| Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ... Nature electronics 1 (11), 582-588, 2018 | 346 | 2018 |
| Current-induced magnetization switching in atom-thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance M Wang, W Cai, K Cao, J Zhou, J Wrona, S Peng, H Yang, J Wei, W Kang, ... Nature communications 9 (1), 671, 2018 | 299 | 2018 |
| Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin–orbit torque S Peng, D Zhu, W Li, H Wu, AJ Grutter, DA Gilbert, J Lu, D Xiong, W Cai, ... Nature Electronics 3 (12), 757-764, 2020 | 124 | 2020 |
| Skyrmions in magnetic tunnel junctions X Zhang, W Cai, X Zhang, Z Wang, Z Li, Y Zhang, K Cao, N Lei, W Kang, ... ACS applied materials & interfaces 10 (19), 16887-16892, 2018 | 87 | 2018 |
| Proposal of toggle spin torques magnetic RAM for ultrafast computing Z Wang, H Zhou, M Wang, W Cai, D Zhu, JO Klein, W Zhao IEEE Electron Device Letters 40 (5), 726-729, 2019 | 81 | 2019 |
| Modulation of heavy metal/ferromagnetic metal interface for high‐performance spintronic devices S Peng, D Zhu, J Zhou, B Zhang, A Cao, M Wang, W Cai, K Cao, W Zhao Advanced Electronic Materials 5 (8), 1900134, 2019 | 75 | 2019 |
| Experimental demonstration of skyrmionic magnetic tunnel junction at room temperature S Li, A Du, Y Wang, X Wang, X Zhang, H Cheng, W Cai, S Lu, K Cao, ... Science Bulletin 67 (7), 691-699, 2022 | 70 | 2022 |
| Antiferromagnetic spintronics: An overview and outlook D Xiong, Y Jiang, K Shi, A Du, Y Yao, Z Guo, D Zhu, K Cao, S Peng, ... Fundamental Research 2 (4), 522-534, 2022 | 67 | 2022 |
| Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing X Zhang, W Cai, M Wang, B Pan, K Cao, M Guo, T Zhang, H Cheng, S Li, ... Advanced Science 8 (10), 2004645, 2021 | 45 | 2021 |
| Sub-ns field-free switching in perpendicular magnetic tunnel junctions by the interplay of spin transfer and orbit torques W Cai, K Shi, Y Zhuo, D Zhu, Y Huang, J Yin, K Cao, Z Wang, Z Guo, ... IEEE Electron Device Letters 42 (5), 704-707, 2021 | 42 | 2021 |
| Modulation of field-like spin orbit torque in heavy metal/ferromagnet heterostructures Z Wang, H Cheng, K Shi, Y Liu, J Qiao, D Zhu, W Cai, X Zhang, S Eimer, ... Nanoscale 12 (28), 15246-15251, 2020 | 36 | 2020 |
| Giant Charge-to-Spin Conversion Efficiency in -Based Electron Gas Interface H Yang, B Zhang, X Zhang, X Yan, W Cai, Y Zhao, J Sun, KL Wang, D Zhu, ... Physical Review Applied 12 (3), 034004, 2019 | 31 | 2019 |
| Electrical manipulation and detection of antiferromagnetism in magnetic tunnel junctions A Du, D Zhu, K Cao, Z Zhang, Z Guo, K Shi, D Xiong, R Xiao, W Cai, J Yin, ... Nature Electronics 6 (6), 425-433, 2023 | 30 | 2023 |
| In-memory direct processing based on nanoscale perpendicular magnetic tunnel junctions K Cao, W Cai, Y Liu, H Li, J Wei, H Cui, X He, J Li, C Zhao, W Zhao Nanoscale 10 (45), 21225-21230, 2018 | 25 | 2018 |
| Rectified tunnel magnetoresistance device with high on/off ratio for in-memory computing K Zhang, K Cao, Y Zhang, Z Huang, W Cai, J Wang, J Nan, G Wang, ... IEEE Electron Device Letters 41 (6), 928-931, 2020 | 24 | 2020 |
| Experimental demonstration of NAND-like spin-torque memory unit K Shi, W Cai, Y Zhuo, D Zhu, Y Huang, J Yin, K Cao, Z Wang, Z Guo, ... IEEE Electron Device Letters 42 (4), 513-516, 2021 | 23 | 2021 |
| Ultra-efficient spin–orbit torque induced magnetic switching in W/CoFeB/MgO structures X Zhao, X Zhang, H Yang, W Cai, Y Zhao, Z Wang, W Zhao Nanotechnology 30 (33), 335707, 2019 | 19 | 2019 |
| Demonstration of multi-state memory device combining resistive and magnetic switching behaviors Y Zhang, W Cai, W Kang, J Yang, E Deng, YG Zhang, W Zhao, ... IEEE Electron Device Letters 39 (5), 684-687, 2018 | 19 | 2018 |
| Size dependence of the spin-orbit torque induced magnetic reversal in W/CoFeB/MgO nanostructures L Zhang, X Zhang, M Wang, Z Wang, W Cai, K Cao, D Zhu, H Yang, ... Applied Physics Letters 112 (14), 2018 | 18 | 2018 |
| Heterogeneous memristive devices enabled by magnetic tunnel junction nanopillars surrounded by resistive silicon switches Y Zhang, X Lin, JP Adam, G Agnus, W Kang, W Cai, JR Coudevylle, ... Advanced Electronic Materials 4 (3), 1700461, 2018 | 17 | 2018 |
