-530, 2011 | 42 | 2011 |
| Localized surface plasmon enhanced quantum efficiency of InGaN/GaN quantum wells by Ag/SiO2 nanoparticles LW Jang, DW Jeon, T Sahoo, DS Jo, JW Ju, S Lee, JH Baek, JK Yang, ... Optics Express 20 (3), 2116-2123, 2012 | 40 | 2012 |
| High efficiency GaN light-emitting diodes with two dimensional photonic crystal structures of deep-hole square lattices YC Shin, DH Kim, EH Kim, JM Park, KM Ho, K Constant, JH Choe, ... IEEE journal of quantum electronics 46 (1), 116-120, 2009 | 39 | 2009 |
| Optical properties of InGaAs linear graded buffer layers on GaAs grown by metalorganic chemical vapor deposition B Lee, JH Baek, JH Lee, SW Choi, SD Jung, WS Han, EH Lee Applied physics letters 68 (21), 2973-2975, 1996 | 39 | 1996 |
| High-brightness GaN-based light-emitting diodes on Si using wafer bonding technology SJ Lee, KH Kim, JW Ju, T Jeong, CR Lee, JH Baek Applied physics express 4 (6), 066501, 2011 | 38 | 2011 |
| GaN light-emitting diode with monolithically integrated photonic crystals and angled sidewall deflectors for efficient surface emission J Lee, S Ahn, S Kim, DU Kim, H Jeon, SJ Lee, JH Baek Applied Physics Letters 94 (10), 2009 | 37 | 2009 |
| Pediatrics of Korean medicine KB Kim, DG Kim, YH Kim, JH Kim, SY Min, EJ Park, JH Baek, SA Yu, ... Seoul: Eui Seong Dang Publishing Co, 745-750, 2010 | 36 | 2010 |
| White light generation by resonant nonradiative energy transfer from epitaxial InGaN/GaN quantum wells to colloidal CdSe/ZnS core/shell quantum dots S Nizamoglu, E Sari, JH Baek, IH Lee, HV Demir New Journal of Physics 10 (12), 123001, 2008 | 34 | 2008 |
| Metal-organic chemical vapor deposition growth of InGaN/GaN high power green light emitting diode: Effects of InGaN well protection and electron reservoir layer JW Ju, ES Kang, HS Kim, LW Jang, HK Ahn, JW Jeon, IH Leea, JH Baek Journal of Applied Physics 102 (5), 2007 | 33 | 2007 |
| Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and … LW Jang, DW Jeon, AY Polyakov, AV Govorkov, VN Sokolov, NB Smirnov, ... Journal of alloys and compounds 589, 507-512, 2014 | 30 | 2014 |
In Hwan LeeDepartment of Materials Science & Engineering, Korea Universitykorea.ac.kr의 이메일 확인됨
