| The influence of AlN buffer over the polarity and the nucleation of self-organized GaN nanowires T Auzelle, B Haas, A Minj, C Bougerol, JL Rouvière, A Cros, J Colchero, ... Journal of Applied Physics 117 (24), 2015 | 61 | 2015 |
| Attribution of the 3.45 eV GaN nanowires luminescence to inversion domain boundaries T Auzelle, B Haas, M Den Hertog, JL Rouvière, B Daudin, B Gayral Applied Physics Letters 107 (5), 2015 | 56 | 2015 |
| Lifetime measurements well below the optical diffraction limit S Meuret, LHG Tizei, T Auzelle, R Songmuang, B Daudin, B Gayral, ... ACS photonics 3 (7), 1157-1163, 2016 | 46 | 2016 |
| Assessment of polarity in GaN self-assembled nanowires by electrical force microscopy A Minj, A Cros, N Garro, J Colchero, T Auzelle, B Daudin Nano Letters 15 (10), 6770-6776, 2015 | 46 | 2015 |
| Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires G Nogues, T Auzelle, M Den Hertog, B Gayral, B Daudin Applied Physics Letters 104 (10), 2014 | 37 | 2014 |
| InGaN nanowires with high InN molar fraction: growth, structural and optical properties X Zhang, H Lourenço-Martins, S Meuret, M Kociak, B Haas, JL Rouvière, ... Nanotechnology 27 (19), 195704, 2016 | 32 | 2016 |
| Top-down fabrication of ordered arrays of GaN nanowires by selective area sublimation S Fernández-Garrido, T Auzelle, J Lähnemann, K Wimmer, A Tahraoui, ... Nanoscale Advances 1 (5), 1893-1900, 2019 | 29 | 2019 |
| European Microscopy Congress 2016: Proceedings G Melinte, S Moldovan, D Ihiawakrim, W Baaziz, C Hirlimann, PH Cuong, ... Wiley-VCH Verlag GmbH & Co. KGaA, 2016 | 25 | 2016 |
| Direct assessment of p–n junctions in single GaN nanowires by Kelvin probe force microscopy A Minj, A Cros, T Auzelle, J Pernot, B Daudin Nanotechnology 27 (38), 385202, 2016 | 25 | 2016 |
| Detaching (In, Ga) N nanowire films for devices requiring high flexibility and transmittance Y Zhao, Z Xing, L Geelhaar, J Zhang, W Yang, T Auzelle, Y Wu, L Bian, ... ACS Applied Nano Materials 3 (10), 9943-9950, 2020 | 16 | 2020 |
| Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires J Rodrigues, SMC Miranda, AJS Fernandes, E Nogales, LC Alves, ... physica status solidi c 10 (4), 667-672, 2013 | 16 | 2013 |
| Toward quantitative measurements of piezoelectricity in III-N semiconductor nanowires L Jaloustre, S Le Denmat, T Auzelle, M Azadmand, L Geelhaar, F Dahlem, ... ACS Applied Nano Materials 4 (1), 43-52, 2020 | 14 | 2020 |
| Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires J Rodrigues, MF Leitão, JFC Carreira, NB Sedrine, NF Santos, ... The Journal of Physical Chemistry C 119 (31), 17954-17964, 2015 | 14 | 2015 |
| A polarity-driven nanometric luminescence asymmetry in AlN/GaN heterostructures LHG Tizei, S Meuret, K March, K Hestroffer, T Auzelle, B Daudin, M Kociak Applied Physics Letters 105 (14), 2014 | 14 | 2014 |
| Incorporation of europium into GaN nanowires by ion implantation DN Faye, X Biquard, E Nogales, M Felizardo, M Peres, ... The Journal of Physical Chemistry C 123 (18), 11874-11887, 2019 | 13 | 2019 |
| Interfacial reactions during the molecular beam epitaxy of GaN nanowires on Ti/Al2O3 G Calabrese, G Gao, D Van Treeck, P Corfdir, C Sinito, T Auzelle, ... Nanotechnology 30 (11), 114001, 2019 | 13 | 2019 |
| Monitoring the formation of GaN nanowires in molecular beam epitaxy by polarization-resolved optical reflectometry P Corfdir, G Calabrese, A Laha, T Auzelle, L Geelhaar, O Brandt, ... CrystEngComm 20 (23), 3202-3206, 2018 | 11 | 2018 |
| Electronic properties of air-exposed GaN (11-00) and (0001) surfaces after several device processing compatible cleaning steps T Auzelle, F Ullrich, S Hietzschold, S Brackmann, S Hillebrandt, ... Applied Surface Science 495, 143514, 2019 | 9 | 2019 |
| Correction to “Spectroscopic Analysis of Eu3+ Implanted and Annealed GaN Layers and Nanowires” J Rodrigues, MF Leitão, JFC Carreira, N Ben Sedrine, NF Santos, ... The Journal of Physical Chemistry C 120 (12), 6907-6908, 2016 | 9 | 2016 |
| Absence of quantum-confined stark effect in GaN quantum disks embedded in (Al, Ga) N nanowires grown by molecular beam epitaxy C Sinito, P Corfdir, C Pfüller, G Gao, J Bartolomé, S Kolling, ... Nano Letters 19 (9), 5938-5948, 2019 | 8 | 2019 |
